BSS139H6327XTSA1

Mfr. #:: BSS139H6327XTSA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET N-Ch 250V 30mA SOT-23-3
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: BSS139H6327XTSA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
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ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: PG-SOT-23-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 250 V

Id - Kontinuierlicher Drainstrom:: 100 mA

Rds On - Drain-Source-Widerstand:: 14 Ohms

Vgs th - Gate-Source-Schwellenspannung:: 2.1 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 2.3 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 360 mW

Aufbau:: Single

Kanalmodus:: Erschöpfung

Qualifikation:: AEC-Q101

Verpackung:: Spule

Höhe:: 1.1 mm

Länge:: 2.9 mm

Transistortyp:: 1 N-Channel

Breite:: 1.3 mm

Marke:: Infineon-Technologien

Vorwärtstranskonduktanz - Min:: 60 mS

Abfallzeit:: 182 ns

Produktart:: MOSFET

Anstiegszeit:: 5.4 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 29 ns

Typische Einschaltverzögerungszeit:: 5.8 ns

Teil # Aliase:: BSS139 BSS139H6327XT H6327 SP000702610

Gewichtseinheit:: 0.000212 oz

Tags: BSS139H6327X, BSS139H63, BSS139H, BSS139, BSS13, BSS1, BSS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSS139H6327XTSA1 Beschreibung

***ure Electronics: Single N-Channel 250 V 14 Ohm 2.3 nC SIPMOS® Small Signal Mosfet - SOT-23

***p One Stop Global: Trans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R

***sible Micro: Transistor, FET, N-channel depletion, 250V, 0.1A, SOT23, SMD

***el Electronic: 250V 100mA 360mW 14Ω@10V,100uA 1V@56uA N Channel SOT-23(SOT-23-3) MOSFETs ROHS

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:100Ma; On Resistance Rds(On):7.8Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V Rohs Compliant: Yes

***ineon: Infineon is one of the few semiconductor manufacturers worldwide to offer depletion MOSFETs. | Summary of Features: Depletion mode; dv/dt rated; Available with V GS(th) indicator on the reel; Halogen free; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Onboard charger; Telecom

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 100 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) Ohm = 14 / Gate-Source Voltage V = 20 / Fall Time ns = 182 / Rise Time ns = 5.4 / Turn-OFF Delay Time ns = 29 / Turn-ON Delay Time ns = 5.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 360

***ure Electronics: Single N-Channel 240 V 14 Ohm 2.1 nC SIPMOS® Small Signal Mosfet - SOT-23

***p One Stop: Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23 T/R

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:240V; Continuous Drain Current Id:110Ma; On Resistance Rds(On):7.7Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.4V Rohs Compliant: Yes

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 11 / Drain-Source Voltage (Vds) V = 240 / ON Resistance (Rds(on)) Ohm = 14 / Gate-Source Voltage V = 20 / Fall Time ns = 64.5 / Rise Time ns = 3.1 / Turn-OFF Delay Time ns = 13.7 / Turn-ON Delay Time ns = 3.3 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 360

***emi: P-Channel Enhancement Mode Field Effect Transistor -60V, -0.12A, 10Ω

***Yang: Trans MOSFET P-CH 60V 0.12A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled

***enic: 60V 120mA 360mW 10´Î@10V500mA 3.5V@1mA P Channel SOT-23(SOT-23-3) MOSFETs ROHS

***rchild Semiconductor: This P-Channel enhancement mode field effect transistors is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0610 can be used, with a minimum of effort, in most applications requiring up to 120mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.

***ure Electronics: P-Channel 50 V 10 Ohm 225 mW Surface Mount Power MOSFET - SOT-23

***Yang: Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R - Tape and Reel

***emi: P-Channel MOSFET, Enhancement Mode, -50V, -0.13A, 10Ω

***r Electronics: Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

***rchild Semiconductor: This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.

***trelec: Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -130 / Drain-Source Voltage (Vds) V = -50 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 9.6 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360

***ment14 APAC: MOSFET,P CH,50V,0.13A,SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:130mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-5V; Threshold Voltage Vgs Typ:-1.7V; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:360mW; Power Dissipation Pd:360µW; Power Dissipation Ptot Max:360mW; Pulse Current Idm:520mA; SMD Marking:SP; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-50V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-5V; Voltage Vgs th Max:-2V

***Yang: Transistor: P-MOSFET, unipolar, -50V, -130mA, 10ohm, 300mW, -55+150 deg.C, SMD, SOT23

***ure Electronics: P-Channel 50 V 10 Ohm Surface Mount Enhancement Mode Transistor SOT-23-3

***ical: Trans MOSFET P-CH 50V 0.13A Automotive 3-Pin SOT-23 T/R

***ment14 APAC: MOSFET,P CH,50V,0.13A,SOT23-3; Transistor Polarity:P Channel; Continuous Drain Current Id:130mA; Source Voltage Vds:-50V; On Resistance

***trelec: MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: P Variants: Enhancement mode Power dissipation: 0.2 W

***nell: MOSFET,P CH,50V,0.13A,SOT23-3; Transistor Polarity: P Channel; Continuous Drain Current Id: 130mA; Drain Source Voltage Vds: -50V; On Resistance Rds(on): 10ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -800mV; Power Dissipation Pd: 300mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -130mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Voltage Vgs Max: -20V

***ure Electronics: P-Channel 50 V 0.13 A 300 mW Automotive Enhancement Mode Mosfet - SOT-23

***Yang: Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R - Tape and Reel

***el Electronic: Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3

***ical: Trans MOSFET N-CH 60V 0.115A Automotive 3-Pin SOT-23 T/R

***ark: ; Transistor Type:MOSFET; Transistor Polarity:N Channel; Continuous Drain Current, Id:0.5A; On Resistance, Rds(on):7.5ohm; Package/Case:SOT-23; Termination Type:SMD; Current, Idm pulse:0.8A; Drain-Source Breakdown Voltage:60V ;RoHS Compliant: Yes

***nell: MOSFET, N, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 115mA; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 7.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 330mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Current Id Max: 115mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: 1(G), 2(S),3(D); Pulse Current Idm: 800mA; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V; Voltage Vgs Max: 2.5V; Voltage Vgs Rds on Measurement: 10V; Voltage Vgs th Max: 2.5V; Voltage Vgs th Min: 1V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
BSS139H6327XTSA1 DISTI # V36:1790_06391806	Infineon Technologies AG	Trans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	6000
BSS139H6327XTSA1 DISTI # V72:2272_06391806	Infineon Technologies AG	Trans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	1600	1000:$0.1526 500:$0.1787 250:$0.1804 100:$0.2005 25:$0.3253 10:$0.3615 1:$0.4284
BSS139H6327XTSA1 DISTI # BSS139H6327XTSA1CT-ND	Infineon Technologies AG	MOSFET N-CH 250V 100MA SOT23 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	33436In Stock	1000:$0.1758 500:$0.2275 100:$0.2895 10:$0.3880 1:$0.4500
BSS139H6327XTSA1 DISTI # BSS139H6327XTSA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 250V 100MA SOT23 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	33436In Stock	1000:$0.1758 500:$0.2275 100:$0.2895 10:$0.3880 1:$0.4500
BSS139H6327XTSA1 DISTI # BSS139H6327XTSA1TR-ND	Infineon Technologies AG	MOSFET N-CH 250V 100MA SOT23 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	30000In Stock	75000:$0.1272 30000:$0.1285 15000:$0.1355 6000:$0.1456 3000:$0.1556
BSS139H6327XTSA1 DISTI # 23459133	Infineon Technologies AG	Trans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	45000	3000:$0.0844
BSS139H6327XTSA1 DISTI # 30580364	Infineon Technologies AG	Trans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	4150	67:$0.3787
BSS139H6327XTSA1 DISTI # 32346932	Infineon Technologies AG	Trans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	1600	58:$0.4284
BSS139H6327XTSA1 DISTI # BSS139H6327XTSA1	Infineon Technologies AG	Trans MOSFET N-CH 250V 0.1A 3-Pin SOT-23 T/R - Tape and Reel (Alt: BSS139H6327XTSA1) RoHS: Compliant Min Qty: 6000 Container: Reel	Americas - 0	60000:$0.0969 30000:$0.0979 18000:$0.1019 12000:$0.1059 6000:$0.1099
BSS139H6327XTSA1 DISTI # SP000702610	Infineon Technologies AG	Trans MOSFET N-CH 250V 0.1A 3-Pin SOT-23 T/R (Alt: SP000702610) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.0879 18000:€0.0929 12000:€0.1079 6000:€0.1269 3000:€0.1479
BSS139H6327XTSA1 DISTI # SP000702610	Infineon Technologies AG	Trans MOSFET N-CH 250V 0.1A 3-Pin SOT-23 T/R (Alt: SP000702610) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.0799 18000:€0.0859 12000:€0.1019 6000:€0.1239 3000:€0.1599
BSS139H6327XTSA1 DISTI # 87X8601	Infineon Technologies AG	MOSFET, N CH, 250V, 0.1A, SOT-23-3,Transistor Polarity:N Channel,Continuous Drain Current Id:100mA,Drain Source Voltage Vds:250V,On Resistance Rds(on):7.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.4V,Power RoHS Compliant: Yes	10390	1000:$0.1650 500:$0.1810 250:$0.1970 100:$0.2130 50:$0.2590 25:$0.3040 10:$0.3490 1:$0.4140
BSS139H6327XTSA1. DISTI # 31AC8235	Infineon Technologies AG	Transistor Polarity:N Channel,Continuous Drain Current Id:100mA,Drain Source Voltage Vds:250V,On Resistance Rds(on):7.8ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.4V,Power Dissipation Pd:360mW,No. of Pins:3Pins	0	30000:$0.0970 18000:$0.0980 12000:$0.1020 6000:$0.1060 1:$0.1100
BSS139 H6327 DISTI # 726-BSS139H6327	Infineon Technologies AG	MOSFET N-Ch 250V 30mA SOT-23-3 RoHS: Compliant	21822	1:$0.4100 10:$0.3460 100:$0.2110 1000:$0.1630 3000:$0.1390
BSS139H6327XTSA1 DISTI # 726-BSS139H6327XTSA	Infineon Technologies AG	MOSFET N-Ch 250V 30mA SOT-23-3 RoHS: Compliant	7612	1:$0.4100 10:$0.3460 100:$0.2110 1000:$0.1630 3000:$0.1390
BSS139H6327XT DISTI # 726-BSS139H6327XTSA1	Infineon Technologies AG	MOSFET N-Ch 250V 30mA SOT-23-3 RoHS: Compliant	3251	1:$0.4100 10:$0.3460 100:$0.2110 1000:$0.1630 3000:$0.1390 9000:$0.1300 24000:$0.1230 45000:$0.1200
BSS139H6327XTSA1 DISTI # 3545770P	Infineon Technologies AG	MOSFET N-CHANNEL 250V 0.1A SOT23, RL	6606	320:£0.1400 160:£0.2000 80:£0.2400 40:£0.2600
BSS139H6327XTSA1 DISTI # 3545770	Infineon Technologies AG	MOSFET N-CHANNEL 250V 0.1A SOT23, EA	1196	320:£0.1400 160:£0.2000 80:£0.2400 40:£0.2600 1:£1.9800
BSS139H6327XTSA1 DISTI # BSS139H6327XTSA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,250V,0.1A,0.36W,SOT23	2360	1000:$0.1011 500:$0.1086 100:$0.1250 10:$0.1565 3:$0.2286
BSS139H6327XTSA1 DISTI # BSS139	Infineon Technologies AG	N-Ch 250V 0,04A 0,36W 100R SOT23 RoHS: Compliant	5300	100:€0.1210 500:€0.0910 3000:€0.0810 6000:€0.0775
BSS139H6327XTSA1 DISTI # C1S322000233218	Infineon Technologies AG	Trans MOSFET N-CH 250V 0.1A Automotive 3-Pin SOT-23 T/R RoHS: Compliant	4150	1000:$0.1390 10:$0.3030
BSS139H6327XTSA1 DISTI # XSKDRABV0052202	Infineon Technologies AG	RoHS: Compliant	21005 in Stock0 on Order	21005:$0.1187 6000:$0.1271
BSS139H6327XTSA1 DISTI # 2432718	Infineon Technologies AG	MOSFET, N CH, 250V, 0.1A, SOT-23-3	15481	500:£0.1270 250:£0.1450 100:£0.1640 25:£0.2920 5:£0.3060

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Verfügbarkeit

Aktie:: 631
Auf Bestellung:: 2614
Menge eingeben:

Der aktuelle Preis von BSS139H6327XTSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,41 $~~; ~~0,41 $~~

10: ~~0,35 $~~; ~~3,46 $~~

100: ~~0,21 $~~; ~~21,10 $~~

1000: ~~0,16 $~~; ~~163,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

BSS139H6327X 3
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BSS139H6327XTSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes