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FCB11N60TM

FCB11N60TM
Mfr. #:
FCB11N60TM
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET HIGH POWER
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCB11N60TM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
11 A
Rds On - Drain-Source-Widerstand:
380 mOhms
Vgs - Gate-Source-Spannung:
30 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
SuperFET
Verpackung:
Spule
Höhe:
4.83 mm
Länge:
10.67 mm
Serie:
FCB11N60
Transistortyp:
1 N-Channel
Breite:
9.65 mm
Marke:
ON Semiconductor / Fairchild
Abfallzeit:
56 ns
Produktart:
MOSFET
Anstiegszeit:
98 ns
Werkspackungsmenge:
800
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
119 ns
Typische Einschaltverzögerungszeit:
34 ns
Gewichtseinheit:
0.046296 oz
Tags
FCB11N, FCB11, FCB1, FCB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, D2PAK
*** Source Electronics
MOSFET N-CH 600V 11A D2PAK / Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R
***r Electronics
Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
***ment14 APAC
MOSFET, N CH, 600V, 11A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.32ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Pulse Current Idm:33A
***rchild Semiconductor
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
***ure Electronics
N-Channel 500 V 11 A 380 mOhm 150 W Surface Mount Power Mosfet - D2PAK
***icroelectronics
N-Channel 500V - 0.34 Ohm - 14A Zener-Protected SuperMesh(TM) POWER MOSFET
***et
Trans MOSFET N-CH 500V 14A 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N CH, 500V, 14A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:500V; On Resistance Rds(on):340mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:150W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:14A; Package / Case:D2-PAK; Power Dissipation Pd:150W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:500V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
***icroelectronics
N-Channel 500V - 0.30 Ohm - 12A - D2PAK MDmesh(TM) POWER MOSFET
***ure Electronics
N-Channel 550 V 0.35 Ohm Surface Mount MDmesh™ MosFet - D2PAK
***et
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R
***enic
550V 12A 160W 350m´Î@10V6A 5V@50Ã×A N Channel TO-263-3(D2PAK) MOSFETs ROHS
***ment14 APAC
MOSFET, N-CH, 550V, 12A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Source Voltage Vds:550V; On Resistance
***r Electronics
Power Field-Effect Transistor, 12A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 550V, 12A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 160W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -65°C
***icroelectronics
N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in D2PAK package
***ical
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) D2PAK T/R
***el Electronic
Res Thin Film 1206 20K Ohm 0.1% 0.125W(1/8W) ±25ppm/C Molded SMD Paper T/R
***r Electronics
Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 650V, 12A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.23ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 90W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015)
***(Formerly Allied Electronics)
IRFS9N60APBF N-channel MOSFET Transistor; 9.2 A; 600 V; 3-Pin D2PAK
***ure Electronics
Single N-Channel 600 V 0.75 Ohms Surface Mount Power Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 600V 9.2A 3-Pin(2+Tab) D2PAK
***ure Electronics
IRFS11N50A Series 500 V 7 A 0.52 Ohms Surface Mount Power Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N, 500V, 11A, D2-PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 11A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.52ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Di
***ure Electronics
Single N-Channel 500 V 0.85 Ohms Surface Mount Power Mosfet - D2PAK-3
***ical
Trans MOSFET N-CH 500V 8A 3-Pin(2+Tab) D2PAK T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:8A; On Resistance Rds(On):0.85Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: No
***roFlash
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Teil # Mfg. Beschreibung Aktie Preis
FCB11N60TM
DISTI # V72:2272_06339821		ON SemiconductorSF1 600V 380MOHM E D2PAK775
  • 500:$1.4060
  • 250:$1.5404
  • 100:$1.5565
  • 25:$1.9590
  • 10:$1.9980
  • 1:$2.5863
FCB11N60TM
DISTI # V36:1790_06339821		ON SemiconductorSF1 600V 380MOHM E D2PAK0
  • 800000:$0.9787
  • 400000:$0.9805
  • 80000:$1.0900
  • 8000:$1.2620
  • 800:$1.2900
FCB11N60TM
DISTI # FCB11N60TMCT-ND		ON SemiconductorMOSFET N-CH 600V 11A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		790In Stock
  • 100:$1.8602
  • 10:$2.3140
  • 1:$2.5800
FCB11N60TM
DISTI # FCB11N60TMDKR-ND		ON SemiconductorMOSFET N-CH 600V 11A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		790In Stock
  • 100:$1.8602
  • 10:$2.3140
  • 1:$2.5800
FCB11N60TM
DISTI # FCB11N60TMTR-ND		ON SemiconductorMOSFET N-CH 600V 11A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5600:$1.1022
  • 2400:$1.1446
  • 1600:$1.2294
  • 800:$1.4838
FCB11N60TM
DISTI # 33628371		ON SemiconductorSF1 600V 380MOHM E D2PAK775
  • 6:$2.5863
FCB11N60TM
DISTI # FCB11N60TM		ON SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R - Bulk (Alt: FCB11N60TM)
Min Qty: 261
Container: Bulk		Americas - 0
  • 2610:$1.0900
  • 261:$1.1900
  • 522:$1.1900
  • 783:$1.1900
  • 1305:$1.1900
FCB11N60TM
DISTI # FCB11N60TM		ON SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB11N60TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Europe - 0
  • 8000:€0.9359
  • 4800:€1.0029
  • 3200:€1.0799
  • 1600:€1.1699
  • 800:€1.4039
FCB11N60TM
DISTI # FCB11N60TM		ON SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: FCB11N60TM)
RoHS: Compliant
Min Qty: 800
Container: Reel		Americas - 0
  • 8000:$0.9959
  • 4800:$1.0219
  • 3200:$1.0349
  • 1600:$1.0479
  • 800:$1.0549
FCB11N60TM
DISTI # FCB11N60TM		ON SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R (Alt: FCB11N60TM)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel		Asia - 0
  • 40000:$1.3238
  • 20000:$1.3458
  • 8000:$1.3922
  • 4000:$1.4420
  • 2400:$1.4954
  • 1600:$1.5529
  • 800:$1.6150
FCB11N60TM
DISTI # 31K6744		ON SemiconductorN CHANNEL MOSFET, 600V, 11A, D2-PAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:11A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.32ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V RoHS Compliant: Yes0
  • 9600:$1.1300
  • 2400:$1.1700
  • 800:$1.2800
  • 1:$1.2900
FCB11N60TM
DISTI # 512-FCB11N60TM		ON SemiconductorMOSFET HIGH POWER
RoHS: Compliant		1100
  • 1:$2.3700
  • 10:$2.0100
  • 100:$1.6100
  • 500:$1.4100
  • 800:$1.1700
  • 2400:$1.1600
FCB11N60TMON SemiconductorPower Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
RoHS: Compliant		7
  • 1000:$1.1800
  • 500:$1.2500
  • 100:$1.3000
  • 25:$1.3500
  • 1:$1.4600
FCB11N60TM
DISTI # 6710337P		ON SemiconductorMOSFET N-CHANNEL 600V 11A D2PAK, RL2233
  • 200:£1.5800
  • 100:£1.6300
  • 50:£1.7300
  • 10:£1.9000
FCB11N60TMFairchild Semiconductor CorporationPower Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
RoHS: Compliant		800
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1984
    Menge eingeben:
    Der aktuelle Preis von FCB11N60TM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,37 $
    2,37 $
    10
    2,01 $
    20,10 $
    100
    1,61 $
    161,00 $
    500
    1,41 $
    705,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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