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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| NE3514S02-T1D-A DISTI # 551-NE3514S02-T1D-A | California Eastern Laboratories (CEL) | RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET RoHS: Compliant | 0 | |
| NE3514S02-T1D-A | Renesas Electronics Corporation | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, Hetero-junction FET RoHS: Compliant | 50000 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: NE3514S02-T1C-A(K) OMO.#: OMO-NE3514S02-T1C-A-K--1152 |
RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, K BAND, SILICON, N-CHANNEL, HETERO-JUNCTION FET |
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Mfr.#: NE3514S02-T1B-A OMO.#: OMO-NE3514S02-T1B-A-1152 |
RF SMALL SIGNAL TRANSISTOR HFET |
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Mfr.#: NE3514S02-T1D-A OMO.#: OMO-NE3514S02-T1D-A-318 |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
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Mfr.#: NE3514S02-T1C-A OMO.#: OMO-NE3514S02-T1C-A-CEL |
RF JFET Transistors SUPER Lo Noise PseudomorpHIc HJ FET |
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Mfr.#: NE3514S02-A OMO.#: OMO-NE3514S02-A-CEL |
RF JFET Transistors K Band Super Low Noise Amp N-Ch |
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Mfr.#: NE3514S02 OMO.#: OMO-NE3514S02-1190 |
Neu und Original |
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Mfr.#: NE3514S02-T10 OMO.#: OMO-NE3514S02-T10-1190 |
Neu und Original |
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Mfr.#: NE3514S02-T1C OMO.#: OMO-NE3514S02-T1C-1190 |
Neu und Original |
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Mfr.#: NE3514S02-T1D OMO.#: OMO-NE3514S02-T1D-1190 |
Neu und Original |