RQ6C065BCTCR

RQ6C065BCTCR
Mfr. #:
RQ6C065BCTCR
Hersteller:
Rohm Semiconductor
Beschreibung:
MOSFET Pch -20V -6.5A Si MOSFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RQ6C065BCTCR Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
RQ6C065BCTCR Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
ROHM Halbleiter
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
SOT-457-6
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
P-Kanal
Vds - Drain-Source-Durchbruchspannung:
20 V
Id - Kontinuierlicher Drainstrom:
6.5 A
Rds On - Drain-Source-Widerstand:
14.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
8 V
Qg - Gate-Ladung:
22 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
1.25 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 P-Channel
Marke:
ROHM Halbleiter
Vorwärtstranskonduktanz - Min:
9.7 S
Abfallzeit:
80 ns
Produktart:
MOSFET
Anstiegszeit:
40 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
105 ns
Typische Einschaltverzögerungszeit:
14 ns
Teil # Aliase:
RQ6C065BC
Tags
RQ6C, RQ6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***
Transistor MOSFET P-CH 20V 6.5A 6-Pin SOT-457T Emboss T/R
***ical
Trans MOSFET P-CH 20V 6.5A 6-Pin TSMT T/R
*** Electronics
PCH -20V -6.5A MIDDLE POWER MOSF
***ark
Mosfet, P-Ch, -20V, -6.5A, Sot-457T; Transistor Polarity:p Channel; Continuous Drain Current Id:-6.5A; Drain Source Voltage Vds:-20V; On Resistance Rds(On):0.0149Ohm; Rds(On) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-1.2V; Powerrohs Compliant: Yes
Low-Gate Drive Voltage MOSFETs
ROHM Low-Gate Drive Voltage MOSFETs have a wide drive type of 0.9 volts to 10 volts. This wide drive type range offers support for applications ranging from a small signal to high power. These MOSFETs come in a wide choice of sizes that are as small as the microminiature package (0604 sizes). This variety of sizes help to contribute to area space saving in an application. These MOSFETs offer superior high-speed switching and low On-Resistance.
Silicon Power MOSFETs
ROHM Semiconductor Silicon Power MOSFETs feature ultrafast switching speeds and low on-resistance. The MOSFETs are available in a wide lineup of packages, including the miniature 0604 package, for space saving in designs.
Teil # Mfg. Beschreibung Aktie Preis
RQ6C065BCTCR
DISTI # RQ6C065BCTCRCT-ND
ROHM SemiconductorPCH -20V -6.5A MIDDLE POWER MOSF
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
142In Stock
  • 1000:$0.2917
  • 500:$0.3646
  • 100:$0.4612
  • 10:$0.6020
  • 1:$0.6800
RQ6C065BCTCR
DISTI # RQ6C065BCTCRDKR-ND
ROHM SemiconductorPCH -20V -6.5A MIDDLE POWER MOSF
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
142In Stock
  • 1000:$0.2917
  • 500:$0.3646
  • 100:$0.4612
  • 10:$0.6020
  • 1:$0.6800
RQ6C065BCTCR
DISTI # RQ6C065BCTCRTR-ND
ROHM SemiconductorPCH -20V -6.5A MIDDLE POWER MOSF
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 15000:$0.2354
  • 6000:$0.2389
  • 3000:$0.2566
RQ6C065BCTCR
DISTI # RQ6C065BCTCR
ROHM SemiconductorPch -20V -6.5A Middle Power MOSFET, TSMT6, SOT-457T SC-95, Pch, JEDEC SOT-457T, JEITA - Tape and Reel (Alt: RQ6C065BCTCR)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.2269
  • 18000:$0.2329
  • 12000:$0.2469
  • 6000:$0.2619
  • 3000:$0.2799
RQ6C065BCTCR
DISTI # 78AC6444
ROHM SemiconductorMOSFET, P-CH, -20V, -6.5A, SOT-457T,Transistor Polarity:P Channel,Continuous Drain Current Id:-6.5A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0149ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-1.2V,PowerRoHS Compliant: Yes2449
  • 1000:$0.2870
  • 500:$0.3100
  • 250:$0.3340
  • 100:$0.3580
  • 50:$0.4230
  • 25:$0.4890
  • 10:$0.5540
  • 1:$0.6770
RQ6C065BCTCR
DISTI # 755-RQ6C065BCTCR
ROHM SemiconductorMOSFET Pch -20V -6.5A Si MOSFET
RoHS: Compliant
3247
  • 1:$0.6700
  • 10:$0.5490
  • 100:$0.3540
  • 1000:$0.2840
  • 3000:$0.2390
  • 9000:$0.2310
  • 24000:$0.2220
RQ6C065BCTCR
DISTI # 2914112
ROHM SemiconductorMOSFET, P-CH, -20V, -6.5A, SOT-457T2464
  • 500:£0.2230
  • 250:£0.2530
  • 100:£0.2840
  • 10:£0.4870
  • 1:£0.6140
RQ6C065BCTCRROHM Semiconductor 100
  • 1:¥4.4837
  • 100:¥2.5423
  • 1500:¥1.6118
  • 3000:¥1.2008
RQ6C065BCTCRROHM SemiconductorMOSFET Pch -20V -6.5A Si MOSFET
RoHS: Compliant
Americas -
    RQ6C065BCTCR
    DISTI # 2914112
    ROHM SemiconductorMOSFET, P-CH, -20V, -6.5A, SOT-457T
    RoHS: Compliant
    2449
    • 1000:$0.3120
    • 500:$0.3300
    • 250:$0.3810
    • 100:$0.4510
    • 10:$0.5530
    • 1:$0.6350
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    OMO.#: OMO-ESD5B5-0ST5G-ON-SEMICONDUCTOR

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    Mfr.#: DF11-8DP-2DSA(08)

    OMO.#: OMO-DF11-8DP-2DSA-08--HIROSE

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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1986
    Menge eingeben:
    Der aktuelle Preis von RQ6C065BCTCR dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,67 $
    0,67 $
    10
    0,55 $
    5,49 $
    100
    0,35 $
    35,40 $
    1000
    0,28 $
    284,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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