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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| BSF134N10NJ3GXUMA1 DISTI # BSF134N10NJ3GXUMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 100V 9A WDSON-2 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSF134N10NJ3GXUMA1 DISTI # BSF134N10NJ3GXUMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 100V 9A WDSON-2 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSF134N10NJ3GXUMA1 DISTI # BSF134N10NJ3GXUMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 9A WDSON-2 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSF134N10NJ3GXUMA1 DISTI # BSF134N10NJ3GXUMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 9A 7-Pin WDSON-2 T/R - Tape and Reel (Alt: BSF134N10NJ3GXUMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSF134N10NJ3GXUMA1 DISTI # 50Y1817 | Infineon Technologies AG | MOSFET Transistor, N Channel, 40 A, 100 V, 0.0122 ohm, 10 V, 2.7 V RoHS Compliant: Yes | 0 | |
| BSF134N10NJ3G | Infineon Technologies AG | Power Field-Effect Transistor, 9A I(D), 100V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 7476 |
|
| BSF134N10NJ3GXUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 9A I(D), 100V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 33700 |
|
| BSF134N10NJ3 G | Infineon Technologies AG | RoHS: Not Compliant | 5000 |
|
| BSF134N10NJ3GXUMA1536 | Infineon Technologies AG | RoHS: Not Compliant | 15000 |
|
| BSF134N10NJ3 G DISTI # 726-BSF134N10NJ3G | Infineon Technologies AG | MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3 RoHS: Compliant | 4816 |
|
| Bild | Teil # | Beschreibung |
|---|---|---|
|
Mfr.#: BSF134N10NJ3 G OMO.#: OMO-BSF134N10NJ3-G |
MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3 |
|
|
Mfr.#: BSF134N10NJ3GXUMA1 OMO.#: OMO-BSF134N10NJ3GXUMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: BSF134N10NJ3G OMO.#: OMO-BSF134N10NJ3G-1190 |
Power Field-Effect Transistor, 9A I(D), 100V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSF134N10NJ3GXUMA1536 |
Neu und Original |
|
Mfr.#: BSF134N10NJ3GXUMA1 |
MOSFET N-CH 100V 9A WDSON-2 |
|
|
Mfr.#: BSF134N10NJ3 G OMO.#: OMO-BSF134N10NJ3-G-126 |
IGBT Transistors MOSFET N-Ch 100V 40A CanPAK3 SJ OptiMOS 3 |
