2N4339-E3

2N4339-E3
Mfr. #:
2N4339-E3
Hersteller:
Vishay Semiconductors
Beschreibung:
JFET RECOMMENDED ALT 106-2N4339
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2N4339-E3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2N4339-E3 Datasheet2N4339-E3 Datasheet (P4-P6)2N4339-E3 Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
JFET
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
TO-206AA
Polarität des Transistors:
N-Kanal
Aufbau:
Single
Vgs - Gate-Source-Durchbruchspannung:
- 50 V
Verpackung:
Schüttgut
Typ:
JFET
Marke:
Vishay Semiconductors
Werkspackungsmenge:
200
Tags
2N4339, 2N433, 2N43, 2N4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
N-CHANNEL JFET AMPLIFIER; Leaded Process Compatible:Yes ;RoHS Compliant: Yes
***i-Key
MOSFET N-CH 50V 1.5MA TO-206AA
***et
Trans JFET N-CH 2-Pin TO-206AA
***ser
N-Channel FETs 50V 1.5mA
***nell
N CHANNEL JFET, -57V, TO-206AA
***
TO18 NCH JFET
***ment14 APAC
N CHANNEL JFET, -57V, TO-206AA; Transistor Type:JFET; Breakdown Voltage Vbr:-57V; Gate-Source Cutoff Voltage Vgs(off) Max:-1.8V; Power Dissipation Pd:300mW; Operating Temperature Range:-55°C to +175°C; No. of Pins:3
Teil # Mfg. Beschreibung Aktie Preis
2N4339-E3
DISTI # 2N4339-E3-ND
Vishay SiliconixMOSFET N-CH 50V 1.5MA TO-206AA
RoHS: Compliant
Min Qty: 200
Container: Bulk
Limited Supply - Call
    2N4339-E3
    DISTI # 06J8862
    Vishay IntertechnologiesN CHANNEL JFET, -57V, TO-206AA,Breakdown Voltage Vbr:-57V,Zero Gate Voltage Drain Current Idss Min:500µA,Zero Gate Voltage Drain Current Idss Max:1.5mA,Gate-Source Cutoff Voltage Vgs(off) Max:-1.8V,Transistor Type:JFET , RoHS Compliant: Yes0
      2N4339-E3
      DISTI # 781-2N4339-E3
      Vishay IntertechnologiesJFET 50V 1.5mA
      RoHS: Compliant
      0
        2N4339
        DISTI # 781-2N4339
        Vishay IntertechnologiesJFET 50V 1.5mA
        RoHS: Not compliant
        0
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          INSTOCK
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          5000
          Menge eingeben:
          Der aktuelle Preis von 2N4339-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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