AS6C4008-55BIN

AS6C4008-55BIN
Mfr. #:
AS6C4008-55BIN
Hersteller:
Alliance Memory
Beschreibung:
SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
AS6C4008-55BIN Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
AS6C4008-55BIN Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Alliance Memory, Inc.
Produktkategorie
Erinnerung
Serie
-
Verpackung
Tray Alternative Verpackung
Paket-Koffer
36-TFBGA
Betriebstemperatur
-40°C ~ 85°C (TA)
Schnittstelle
Parallel
Spannungsversorgung
2.7 V ~ 5.5 V
Lieferanten-Geräte-Paket
36-TFBGA (6x8)
Speichergröße
4M (512K x 8)
Speichertyp
SRAM - Asynchron
Geschwindigkeit
55ns
Format-Speicher
RAM
Tags
AS6C4008-5, AS6C400, AS6C4, AS6C, AS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
SRAM Chip Async Single 3V 4M-bit 512K x 8 55ns 36-Pin TFBGA Tray
***metry Electronics
Low Power CMOS SRAM 4MB 48ball TFBGA 2.7-5V 512k x 8
***nell
SRAM, 4MB, 512KX8, 3-5V, 48BGA
***ment14 APAC
SRAM, 4MB, 512KX8, 3-5V, 48BGA; Memory Size:4Mbit; Memory Configuration:512K x 8; Supply Voltage Min:2.7V; Supply Voltage Max:5.5V; Memory Case Style:TFBGA; No. of Pins:36; Access Time:55ns; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; Operating Temperature Range:-40°C to +85°C; Supply Voltage Range:2.7V to 5.5V
Low Power CMOS SRAM
Alliance Memory Low Power Asynchronous Static Random Access Memory (SRAM) devices are fabricated using high-performance, high-reliability CMOS technology. Alliance Memory CMOS SRAM devices are designed for low-power applications and are particularly well-suited for battery backup nonvolatile memory applications. AS6C8008 is a 8,388,608-bit device organized as 1,048,576 words by 8-bits. AS6C1616 is a 16,777,216-bit device organized as 1,048,576 words by 16-bits. AS6C6264A is a 65,536-bit device organized as 8,192 words by 8 bits. AS6C62256 is a 262,144-bit device organized as 32,768 words by 8-bits. Available in different packages/cases.
Teil # Mfg. Beschreibung Aktie Preis
AS6C4008-55BIN
DISTI # 1450-1177-ND
Alliance Memory IncIC SRAM 4M PARALLEL 36TFBGA
RoHS: Compliant
Min Qty: 480
Container: Tray
Temporarily Out of Stock
  • 1440:$3.3117
  • 960:$3.3682
  • 480:$3.6165
AS6C4008-55BINTR
DISTI # AS6C4008-55BINTR-ND
Alliance Memory IncIC SRAM 4M PARALLEL 36TFBGA
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2000:$3.3541
AS6C4008-55BIN
DISTI # AS6C4008-55BIN
Alliance Memory IncSRAM Chip Async Single 3V 4M-Bit 512K x 8 55ns 36-Pin TF-BGA - Trays (Alt: AS6C4008-55BIN)
RoHS: Compliant
Min Qty: 480
Container: Tray
Americas - 0
  • 480:$3.2900
  • 960:$3.2900
  • 1920:$3.1900
  • 2880:$3.1900
  • 4800:$3.0900
AS6C4008-55BIN
DISTI # AS6C4008-55BIN
Alliance Memory IncSRAM Chip Async Single 3V 4M-Bit 512K x 8 55ns 36-Pin TF-BGA (Alt: AS6C4008-55BIN)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€3.4900
  • 10:€3.1900
  • 25:€2.9900
  • 50:€2.8900
  • 100:€2.7900
  • 500:€2.6900
  • 1000:€2.4900
AS6C4008-55BINTR
DISTI # AS6C4008-55BINTR
Alliance Memory IncSRAM Chip Async Single 3V 4M-Bit 512K x 8 55ns 36-Pin TF-BGA - Tape and Reel (Alt: AS6C4008-55BINTR)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 0
  • 2000:$2.7900
  • 4000:$2.7900
  • 8000:$2.5900
  • 12000:$2.4900
  • 20000:$2.4900
AS6C4008-55BINTR
DISTI # AS6C4008-55BINTR
Alliance Memory IncSRAM Chip Async Single 3V 4M-Bit 512K x 8 55ns 36-Pin TF-BGA (Alt: AS6C4008-55BINTR)
RoHS: Compliant
Min Qty: 2000
Europe - 0
  • 2000:€3.2900
  • 4000:€3.0900
  • 8000:€2.9900
  • 12000:€2.7900
  • 20000:€2.5900
AS6C4008-55BIN
DISTI # 913-AS6C4008-55BIN
Alliance Memory IncSRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
RoHS: Compliant
8
  • 1:$4.9100
  • 10:$4.4500
  • 25:$4.3600
  • 50:$4.3300
  • 100:$3.8900
  • 250:$3.8700
  • 500:$3.7300
  • 1000:$3.3800
  • 2000:$3.2200
AS6C4008-55BINTR
DISTI # 913-AS6C4008-55BINTR
Alliance Memory IncSRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
RoHS: Compliant
0
  • 1:$4.9200
  • 10:$4.4600
  • 25:$4.3700
  • 50:$4.3400
  • 100:$3.9000
  • 250:$3.8800
  • 500:$3.7400
  • 1000:$3.3900
  • 2000:$3.2300
AS6C4008-55BINAlliance Memory IncSRAM 4M2.7-5.5V55ns 512K x 8 Asynch SRAM480
    AS6C4008-55BINTRAlliance Memory IncSRAM 4M2.7-5.5V55ns 512K x 8 Asynch SRAM2000
      Bild Teil # Beschreibung
      AS6C4008-55PCN

      Mfr.#: AS6C4008-55PCN

      OMO.#: OMO-AS6C4008-55PCN

      SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
      AS6C4008-55TIN

      Mfr.#: AS6C4008-55TIN

      OMO.#: OMO-AS6C4008-55TIN

      SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
      AS6C4008A-55BINTR

      Mfr.#: AS6C4008A-55BINTR

      OMO.#: OMO-AS6C4008A-55BINTR

      SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
      AS6C4008-55STINR

      Mfr.#: AS6C4008-55STINR

      OMO.#: OMO-AS6C4008-55STINR

      SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
      AS6C4008-55SIN-TR

      Mfr.#: AS6C4008-55SIN-TR

      OMO.#: OMO-AS6C4008-55SIN-TR-1190

      Neu und Original
      AS6C4008A-55BINTR

      Mfr.#: AS6C4008A-55BINTR

      OMO.#: OMO-AS6C4008A-55BINTR-ALLIANCE-MEMORY

      SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
      AS6C4008-55STINR

      Mfr.#: AS6C4008-55STINR

      OMO.#: OMO-AS6C4008-55STINR-ALLIANCE-MEMORY

      SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
      AS6C4008A-55TIN

      Mfr.#: AS6C4008A-55TIN

      OMO.#: OMO-AS6C4008A-55TIN-ALLIANCE-MEMORY

      SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
      AS6C4008-55TIN

      Mfr.#: AS6C4008-55TIN

      OMO.#: OMO-AS6C4008-55TIN-ALLIANCE-MEMORY

      SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
      AS6C4008-55PIN

      Mfr.#: AS6C4008-55PIN

      OMO.#: OMO-AS6C4008-55PIN-ALLIANCE-MEMORY

      SRAM 4M, 2.7-5.5V, 55ns 512K x 8 Asynch SRAM
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von AS6C4008-55BIN dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      4,24 $
      4,24 $
      10
      4,03 $
      40,32 $
      100
      3,82 $
      381,99 $
      500
      3,61 $
      1 803,85 $
      1000
      3,40 $
      3 395,50 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
      Beginnen mit
      Neueste Produkte
      • TMC 8 Series UL 489 Thermal-Magnetic Circuit Break
        Phoenix Contact's TMC 8 series is comprised of 1-pole, 2-pole, and 3-pole thermal-magnetic miniature circuit breakers (MCBs) in accordance with UL 489 and EN 60947-2 for DIN rail-mounted appli
      • Compare AS6C4008-55BIN
        AS6C400855BIN vs AS6C400855BINTR vs AS6C400855PCN
      • SAMA5D2 Family of MPUs and Eval Board
        Microchip’s SAMA5D2 Xplained Ultra is a fast prototyping and evaluation platform for the Atmel SMART SAMA5D2 series Arm® Cortex®-A5 processor based microprocessors.
      • PAN1026A Comprehensive Embedded Dual Mode Bluetoot
        Panasonic offers the PAN1026A comprehensive embedded dual mode Bluetooth® 4.2 RF module for electronic logging devices, gaming, and industrial applications.
      • NCP1244/46
        Featuring Dynamic Self-Supply the NCP1244 and NCP1246 are new fixed-frequency current-mode controllers from ON Semiconductor.
      • N-Channel SuperFET® II MOSFET
        Tailored to minimize conduction loss, provide superior switching performance and suitable for various AC / DC power conversions from On Semiconductor.
      Top