BUL642D2G

BUL642D2G
Mfr. #:
BUL642D2G
Hersteller:
ON Semiconductor
Beschreibung:
Bipolar Transistors - BJT BIP NPN 3A 825V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BUL642D2G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
BUL642D2G DatasheetBUL642D2G Datasheet (P4-P6)BUL642D2G Datasheet (P7-P8)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
Bipolartransistoren - BJT
RoHS:
Y
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Polarität des Transistors:
NPN
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
440 V
Kollektor- Basisspannung VCBO:
825 V
Emitter- Basisspannung VEBO:
11 V
Kollektor-Emitter-Sättigungsspannung:
1.5 V
Maximaler DC-Kollektorstrom:
11 A
Bandbreitenprodukt fT gewinnen:
13 MHz
Minimale Betriebstemperatur:
- 65 C
Maximale Betriebstemperatur:
+ 150 C
Höhe:
9.28 mm (Max)
Länge:
10.28 mm (Max)
Breite:
4.82 mm (Max)
Marke:
ON Semiconductor
Kontinuierlicher Kollektorstrom:
3 A
DC-Kollektor/Basisverstärkung hfe Min:
16
Pd - Verlustleistung:
75 W
Produktart:
BJTs - Bipolartransistoren
Werkspackungsmenge:
1
Unterkategorie:
Transistoren
Gewichtseinheit:
0.211644 oz
Tags
BUL6, BUL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***r Electronics
Power Bipolar Transistor, 3A I(C), 440V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***ponent Stockers USA
3 A 440 V NPN Si POWER TRANSISTOR TO-220AB
***el Electronic
POWER BIPOLAR TRANSISTOR, NPN
***i-Key
TRANS NPN 440V 3A TO-220AB
***emi
Power 3A 825V NPN
***ure Electronics
FJPF Series NPN 40 W 500 V 5 A Flange Mount Power Transistor - TO-220F
***ical
Trans GP BJT NPN 500V 5A 40000mW 3-Pin(3+Tab) TO-220FP Rail
***r Electronics
Power Bipolar Transistor, 5A I(C), 500V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***enic
10Ã×A 500V 40W 5A 20@600mA5V 15MHz NPN 1V@3A600mA +150¡Í@(Tj) TO-220F Bipolar Transistors - BJT ROHS
***nell
TRANSISTOR, NPN, 500V, 5A, TO-220F-3; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 500V; Transition Frequency ft: 15MHz; Power Dissipation Pd: 40W; DC Collector Current: 5A; DC Current Gain hFE: 20hFE; Transis
***ark
TRANS, NPN, 500V, 5A, 150DEG C, 40W; Transistor Polarity:NPN; Collector Emitter Voltage Max:500V; Continuous Collector Current:5A; Power Dissipation:40W; Transistor Mounting:Through Hole; No. of Pins:3Pins; Transition Frequency:15MHzRoHS Compliant: Yes
***ure Electronics
FJP Series NPN 70 W 400 V 4 A Fast Switching Transistor - TO-220-3
***r Electronics
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
***et
Trans GP BJT NPN 400V 4A 3-Pin(3+Tab) TO-220AB Rail
***inecomponents.com
NPN Triple Diffused Planar Silicon Transistor
***Yang
TRANS NPN 500V 5A TO220F-3
***el Electronic
IC REG LIN 2.5V 500MA 8HTSOP-J
***Yang
Bipolar (BJT) Transistor NPN 500V 5A 14MHz 100W Through Hole TO-220-3 - Bulk
***i-Key Marketplace
TRANS NPN 500V 5A TO220-3
***ure Electronics
PHE Series NPN 75 W 400 V 4 A Flange Mount Power Transistor - TO-220-3
***ical
Trans GP BJT NPN 400V 4A 3-Pin(3+Tab) TO-220AB Tube
***Parts
Transistor NPN, TO-220AB 400V 4AThrough Hole
***ponent Stockers USA
4 A 400 V NPN Si POWER TRANSISTOR TO-220AB
***et
Bipolar (BJT) Transistor NPN 400V 4A 4MHz 75W Through Hole TO-220-3
***i-Key Marketplace
TRANS NPN 400V 4A TO220-3
Teil # Mfg. Beschreibung Aktie Preis
BUL642D2G
DISTI # BUL642D2G-ND
ON SemiconductorTRANS NPN 440V 3A TO-220AB
RoHS: Compliant
Min Qty: 300
Container: Tube
Limited Supply - Call
    BUL642D2G
    DISTI # 863-BUL642D2G
    ON SemiconductorBipolar Transistors - BJT BIP NPN 3A 825V
    RoHS: Compliant
    0
      BUL642D2GON SemiconductorPower Bipolar Transistor, 3A I(C), 440V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
      RoHS: Compliant
      1350
      • 1000:$0.6600
      • 500:$0.6900
      • 100:$0.7200
      • 25:$0.7500
      • 1:$0.8100
      Bild Teil # Beschreibung
      BUL654

      Mfr.#: BUL654

      OMO.#: OMO-BUL654

      Bipolar Transistors - BJT HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR
      BUL642D2G

      Mfr.#: BUL642D2G

      OMO.#: OMO-BUL642D2G-ON-SEMICONDUCTOR

      TRANS NPN 440V 3A TO-220AB
      BUL67

      Mfr.#: BUL67

      OMO.#: OMO-BUL67-1190

      Neu und Original
      BUL6802

      Mfr.#: BUL6802

      OMO.#: OMO-BUL6802-1190

      Neu und Original
      BUL6803L

      Mfr.#: BUL6803L

      OMO.#: OMO-BUL6803L-1190

      Neu und Original
      BUL6817

      Mfr.#: BUL6817

      OMO.#: OMO-BUL6817-1190

      Neu und Original
      BUL6822H-E

      Mfr.#: BUL6822H-E

      OMO.#: OMO-BUL6822H-E-1190

      Neu und Original
      BUL6823AL

      Mfr.#: BUL6823AL

      OMO.#: OMO-BUL6823AL-1190

      Neu und Original
      BUL68H5

      Mfr.#: BUL68H5

      OMO.#: OMO-BUL68H5-1190

      Neu und Original
      BUL654

      Mfr.#: BUL654

      OMO.#: OMO-BUL654-STMICROELECTRONICS

      Bipolar Transistors - BJT IGBT & Power Bipola
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von BUL642D2G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Beginnen mit
      Top