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FZ750R65KE3NOSA1

FZ750R65KE3NOSA1
Mfr. #:
FZ750R65KE3NOSA1
Hersteller:
Infineon Technologies
Beschreibung:
MODULE IGBT A-IHV190-6
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FZ750R65KE3NOSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
FZ750R65K, FZ7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 6.5KV 750A 9-pin IHV190-6
***ineon SCT
6500V IHV 190mm single switch IGBT Module with IGBT3 - The best solution for your traction and industry applications, A-IHV190-6
***ark
IGBT MOD, 6.5KV, 750A; Continuous Collector Current:750A; Collector Emitter Saturation Voltage:3V; Power Dissipation:-; Operating Temperature Max:125°C; IGBT Termination:Tab; Collector Emitter Voltage Max:6.5kV; Product Range:- RoHS Compliant: Yes
***ineon
6500V IHV 190mm single switch IGBT Module with IGBT3 - The best solution for your traction and industry applications. | Summary of Features: Low V(cesat); AlSiC Base Plate for increased Thermal Cycling Capability; Extended Storage Temperature down to T(stg) = -55C; Package with CTI > 600; Package with enhanced Insulation of 10.2kV AC 1min; High Creepage and Clearance Distance | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; traction; cav
***ical
Trans IGBT Module N-CH 3300V 750A 4900000mW Automotive 5-Pin IHV73-6 Tray
***S
new, original packaged
***el Electronic
MOD IGBT MED PWR A-IHV73-6
***i-Key
IGBT MOD 3300V 750A 4900W
***el Nordic
Contact for details
***ineon
3300V IHV 73mm single switch IGBT Module with IGBT2 Low Loss and 10.2kV isolation - The best solution for your traction and industry applications. | Summary of Features: High reliability and robust module construction (6.5kV housing); 10.2kV insulation | Benefits: High power density for compact inverter designs; Standardized housing | Target Applications: drives; wind; traction; cav
***ical
Trans IGBT Module N-CH 1200V 995A 4050000mW Automotive 11-Pin ECONOD-3 Tray
***ark
Igbt, Module, N-Ch, 1.2Kv, 995A; Transistor Polarity:n Channel; Dc Collector Current:995A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:4.05Kw; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Rohs Compliant: Yes
***ineon
EconoDUAL3 1200V dual IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled Diode and NTC | Summary of Features: Low V(CEsat); T(vj op) = 150C; V(CEsat) with positive Temperature Coefficient; High Power Density; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; ups; induction-heating; welding
***ark
IGBT Array & Module Transistor, Dual NPN, 580 A, 1.75 V, 2.4 kW, 1.2 kV, Module
*** Source Electronics
Trans IGBT Module N-CH 1200V 580A 2400000mW 7-Pin 62MM-1 Tray / IGBT MODULE 1200V 450A
***ure Electronics
FF450R12KT4 Series 1200 V 580 A Trench Field-Stop IGBT Module
***nell
IGBT MODULE, DUAL NPN, 1.75V, 580A; Transistor Polarity: Dual NPN; DC Collector Current: 580A; Collector Emitter Saturation Voltage Vce(on): 1.75V; Power Dissipation Pd: 2.4kW; Collector Emitter Voltage V(br)ceo: 1.2kV; Trans
***ineon
Our well-known 62mm C-series 1200V dual IGBT modules with fast trench/fieldstop IGBT4 and Emitter Controlled diode are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
***ical
Trans IGBT Module N-CH 1200V 560A 1785000mW 7-Pin Case SP-6 Tube
*** Stop Electro
Insulated Gate Bipolar Transistor, 500A I(C), 1200V V(BR)CES, N-Channel
***rochip SCT
High Voltage Power Module, Dual common source, 1200V, RoHS
***ark
PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes
***i-Key
IGBT TRENCH DUAL SRC 1200V SP6
***el Electronic
IGBT MODULE 1200V 560A 1785W SP6
***ure Electronics
APTGT600x Series 600 V 700 A Trench + Field Stop IGBT® Power Module - SP6
*** Stop Electro
Insulated Gate Bipolar Transistor, 700A I(C), 600V V(BR)CES, N-Channel
***et
Trans IGBT Module N-CH 600V 700A 7-Pin Case SP6
***rochip SCT
High Voltage Power Module, Phase leg, 600V, RoHS
***ark
PM-IGBT-TFS-SP6C SP6C Tube RoHS Compliant: Yes
***i-Key
POWER MODULE IGBT 600V 600A SP6
***el Electronic
IGBT MODULE 600V 700A 2300W SP6
Teil # Mfg. Beschreibung Aktie Preis
FZ750R65KE3NOSA1
DISTI # FZ750R65KE3NOSA1-ND		Infineon Technologies AGMODULE IGBT A-IHV190-6
RoHS: Not compliant
Min Qty: 1
Container: Tray		Temporarily Out of Stock
  • 1:$2,700.7400
FZ750R65KE3NOSA1
DISTI # SP000555604		Infineon Technologies AGTRACTION (Alt: SP000555604)
RoHS: Not Compliant
Min Qty: 1		Europe - 26
  • 1:€2,410.0000
FZ750R65KE3NOSA1
DISTI # FZ750R65KE3NOSA1		Infineon Technologies AGTRACTION - Trays (Alt: FZ750R65KE3NOSA1)
RoHS: Not Compliant
Min Qty: 1
Container: Tray		Americas - 0
    FZ750R65KE3
    DISTI # 641-FZ750R65KE3    		Infineon Technologies AGIGBT Modules IGBT 6500V 750A0
    • 1:$2,658.2100
    Bild Teil # Beschreibung
    FZ750R65KE3

    Mfr.#: FZ750R65KE3

    OMO.#: OMO-FZ750R65KE3

    		 IGBT Modules IGBT 6500V 750A
    FZ750R65KE3

    Mfr.#: FZ750R65KE3

    OMO.#: OMO-FZ750R65KE3-125

    		 IGBT Modules IGBT 6500V 750A
    FZ750R65FE3

    Mfr.#: FZ750R65FE3

    OMO.#: OMO-FZ750R65FE3-1190

    		 Neu und Original
    FZ750R65KE3-PS-S2

    Mfr.#: FZ750R65KE3-PS-S2

    OMO.#: OMO-FZ750R65KE3-PS-S2-1190

    		 Neu und Original
    FZ750R65KE3NOSA1

    Mfr.#: FZ750R65KE3NOSA1

    OMO.#: OMO-FZ750R65KE3NOSA1-INFINEON-TECHNOLOGIES

    		 MODULE IGBT A-IHV190-6
    FZ750R65KE3T

    Mfr.#: FZ750R65KE3T

    OMO.#: OMO-FZ750R65KE3T-1190

    		 Neu und Original
    FZ750R65KE3_C1

    Mfr.#: FZ750R65KE3_C1

    OMO.#: OMO-FZ750R65KE3-C1-1190

    		 PL33, A-IHV190-6 TRACTION (Alt: FZ750R65KE3_C1)
    FZ750R65KE3_P2_S2

    Mfr.#: FZ750R65KE3_P2_S2

    OMO.#: OMO-FZ750R65KE3-P2-S2-1190

    		 Neu und Original
    FZ750R65KE3C1NOSA1

    Mfr.#: FZ750R65KE3C1NOSA1

    OMO.#: OMO-FZ750R65KE3C1NOSA1-1190

    		 IHV, IHM T, XHP 3,3-6,5K - Trays (Alt: FZ750R65KE3C1NOSA1)
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    4000
    Menge eingeben:
    Der aktuelle Preis von FZ750R65KE3NOSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    4,00 $
    4,00 $
    10
    3,00 $
    30,00 $
    100
    3,00 $
    300,00 $
    500
    3,00 $
    1 500,00 $
    1000
    3,00 $
    3 000,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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