RLD03N06CLESM

RLD03N06CLESM
Mfr. #:
RLD03N06CLESM
Hersteller:
Rochester Electronics, LLC
Beschreibung:
Power Field-Effect Transistor, 60V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
RLD03N06CLESM Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
RLD03N06CL, RLD03N06C, RLD03, RLD0, RLD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Stockers USA
60 V 6 ohm N-CHANNEL Si POWER MOSFET TO-252AA
***S
French Electronic Distributor since 1988
Teil # Mfg. Beschreibung Aktie Preis
RLD03N06CLESMHarris SemiconductorPower Field-Effect Transistor, 60V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RoHS: Not Compliant
1025
  • 1000:$0.7600
  • 500:$0.8000
  • 100:$0.8400
  • 25:$0.8700
  • 1:$0.9400
RLD03N06CLESM9AHarris SemiconductorPower Field-Effect Transistor, 60V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RoHS: Not Compliant
2500
  • 1000:$0.4500
  • 500:$0.4700
  • 100:$0.4900
  • 25:$0.5100
  • 1:$0.5500
RLD03N06CLESM9AFairchild Semiconductor CorporationMOSFET Transistor, N-Channel, TO-252AA8
  • 3:$1.9875
  • 1:$2.3850
RLD03N06CLESM9AFairchild Semiconductor CorporationPower Field-Effect Transistor, 60V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RoHS: Not Compliant
66910
    Bild Teil # Beschreibung
    RLD03N06

    Mfr.#: RLD03N06

    OMO.#: OMO-RLD03N06-1190

    Neu und Original
    RLD03N06C

    Mfr.#: RLD03N06C

    OMO.#: OMO-RLD03N06C-1190

    MOSFET Transistor, N-Channel, TO-252AA
    RLD03N06CLE

    Mfr.#: RLD03N06CLE

    OMO.#: OMO-RLD03N06CLE-1190

    - Bulk (Alt: RLD03N06CLE)
    RLD03N06CLESM

    Mfr.#: RLD03N06CLESM

    OMO.#: OMO-RLD03N06CLESM-1190

    Power Field-Effect Transistor, 60V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RLD03N06CLESM9A

    Mfr.#: RLD03N06CLESM9A

    OMO.#: OMO-RLD03N06CLESM9A-1190

    Power Field-Effect Transistor, 60V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von RLD03N06CLESM dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    1,14 $
    1,14 $
    10
    1,08 $
    10,83 $
    100
    1,03 $
    102,60 $
    500
    0,97 $
    484,50 $
    1000
    0,91 $
    912,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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