SIR770DP-T1-GE3

Mfr. #:: SIR770DP-T1-GE3
Hersteller:: Vishay
Beschreibung:: MOSFET 2N-CH 30V 8A PPAK SO-8
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SIR770DP-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: SIR770DP-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller: VISHAY

Produktkategorie: FETs - Arrays

Serie: GrabenFETR

Verpackung: Band & Spule (TR)

Teil-Aliasnamen: SIR770DP-GE3

Gewichtseinheit: 0.017870 oz

Montageart: SMD/SMT

Paket-Koffer: PowerPAKR SO-8 Dual

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 2 Channel

Lieferanten-Geräte-Paket: PowerPAKR SO-8 Dual

Aufbau: Dual

FET-Typ: 2 N-Channel (Dual)

Leistung max: 17.8W

Transistor-Typ: 2 N-Channel

Drain-zu-Source-Spannung-Vdss: 30V

Eingangskapazität-Ciss-Vds: 900pF @ 15V

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 8A

Rds-On-Max-Id-Vgs: 21 mOhm @ 8A, 10V

Vgs-th-Max-Id: 2.8V @ 250μA

Gate-Lade-Qg-Vgs: 21nC @ 10V

Pd-Verlustleistung: 17.8 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Vgs-Gate-Source-Spannung: +/- 20 V

ID-Dauer-Drain-Strom: 8 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.2 V to 2.8 V

Rds-On-Drain-Source-Widerstand: 17.5 mOhms

Transistor-Polarität: N-Kanal

Qg-Gate-Ladung: 14 nC

Vorwärts-Transkonduktanz-Min: 31 S

Tags: SIR770D, SIR770, SIR77, SIR7, SIR

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIR770DP-T1-GE3 Beschreibung

***ure Electronics: SiR770DP Series 30 V 0.021 Ohm SMT Dual N-Channel MOSFET - PowerPAK SO-8

***et: Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R

***ment14 APAC: MOSFET,NN CH,SC DIO,30V,8A,PPAKS08; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.8V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):17500µohm; Power Dissipation Pd:3.6W

SIR770DP-T1-GE3 Mehr Informationen

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SIR770DP-T1-GE3 DISTI # SIR770DP-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A PPAK SO-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	3000:$0.5236
SIR770DP-T1-GE3 DISTI # SIR770DP-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SIR770DP-T1-GE3 DISTI # SIR770DP-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 8A PPAK SO-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.5778 500:$0.7319 100:$0.9438 10:$1.1940 1:$1.3500
SIR770DP-T1-GE3 DISTI # SIR770DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R (Alt: SIR770DP-T1-GE3) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€1.0309 10:€0.7389 25:€0.5999 50:€0.5299 100:€0.5219 500:€0.5139 1000:€0.5069
SIR770DP-T1-GE3 DISTI # SIR770DP-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 8A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR770DP-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.4939 6000:$0.4799 12000:$0.4599 18000:$0.4469 30000:$0.4349
SIR770DP-T1-GE3 DISTI # 781-SIR770DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	0	1:$1.1900 10:$0.9800 100:$0.7520 500:$0.6470 1000:$0.5670
SIR770DP-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs PowerPAK SO-8 RoHS: Compliant	Americas -

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: SIR770DP-T1-GE3 OMO.#: OMO-SIR770DP-T1-GE3	MOSFET 30V Vds 20V Vgs PowerPAK SO-8
	Mfr.#: SIR770DP OMO.#: OMO-SIR770DP-1190	Neu und Original
	Mfr.#: SIR770DP-T1-E3 OMO.#: OMO-SIR770DP-T1-E3-1190	Neu und Original
	Mfr.#: SIR770DP-T1-GE3 OMO.#: OMO-SIR770DP-T1-GE3-VISHAY	MOSFET 2N-CH 30V 8A PPAK SO-8

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 2000
Menge eingeben:

Der aktuelle Preis von SIR770DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,65 $~~; ~~0,65 $~~

10: ~~0,62 $~~; ~~6,20 $~~

100: ~~0,59 $~~; ~~58,71 $~~

500: ~~0,55 $~~; ~~277,25 $~~

1000: ~~0,52 $~~; ~~521,90 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

SIR770D 3
SIR770 4
SIR77 6
SIR7 37
SIR 693

SIR770DP-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes