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IXFN52N100X

IXFN52N100X
Mfr. #:
IXFN52N100X
Hersteller:
Littelfuse
Beschreibung:
MOSFET 1000V 44A SOT-227 Power MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXFN52N100X Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IXFN52N100X Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-227-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
1000 V
Id - Kontinuierlicher Drainstrom:
44 A
Rds On - Drain-Source-Widerstand:
125 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
245 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
830 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
HiPerFET
Verpackung:
Rohr
Serie:
X-Klasse
Transistortyp:
1 N-Channel
Marke:
IXYS
Vorwärtstranskonduktanz - Min:
23 S
Abfallzeit:
9 ns
Produktart:
MOSFET
Anstiegszeit:
13 ns
Werkspackungsmenge:
10
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
107 ns
Typische Einschaltverzögerungszeit:
34 ns
Tags
IXFN52, IXFN5, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
X-Class 850V - 1000V Power MOSFETs with HiPerFET™
IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Teil # Mfg. Beschreibung Aktie Preis
IXFN52N100X
DISTI # IXFN52N100X-ND		IXYS CorporationMOSFET 1KV 44A ULTRA JCT SOT227
RoHS: Compliant
Min Qty: 1
Container: Tube		10In Stock
  • 100:$31.2840
  • 30:$33.6600
  • 10:$36.6300
  • 1:$39.6000
IXFN52N100X
DISTI # 747-IXFN52N100X		IXYS CorporationMOSFET 1000V 44A SOT-227 Power MOSFET
RoHS: Compliant		24
  • 1:$39.6000
  • 5:$37.6200
  • 10:$36.6300
  • 25:$33.6600
  • 50:$32.2300
  • 100:$31.2900
  • 250:$28.7100
Bild Teil # Beschreibung
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Mfr.#: IXDD614PI

OMO.#: OMO-IXDD614PI

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RC0603FR-071ML

Mfr.#: RC0603FR-071ML

OMO.#: OMO-RC0603FR-071ML

 Thick Film Resistors - SMD 1M OHM 1%
IXDD614PI

Mfr.#: IXDD614PI

OMO.#: OMO-IXDD614PI-IXYS-INTEGRATED-CIRCUITS-DIVIS

 Gate Drivers 14-Ampere Low-Side Ultrafast MOSFET
1285

Mfr.#: 1285

OMO.#: OMO-1285-POMONA-ELECTRONICS

 Terminals TERMINAL .187X.020
MS32 20008

Mfr.#: MS32 20008

OMO.#: OMO-MS32-20008-AMETHERM

 Inrush Current Limiters 32mm 20ohms 8A INRSH CURR LIMITER
RC0603FR-071ML

Mfr.#: RC0603FR-071ML

OMO.#: OMO-RC0603FR-071ML-YAGEO

 Thick Film Resistors - SMD 1M OHM 1%
Verfügbarkeit
Aktie:
24
Auf Bestellung:
2007
Menge eingeben:
Der aktuelle Preis von IXFN52N100X dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
39,60 $
39,60 $
5
37,62 $
188,10 $
10
36,63 $
366,30 $
25
33,66 $
841,50 $
50
32,23 $
1 611,50 $
100
31,29 $
3 129,00 $
250
28,71 $
7 177,50 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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