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A3I35D025WNR1

A3I35D025WNR1
Mfr. #:
A3I35D025WNR1
Hersteller:
NXP Semiconductors
Beschreibung:
RF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
A3I35D025WNR1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
A3I35D025WNR1 Mehr Informationen A3I35D025WNR1 Product Details
Produkteigenschaft
Attributwert
Hersteller:
NXP
Produktkategorie:
HF-Verstärker
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
TO-270WB-17
Typ:
Breitband
Arbeitsfrequenz:
3200 MHz to 4000 MHz
Gewinnen:
28.9 dB
Betriebsversorgungsspannung:
28 V
Testhäufigkeit:
3800 MHz
Betriebsversorgungsstrom:
260 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Serie:
A3I35D025
Verpackung:
Spule
Marke:
NXP Semiconductors
Anzahl der Kanäle:
2 Channel
Feuchtigkeitsempfindlich:
ja
Produktart:
HF-Verstärker
Werkspackungsmenge:
500
Unterkategorie:
Drahtlose und integrierte HF-Schaltungen
Teil # Aliase:
935373852528
Tags
A3I35D02, A3I3, A3I
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
RF High-Power Wideband Drivers
NXP Semiconductors RF High-Power Wideband Drivers provide macro cellular networks that simultaneously cover multiple cellular bands. These drivers come with a superior level of integration and functionality that enables high quality and high-speed network connectivity. The RF wideband drivers are designed for digital pre-distortion error correction systems and incorporate on-chip matching (50Ω input and DC blocked). These drivers are optimized for Doherty applications and wide instantaneous bandwidth applications.
NXP RF-IF Solutions
NXP RF-IF Solutions meet the needs of the most demanding RF applications by allowing designers to meet the highest specifications for performance while still retaining potential trade-offs with respect to efficiency, power, ruggedness, consistency, and integration levels. The NXP RF-IF portfolio covers the majority of communication and transmission systems, making it easy to find a solution that matches a designer's particular requirements. NXP RF-IF solutions include the SA6xx Series RF/IF building blocks that are ideal for a variety of niche handheld RF products. Available in small-footprint packages, SA6xx solutions save PCB space while providing better RF performance.Learn More
Airfast® Third-Generation Power Amplifiers
NXP Semiconductors Airfast® Third-Generation Power Amplifiers provide the best in class performance for the critical parameters that include efficiency, gain, RF power, and signal bandwidth. The Airfast third-generation technology reduces the footprint required to deliver specific RF output power. These amplifiers include 28V and 48V LDMOS transistors. The Airfast third-generation amplifiers are designed for the asymmetrical Doherty amplifier architectures. These amplifiers feature high efficiency, reduced solution size, thermal performance, and operate at wideband frequency. The Airfast third-generation amplifiers support all global cellular standards including LTE and NR for 5G. These amplifiers reduce both the size of cellular base stations and the installation costs.
Teil # Mfg. Beschreibung Aktie Preis
A3I35D025WNR1
DISTI # V36:1790_21814491		NXP SemiconductorsAirfast RF LDMOS Wideband Integrated Power Amplifier, 3200-4000 MHz, 3.4 W Avg., 28 V0
  • 500000:$27.4800
  • 250000:$27.4900
  • 50000:$32.4300
  • 5000:$45.8600
  • 500:$48.4400
A3I35D025WNR1
DISTI # A3I35D025WNR1		Avnet, Inc.RF Power Amplifier Single 3200MHz to 4000MHz 28.9dB 17-Pin TO-270WB Thru-Hole T/R (Alt: A3I35D025WNR1)
RoHS: Compliant
Min Qty: 500
Container: Tape and Reel		Europe - 0
  • 5000:€26.8900
  • 3000:€28.8900
  • 2000:€31.0900
  • 1000:€32.2900
  • 500:€33.6900
A3I35D025WNR1
DISTI # A3I35D025WNR1		Avnet, Inc.RF Power Amplifier Single 3200MHz to 4000MHz 28.9dB 17-Pin TO-270WB Thru-Hole T/R - Tape and Reel (Alt: A3I35D025WNR1)
RoHS: Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 5000:$28.7900
  • 3000:$29.3900
  • 2000:$30.4900
  • 1000:$31.6900
  • 500:$32.9900
A3I35D025WNR1
DISTI # 65AC3711		NXP SemiconductorsAIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER, 3200-4000 MHZ, 3.4 W AVG., 28 V TR0
  • 250:$29.4800
  • 100:$30.3800
  • 50:$31.0600
  • 25:$33.3300
  • 10:$35.3700
  • 5:$37.6400
  • 1:$39.6800
A3I35D025WNR1
DISTI # 771-A3I35D025WNR1		NXP SemiconductorsRF Amplifier LDMOS Wdbnd Pwr Amp 3200-4000 MH 3.4W28V
RoHS: Compliant		490
  • 1:$48.4400
  • 5:$45.8300
  • 10:$45.1700
  • 25:$41.9000
  • 50:$40.5500
  • 100:$39.2800
  • 250:$34.0100
  • 500:$33.1700
A3I35D025WNR1
DISTI # A3I35D025WNR1		NXP SemiconductorsRF & MW POWER AMPLIFIER
RoHS: Compliant		0
  • 500:$38.5400
Bild Teil # Beschreibung
MIC94060YC6-TR

Mfr.#: MIC94060YC6-TR

OMO.#: OMO-MIC94060YC6-TR

 Power Switch ICs - Power Distribution Loadswitch w/level-shift
MIC94060YC6-TR

Mfr.#: MIC94060YC6-TR

OMO.#: OMO-MIC94060YC6-TR-MICROCHIP-TECHNOLOGY

 Power Switch ICs - Power Distribution
Verfügbarkeit
Aktie:
490
Auf Bestellung:
2473
Menge eingeben:
Der aktuelle Preis von A3I35D025WNR1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
48,44 $
48,44 $
5
45,83 $
229,15 $
10
45,17 $
451,70 $
25
41,90 $
1 047,50 $
50
40,55 $
2 027,50 $
100
39,28 $
3 928,00 $
250
34,01 $
8 502,50 $
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