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IPW65R190CFDAFKSA1

IPW65R190CFDAFKSA1
Mfr. #:
IPW65R190CFDAFKSA1
Hersteller:
Infineon Technologies
Beschreibung:
RF Bipolar Transistors MOSFET N-Ch 650V 17.5A TO247-3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPW65R190CFDAFKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPW65R190CFDAFKSA1 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
IPW65R190CF, IPW65R190C, IPW65R19, IPW65R1, IPW65R, IPW65, IPW6, IPW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 650 V 190 mOhm 68 nC CoolMOS™ Power Mosfet - TO-247-3
***ical
Trans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3+Tab) TO-247 Tube
***Components
MOSFET 650V 17A CoolMOS CFDA Auto TO247
***i-Key
MOSFET N-CH 650V 17.5A TO247
***et Europe
MOS Power Transistors HV (>= 200V)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
Teil # Mfg. Beschreibung Aktie Preis
IPW65R190CFDAFKSA1
DISTI # 31039088		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		480
  • 500:$2.9502
  • 250:$3.2868
  • 240:$3.4650
IPW65R190CFDAFKSA1
DISTI # IPW65R190CFDAFKSA1-ND		Infineon Technologies AGMOSFET N-CH 650V 17.5A TO247
RoHS: Compliant
Min Qty: 240
Container: Tube		Temporarily Out of Stock
  • 240:$3.8494
IPW65R190CFDAFKSA1
DISTI # V36:1790_06376985		Infineon Technologies AGTrans MOSFET N-CH 650V 17.5A Automotive 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
    IPW65R190CFDAFKSA1
    DISTI # IPW65R190CFDAFKSA1    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Bulk (Alt: IPW65R190CFDAFKSA1)
    Min Qty: 153
    Container: Bulk    		Americas - 0
    • 1530:$1.9900
    • 459:$2.0900
    • 765:$2.0900
    • 306:$2.1900
    • 153:$2.2900
    IPW65R190CFDAFKSA1
    DISTI # IPW65R190CFDAFKSA1    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) - Rail/Tube (Alt: IPW65R190CFDAFKSA1)
    RoHS: Compliant
    Min Qty: 240
    Container: Tube    		Americas - 0
    • 2400:$2.1900
    • 1440:$2.2900
    • 480:$2.3900
    • 960:$2.3900
    • 240:$2.4900
    IPW65R190CFDAFKSA1
    DISTI # IPW65R190CFDA    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: IPW65R190CFDA)
    RoHS: Compliant
    Min Qty: 240    		Asia - 0
    • 12000:$2.2717
    • 6000:$2.3008
    • 2400:$2.3306
    • 1200:$2.3613
    • 720:$2.4251
    • 480:$2.4925
    • 240:$2.5637
    IPW65R190CFDAFKSA1
    DISTI # SP000928268    		Infineon Technologies AGMOS Power Transistors HV (>= 200V) (Alt: SP000928268)
    RoHS: Compliant
    Min Qty: 1    		Europe - 0
    • 1000:€1.9900
    • 100:€2.0900
    • 500:€2.0900
    • 50:€2.1900
    • 25:€2.2900
    • 10:€2.4900
    • 1:€3.0900
    IPW65R190CFDAFKSA1
    DISTI # 726-IPW65R190CFDAFKS    		Infineon Technologies AGMOSFET N-Ch 650V 17.5A TO247-3
    RoHS: Compliant    		190
    • 1:$4.7500
    • 10:$4.0300
    • 100:$3.5000
    • 250:$3.3200
    • 500:$2.9800
    IPW65R190CFDA
    DISTI # 726-IPW65R190CFDA    		Infineon Technologies AGMOSFET N-Ch 650V 17.5A TO247-3
    RoHS: Compliant    		11
    • 1:$4.7500
    • 10:$4.0300
    • 100:$3.5000
    • 250:$3.3200
    • 500:$2.9800
    IPW65R190CFDAFKSA1Infineon Technologies AGPower Field-Effect Transistor, 17.5A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
    RoHS: Compliant    		240
    • 1000:$2.1600
    • 500:$2.2700
    • 100:$2.3700
    • 25:$2.4700
    • 1:$2.6600
    IPW65R190CFDAFKSA1
    DISTI # 8577129    		Infineon Technologies AGMOSFET 650V 17A COOLMOS CFDA AUTO TO247, TU450
    • 480:£1.5590
    • 240:£1.5910
    Bild Teil # Beschreibung
    IPW65R190C7XKSA1

    Mfr.#: IPW65R190C7XKSA1

    OMO.#: OMO-IPW65R190C7XKSA1

    		 MOSFET HIGH POWER_NEW
    IPW65R190CFDAFKSA1

    Mfr.#: IPW65R190CFDAFKSA1

    OMO.#: OMO-IPW65R190CFDAFKSA1

    		 MOSFET N-Ch 650V 17.5A TO247-3
    IPW65R190CFDFKSA2

    Mfr.#: IPW65R190CFDFKSA2

    OMO.#: OMO-IPW65R190CFDFKSA2-INFINEON-TECHNOLOGIES

    		 HIGH POWER_LEGACY
    IPW65R190C6/SL21N65CT

    Mfr.#: IPW65R190C6/SL21N65CT

    OMO.#: OMO-IPW65R190C6-SL21N65CT-1190

    		 Neu und Original
    IPW65R190C6FKSA1

    Mfr.#: IPW65R190C6FKSA1

    OMO.#: OMO-IPW65R190C6FKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 20.2A TO247
    IPW65R190C7XKSA1

    Mfr.#: IPW65R190C7XKSA1

    OMO.#: OMO-IPW65R190C7XKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 20.2A TO247
    IPW65R190CFD(SP00090537

    Mfr.#: IPW65R190CFD(SP00090537

    OMO.#: OMO-IPW65R190CFD-SP00090537-1190

    		 Neu und Original
    IPW65R190CFDFKSA1

    Mfr.#: IPW65R190CFDFKSA1

    OMO.#: OMO-IPW65R190CFDFKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 17.5A TO247
    IPW65R190E6FKSA1

    Mfr.#: IPW65R190E6FKSA1

    OMO.#: OMO-IPW65R190E6FKSA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 650V 20.2A TO247
    IPW65R190C6

    Mfr.#: IPW65R190C6

    OMO.#: OMO-IPW65R190C6-124

    		 Darlington Transistors MOSFET N-Ch 700V 20.2A TO247-3 CoolMOS C6
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von IPW65R190CFDAFKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    2,98 $
    2,98 $
    10
    2,84 $
    28,36 $
    100
    2,69 $
    268,65 $
    500
    2,54 $
    1 268,65 $
    1000
    2,39 $
    2 388,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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