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SI2333DDS-T1-GE3

SI2333DDS-T1-GE3
Mfr. #:
SI2333DDS-T1-GE3
Hersteller:
Vishay
Beschreibung:
MOSFET P-CH 12V 6A SOT23
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SI2333DDS-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SI2333DDS-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Vishay Siliconix
Produktkategorie
IC-Chips
Serie
GrabenFETR
Verpackung
Digi-ReelR Alternative Verpackung
Gewichtseinheit
0.050717 oz
Montageart
SMD/SMT
Handelsname
P-Kanal Gen III
Paket-Koffer
TO-236-3, SC-59, SOT-23-3
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
SOT-23-3 (TO-236)
Aufbau
Single
FET-Typ
MOSFET P-Kanal, Metalloxid
Leistung max
1.7W
Transistor-Typ
1 P-Channel
Drain-zu-Source-Spannung-Vdss
12V
Eingangskapazität-Ciss-Vds
1275pF @ 6V
FET-Funktion
Standard
Strom-Dauer-Drain-Id-25°C
6A (Tc)
Rds-On-Max-Id-Vgs
28 mOhm @ 5A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Gate-Lade-Qg-Vgs
35nC @ 8V
Pd-Verlustleistung
1.7 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
20 ns
Anstiegszeit
24 ns
Vgs-Gate-Source-Spannung
8 V
ID-Dauer-Drain-Strom
- 6 A
Vds-Drain-Source-Breakdown-Voltage
- 12 V
Rds-On-Drain-Source-Widerstand
28 mOhms
Transistor-Polarität
P-Kanal
Typische-Ausschaltverzögerungszeit
26 ns
Typische-Einschaltverzögerungszeit
45 ns
Qg-Gate-Ladung
9 nC
Vorwärts-Transkonduktanz-Min
18 S
Tags
SI2333DDS-T, SI2333DD, SI2333D, SI2333, SI233, SI23, SI2
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SI2333DDS-T1-GE3 P-channel MOSFET Transistor; 6 A; 12 V; 3-Pin SOT-23
***Components
On a Reel of 3000, P-Channel MOSFET, 6 A, 12 V, 3-Pin SOT-23 Vishay SI2333DDS-T1-GE3
***ure Electronics
Single P-Channel 12 V 0.028 O 35 nC Surface Mount Power Mosfet - SOT-23
***et Europe
Trans MOSFET P-CH 12V 5A 3-Pin TO-236 T/R
***i-Key
MOSFET P-CH 12V 6A SOT23
***ponent Sense
TR MOS P 28MR 4.5V -6A SOT23 SMD R-TRANS
***ical
Trans MOSFET P-CH 12V 5A
***et
P-CHANNEL 12-V (D-S) MOSFET
***ronik
P-CH 12V 6A 28mOhm SOT23
***ment14 APAC
MOSFET, P-CH, 12V, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-6A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.023ohm; Rds(on) Test Voltage Vgs:-4.5V; Power Dissipation Pd:1.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-23; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to +150°C
SI2 Series TrenchFET® Power MOSFETs
Vishay SI2 Series TrenchFET® Power MOSFETs are N-channel MOSFETs designed with 30V V(ds) and are 100% tested gate resistance(Rg). These MOSFETs have gate resistance tested for 1MHz frequency with 0.2Ω to 1.4Ω. These SI2 series MOSFETs operate from -55ºC to 150ºC junction and storage temperature. The SI2 series are ideal for DC/DC converter, Load switch, and power management.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET® P-Channel MOSFETs
Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.
Teil # Mfg. Beschreibung Aktie Preis
SI2333DDS-T1-GE3
DISTI # SI2333DDS-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CH 12V 6A SOT23
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.1543
SI2333DDS-T1-GE3
DISTI # SI2333DDS-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CH 12V 6A SOT23
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.1743
  • 500:$0.2256
  • 100:$0.3076
  • 10:$0.4100
  • 1:$0.4900
SI2333DDS-T1-GE3
DISTI # SI2333DDS-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CH 12V 6A SOT23
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.1743
  • 500:$0.2256
  • 100:$0.3076
  • 10:$0.4100
  • 1:$0.4900
SI2333DDS-T1-GE3
DISTI # SI2333DDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5A 3-Pin TO-236 T/R (Alt: SI2333DDS-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 15000
  • 3000:$1.7300
  • 6000:$1.1931
  • 9000:$0.8872
  • 15000:$0.7208
  • 30000:$0.6528
  • 75000:$0.6291
  • 150000:$0.6070
SI2333DDS-T1-GE3
DISTI # SI2333DDS-T1-GE3		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5A 3-Pin TO-236 T/R - Tape and Reel (Alt: SI2333DDS-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.1309
  • 6000:$0.1269
  • 12000:$0.1219
  • 18000:$0.1189
  • 30000:$0.1159
SI2333DDS-T1-GE3
DISTI # 05AC7746		Vishay IntertechnologiesTrans MOSFET P-CH 12V 5A 3-Pin TO-236 T/R - Product that comes on tape, but is not reeled (Alt: 05AC7746)
RoHS: Not Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$0.5160
  • 25:$0.3920
  • 50:$0.3420
  • 100:$0.2920
  • 250:$0.2660
  • 500:$0.2400
  • 1000:$0.1850
SI2333DDS-T1-GE3
DISTI # 05AC7746		Vishay IntertechnologiesMOSFET, P-CH, -12V, -6A, SOT-23-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-6A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.023ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:1V,MSL:- , RoHS Compliant: Yes75
  • 1:$0.5160
  • 25:$0.3920
  • 50:$0.3420
  • 100:$0.2920
  • 250:$0.2660
  • 500:$0.2400
  • 1000:$0.1850
SI2333DDS-T1-GE3
DISTI # 67X6847		Vishay IntertechnologiesP-CHANNEL 12-V (D-S) MOSFET0
  • 1:$0.1330
  • 3000:$0.1320
  • 6000:$0.1250
SI2333DDS-T1-GE3
DISTI # 70459509		Vishay SiliconixSI2333DDS-T1-GE3 P-channel MOSFET Transistor,6 A,12 V,3-Pin SOT-23
RoHS: Compliant		0
  • 3000:$0.2360
  • 6000:$0.2030
  • 12000:$0.1870
SI2333DDS-T1-GE3
DISTI # 78-SI2333DDS-T1-GE3		Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs SOT-23
RoHS: Compliant		1105
  • 1:$0.4300
  • 10:$0.3270
  • 100:$0.2430
  • 500:$0.2000
  • 1000:$0.1540
  • 3000:$0.1410
  • 6000:$0.1320
  • 9000:$0.1230
  • 24000:$0.1160
SI2333DDS-T1-GE3Vishay IntertechnologiesSingle P-Channel 12 V 0.028 O 35 nC Surface Mount Power Mosfet - SOT-23
RoHS: Compliant		33000Reel
  • 3000:$0.2000
SI2333DDS-T1-GE3Vishay Siliconix 2
    SI2333DDS-T1-GE3
    DISTI # 7879222    		Vishay IntertechnologiesMOSFET P-CH 12V 5A TRENCHFET SOT23, PK1120
    • 10:£0.2330
    • 30:£0.1500
    • 150:£0.1450
    • 750:£0.1390
    • 1500:£0.1280
    SI2333DDS-T1-GE3
    DISTI # 9194220    		Vishay IntertechnologiesMOSFET P-CH 12V 5A TRENCHFET SOT23, RL3000
    • 3000:£0.1120
    • 9000:£0.1100
    SI2333DDS-T1-GE3Vishay SemiconductorsSMALL SIGNAL FIELD-EFFECT TRANSISTOR, 6A I(D), 12V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-236AB1
    • 1:$0.9000
    SI2333DDS-T1-GE3
    DISTI # TMOSS6695    		Vishay IntertechnologiesP-CH 12V 6A 28mOhm SOT23
    RoHS: Compliant    		Stock DE - 0Stock US - 0
    • 3000:$0.1461
    SI2333DDS-T1-GE3Vishay IntertechnologiesMOSFET -12V Vds 8V Vgs SOT-23
    RoHS: Compliant    		Americas - 6000
      SI2333DDS-T1-GE3
      DISTI # 2283650      		Vishay IntertechnologiesMOSFET, P-CH, 12V, SOT23
      RoHS: Compliant      		0
      • 5:£0.2380
      • 25:£0.1530
      • 100:£0.1480
      • 250:£0.1450
      • 500:£0.1420
      SI2333DDS-T1-GE3
      DISTI # 2283650      		Vishay IntertechnologiesMOSFET, P-CH, 12V, SOT23
      RoHS: Compliant      		0
      • 1:$0.6810
      • 10:$0.5180
      • 100:$0.3850
      • 500:$0.3170
      • 1000:$0.2440
      • 3000:$0.2230
      • 6000:$0.2090
      • 9000:$0.1950
      Bild Teil # Beschreibung
      SI2333DDS-T1-GE3

      Mfr.#: SI2333DDS-T1-GE3

      OMO.#: OMO-SI2333DDS-T1-GE3

      		 MOSFET -12V Vds 8V Vgs SOT-23
      SI2333DDS

      Mfr.#: SI2333DDS

      OMO.#: OMO-SI2333DDS-1190

      		 Neu und Original
      SI2333DDS-T1

      Mfr.#: SI2333DDS-T1

      OMO.#: OMO-SI2333DDS-T1-1190

      		 Neu und Original
      SI2333DDS-T1-E3

      Mfr.#: SI2333DDS-T1-E3

      OMO.#: OMO-SI2333DDS-T1-E3-1190

      		 Neu und Original
      SI2333DDS-T1-GE3

      Mfr.#: SI2333DDS-T1-GE3

      OMO.#: OMO-SI2333DDS-T1-GE3-VISHAY

      		 MOSFET P-CH 12V 6A SOT23
      SI2333DDS-T1-GE3-CUT TAPE

      Mfr.#: SI2333DDS-T1-GE3-CUT TAPE

      OMO.#: OMO-SI2333DDS-T1-GE3-CUT-TAPE-1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von SI2333DDS-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      0,17 $
      0,17 $
      10
      0,17 $
      1,65 $
      100
      0,16 $
      15,66 $
      500
      0,15 $
      73,95 $
      1000
      0,14 $
      139,20 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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