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IRG4BC20KDPBF

IRG4BC20KDPBF
Mfr. #:
IRG4BC20KDPBF
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Transistors 600V UltraFast 8-25kHz
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRG4BC20KDPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRG4BC20KDPBF DatasheetIRG4BC20KDPBF Datasheet (P4-P6)IRG4BC20KDPBF Datasheet (P7-P9)IRG4BC20KDPBF Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
IGBTs - Single
Serie
-
Verpackung
Rohr
Gewichtseinheit
0.211644 oz
Montageart
Durchgangsloch
Paket-Koffer
TO-220-3
Eingabetyp
Standard
Befestigungsart
Durchgangsloch
Lieferanten-Geräte-Paket
TO-220AB
Aufbau
Single
Leistung max
60W
Reverse-Recovery-Time-trr
37ns
Strom-Kollektor-Ic-Max
16A
Spannungs-Kollektor-Emitter-Breakdown-Max
600V
IGBT-Typ
-
Strom-Kollektor-gepulster-Icm
32A
Vce-on-Max-Vge-Ic
2.8V @ 15V, 9A
Schaltenergie
340μJ (on), 300μJ (off)
Gate-Gebühr
34nC
Td-ein-aus-25°C
54ns/180ns
Testbedingung
480V, 9A, 50 Ohm, 15V
Pd-Verlustleistung
60 W
Mindest-Betriebstemperatur
- 55 C
Kollektor-Emitter-Spannung-VCEO-Max
600 V
Kollektor-Emitter-Sättigungsspannung
2.8 V
Kontinuierlicher Kollektorstrom-bei-25-C
16 A
Maximale Gate-Emitter-Spannung
+/- 20 V
Tags
IRG4BC20KD, IRG4BC20K, IRG4BC2, IRG4BC, IRG4B, IRG4, IRG
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop
Trans IGBT Chip N-CH 600V 16A 60000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
IRG4BC20KDPBF Series 600 V 9 A N-Channel UltraFast IGBT - TO-220AB
***ineon SCT
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE, TO220COPAK-3, RoHS
***ernational Rectifier
600V UltraFast 8-25 kHz Copack IGBT in a TO-220AB package
*** Stop Electro
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.8 V Current release time: 160 ns Power dissipation: 60 W
***ment14 APAC
IGBT, N, 600V, 16A, TO-220AB; Transistor Type:IGBT; DC Collector Current:16A; Collector Emitter Voltage Vces:2.8V; Power Dissipation Pd:60W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:16A; Package / Case:TO-220AB; Power Dissipation Max:60W; Power Dissipation Pd:60W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ineon
Target Applications: Air Conditioner; Dishwasher; Dryer; Lighting HID; Pump; Refridgeration
***ow.cn
Trans IGBT Chip N-CH 600V 16A 60000mW 3-Pin(3+Tab) TO-220AB Tube
***ure Electronics
IRG4BC20FDPBF Series NPN 600 V 60 W 9 A Bipolar Transistor - TO-220AB
***ernational Rectifier
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:16A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:60W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 16A, TO-220; Transistor Type:IGBT; DC Collector Current:16A; Collector Emitter Voltage Vces:1.66V; Power Dissipation Pd:60W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:16A; Current Temperature:25°C; Fall Time Max:220ns; Full Power Rating Temperature:25°C; Package / Case:TO-220; Power Dissipation Max:60W; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulsed Current Icm:64A; Rise Time:20ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***(Formerly Allied Electronics)
Transistor; IGBT; TO-220AB; 13 A; 600 V (Max.); 60 W (Max.); + 20 V (Max.)
***ineon SCT
Trans IGBT Chip N-CH 600V 13A 3-Pin(3+Tab) TO-220AB Tube, TO220COPAK-3, RoHS
***ure Electronics
IRG4BC20UDPBF Series 600 V 6.5 A N-Channel Ultrafast CoPack IGBT - TO-220AB
***ernational Rectifier
600V UltraFast 8-60 kHz Copack IGBT in a TO-220AB package
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:13A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:60W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 13A, TO-220; Transistor Type:IGBT; DC Collector Current:13A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:60W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:13A; Current Temperature:25°C; Fall Time Max:110ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:TO-220; Power Dissipation Max:60W; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulsed Current Icm:52A; Rise Time:15ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***p One Stop Global
Trans IGBT Chip N-CH 600V 16A 60000mW 3-Pin(3+Tab) TO-220AB Tube
***(Formerly Allied Electronics)
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
***S.I.T. Europe - USA - Asia
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***trelec
IGBT Housing type: TO-220AB Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.66 V Current release time: 210 ns Power dissipation: 60 W
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:16A; Collector Emitter Saturation Voltage, Vce(sat):2V; Power Dissipation, Pd:60W; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ment14 APAC
IGBT, 600V, 16A, TO-220; Transistor Type:IGBT; DC Collector Current:16A; Collector Emitter Voltage Vces:1.66V; Power Dissipation Pd:60W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:16A; Current Temperature:25°C; Fall Time Max:320ns; Fall Time Typ:340ns; Full Power Rating Temperature:25°C; Package / Case:TO-220; Power Dissipation Max:60W; Power Dissipation Pd:60W; Power Dissipation Pd:60W; Pulsed Current Icm:64A; Rise Time:17ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***ical
Trans IGBT Chip N-CH 600V 17A 3-Pin(3+Tab) TO-220AB Rail
***r Electronics
Insulated Gate Bipolar Transistor, 17A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, N, TO-220; Transistor type:IGBT; Voltage, Vces:600V; Current, Ic continuous a max:17A; Voltage, Vce sat max:2.7V; Power dissipation:70W; Case style:TO-220AB; Current, Icm pulsed:40A; Pin format:GCE; Pins, No. of:3; Power, Pd:70W; Power, Ptot:70W; Temperature, current:25°C; Temperature, full power rating:25°C; Termination Type:Through Hole; Time, fall:47ns; Time, rise:11ns; Transistor polarity:N; Transistors, No. of:1; Voltage, Vceo:600V
***rchild Semiconductor
The HGTP3N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for fast switching applications, such as UPS and welder.
Teil # Mfg. Beschreibung Aktie Preis
IRG4BC20KDPBF
DISTI # IRG4BC20KDPBF-ND		Infineon Technologies AGIGBT 600V 16A 60W TO220AB
RoHS: Compliant
Min Qty: 1
Container: Tube		1025In Stock
  • 1000:$1.4401
  • 500:$1.7381
  • 100:$2.1155
  • 50:$2.4830
  • 1:$2.9300
IRG4BC20KDPBF
DISTI # IRG4BC20KDPBF		Infineon Technologies AGTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: IRG4BC20KDPBF)
RoHS: Compliant
Min Qty: 1
Container: Tube		Americas - 4072
  • 1:$1.2449
  • 10:$1.2119
  • 25:$1.1809
  • 50:$1.1509
  • 100:$1.1219
  • 500:$1.0949
  • 1000:$1.0699
IRG4BC20KDPBF
DISTI # SP001544718		Infineon Technologies AGTrans IGBT Chip N-CH 600V 16A 3-Pin(3+Tab) TO-220AB (Alt: SP001544718)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.4549
  • 10:€1.3219
  • 25:€1.2119
  • 50:€1.1639
  • 100:€1.1189
  • 500:€1.0769
  • 1000:€1.0389
IRG4BC20KDPBF
DISTI # 63J7477		Infineon Technologies AGSINGLE IGBT, 600V, 16A,DC Collector Current:16A,Collector Emitter Saturation Voltage Vce(on):2.27V,Power Dissipation Pd:60W,Collector Emitter Voltage V(br)ceo:600V,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes944
  • 100:$1.9000
  • 10:$2.3700
  • 1:$2.7900
IRG4BC20KDPBF.
DISTI # 29AC7088		Infineon Technologies AGHOME APPLIANCES 59 ROHS COMPLIANT: YES0
  • 100:$1.9000
  • 10:$2.3700
  • 1:$2.7900
IRG4BC20KDPBF
DISTI # 70018416		Infineon Technologies AG600V Ultrafast 8-25 kHz COPACK IGBT IN A TO-220AB Package
RoHS: Compliant		0
  • 400:$3.5700
IRG4BC20KDPBFInfineon Technologies AGInsulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, TO-220AB
RoHS: Compliant		50
  • 1000:$1.0700
  • 500:$1.1200
  • 100:$1.1700
  • 25:$1.2200
  • 1:$1.3100
IRG4BC20KDPBFInternational Rectifier 
RoHS: Not Compliant		330
  • 1000:$1.2000
  • 500:$1.2600
  • 100:$1.3100
  • 25:$1.3700
  • 1:$1.4700
IRG4BC20KDPBFInfineon Technologies AGIRG4BC20KDPBF Series 600 V 9 A N-Channel UltraFast IGBT - TO-220AB
RoHS: Compliant		310Tube
  • 10:$1.5100
  • 300:$1.3400
IRG4BC20KDPBF
DISTI # 942-IRG4BC20KDPBF		Infineon Technologies AGIGBT Transistors 600V UltraFast 8-25kHz
RoHS: Compliant		1058
  • 1:$2.7900
  • 10:$2.3700
  • 100:$1.9000
IRG4BC20KDPBF
DISTI # 5430125P		Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 16A TO220AB, TU536
  • 500:£1.4200
  • 250:£1.5000
  • 100:£1.6100
  • 25:£1.7400
IRG4BC20KDPBF
DISTI # 5430125		Infineon Technologies AGTRANSISTOR IGBT N-CH 600V 16A TO220AB, EA140
  • 500:£1.4200
  • 250:£1.5000
  • 100:£1.6100
  • 25:£1.7400
  • 1:£2.9800
IRG4BC20KDPBF
DISTI # IRG4BC20KDPBF		Infineon Technologies AGTransistor: IGBT,600V,16A,60W,TO220AB235
  • 1:$2.2100
  • 3:$1.9800
  • 10:$1.6100
  • 50:$1.4000
IRG4BC20KDPBF
DISTI # IRG4BC20KDPBF		Infineon Technologies AG600V 16A 60W TO220AB
RoHS: Compliant		320
  • 10:€1.4200
  • 50:€1.1200
  • 100:€1.0200
  • 200:€0.9800
IRG4BC20KDPBF
DISTI # 1463244		Infineon Technologies AGIGBT, N, 600V, 16A, TO-220AB
RoHS: Compliant		3031
  • 100:$3.0100
  • 10:$3.7500
  • 1:$4.4100
IRG4BC20KDPBF
DISTI # 1463244		Infineon Technologies AGIGBT, N, 600V, 16A, TO-220AB
RoHS: Compliant		2997
  • 500:£1.3900
  • 250:£1.4300
  • 100:£1.4700
  • 10:£1.8000
  • 1:£2.4300
IRG4BC20KDPBF
DISTI # XSFP00000074467		Infineon Technologies AG 
RoHS: Compliant		250
  • 250:$1.8900
  • 100:$2.0100
Bild Teil # Beschreibung
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Mfr.#: IRG4BC20SPBF

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IRG4BC30U-STRRP

Mfr.#: IRG4BC30U-STRRP

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Mfr.#: IRG4BC30SPBF

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IRG4BC30F-STRL

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Mfr.#: IRG4BC30S

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 IGBT 600V 34A 100W TO220AB
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von IRG4BC20KDPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,99 $
0,99 $
10
0,94 $
9,45 $
100
0,90 $
89,51 $
500
0,85 $
422,65 $
1000
0,80 $
795,60 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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