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AUIRF2903ZL

AUIRF2903ZL
Mfr. #:
AUIRF2903ZL
Hersteller:
Infineon / IR
Beschreibung:
MOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AUIRF2903ZL Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
235 A
Rds On - Drain-Source-Widerstand:
2.4 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
160 nC
Pd - Verlustleistung:
231 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
9.45 mm
Länge:
10.2 mm
Transistortyp:
1 N-Channel
Breite:
4.5 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001520876
Gewichtseinheit:
0.084199 oz
Tags
AUIRF2903, AUIRF29, AUIRF2, AUIRF, AUIR, AUI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
Automotive Q101 30V Single N-Channel HEXFET Power MOSFET in a TO-262 Package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***ment14 APAC
MOSFET, N CH, 30V, 160A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:231W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012)
Teil # Mfg. Beschreibung Aktie Preis
AUIRF2903ZL
DISTI # AUIRF2903ZL-ND		Infineon Technologies AGMOSFET N-CH 30V 235A TO-262
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    AUIRF2903ZL
    DISTI # 942-AUIRF2903ZL    		Infineon Technologies AGMOSFET AUTO 30V 1 N-CH HEXFET 2.4mOhms
    RoHS: Compliant    		0
      AUIRF2903ZLInternational Rectifier 143
        AUIRF2903ZLInternational RectifierPower Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
        RoHS: Not Compliant        		200
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          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          2500
          Menge eingeben:
          Der aktuelle Preis von AUIRF2903ZL dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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