SIS862DN-T1-GE3

SIS862DN-T1-GE3
Mfr. #:
SIS862DN-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 60V Vds 20V Vgs PowerPAK 1212-8
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIS862DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SIS862DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
E
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-1212-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
60 V
Id - Kontinuierlicher Drainstrom:
40 A
Rds On - Drain-Source-Widerstand:
7 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
32 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
52 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET, PowerPAK
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
3.3 mm
Serie:
SIS
Transistortyp:
1 N-Channel
Breite:
3.3 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
60 S
Abfallzeit:
5 ns
Produktart:
MOSFET
Anstiegszeit:
5 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
20 ns
Typische Einschaltverzögerungszeit:
12 ns
Tags
SIS862, SIS86, SIS8, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 60 V 8.5 mOhm 52 W TrenchFET Power Mosfet - PowerPAK 1212-8
***et
Trans MOSFET N-CH 60V 15.5A 8-Pin PowerPAK 1212 T/R
***ronik
N-CH 60V 40A 8,5mOhm PwPAK1212
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIS862DN-T1-GE3
DISTI # V36:1790_07432210
Vishay IntertechnologiesTrans MOSFET N-CH 60V 15.5A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
0
  • 3000000:$0.5522
  • 1500000:$0.5524
  • 300000:$0.5675
  • 30000:$0.5915
  • 3000:$0.5954
SIS862DN-T1-GE3
DISTI # V72:2272_07432210
Vishay IntertechnologiesTrans MOSFET N-CH 60V 15.5A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant
0
    SIS862DN-T1-GE3
    DISTI # SIS862DN-T1-GE3TR-ND
    Vishay SiliconixMOSFET N-CH 60V 40A 1212
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)
    On Order
    • 15000:$0.4536
    • 6000:$0.4713
    • 3000:$0.4961
    SIS862DN-T1-GE3
    DISTI # SIS862DN-T1-GE3CT-ND
    Vishay SiliconixMOSFET N-CH 60V 40A 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Temporarily Out of Stock
    • 1000:$0.5475
    • 500:$0.6935
    • 100:$0.8395
    • 10:$1.0770
    • 1:$1.2000
    SIS862DN-T1-GE3
    DISTI # SIS862DN-T1-GE3DKR-ND
    Vishay SiliconixMOSFET N-CH 60V 40A 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Temporarily Out of Stock
    • 1000:$0.5475
    • 500:$0.6935
    • 100:$0.8395
    • 10:$1.0770
    • 1:$1.2000
    SIS862DN-T1-GE3
    DISTI # SIS862DN-T1-GE3
    Vishay IntertechnologiesTrans MOSFET N-CH 60V 15.5A 8-Pin PowerPAK 1212 T/R (Alt: SIS862DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel
    Asia - 0
      SIS862DN-T1-GE3
      DISTI # SIS862DN-T1-GE3
      Vishay IntertechnologiesTrans MOSFET N-CH 60V 15.5A 8-Pin PowerPAK 1212 T/R (Alt: SIS862DN-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Europe - 0
      • 30000:€0.3989
      • 18000:€0.4169
      • 12000:€0.4719
      • 6000:€0.5819
      • 3000:€0.8109
      SIS862DN-T1-GE3
      DISTI # SIS862DN-T1-GE3
      Vishay IntertechnologiesTrans MOSFET N-CH 60V 15.5A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SIS862DN-T1-GE3)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 30000:$0.4327
      • 18000:$0.4447
      • 12000:$0.4573
      • 6000:$0.4767
      • 3000:$0.4913
      SIS862DN-T1-GE3
      DISTI # 40X8692
      Vishay IntertechnologiesTrans MOSFET N-CH 60V 15.5A 8-Pin PowerPAK 1212 T/R - Product that comes on tape, but is not reeled (Alt: 40X8692)
      RoHS: Compliant
      Min Qty: 5
      Container: Ammo Pack
      Americas - 0
      • 500:$0.6420
      • 250:$0.6940
      • 100:$0.7460
      • 50:$0.8220
      • 25:$0.8970
      • 10:$0.9730
      • 1:$1.1900
      SIS862DN-T1-GE3
      DISTI # 40X8692
      Vishay IntertechnologiesMOSFET Transistor, N Channel, 40 A, 60 V, 0.007 ohm, 10 V RoHS Compliant: Yes0
      • 500:$0.6480
      • 250:$0.7010
      • 100:$0.7530
      • 50:$0.8300
      • 25:$0.9060
      • 10:$0.9830
      • 1:$1.1900
      SIS862DN-T1-GE3
      DISTI # 99W9582
      Vishay IntertechnologiesMOSFET Transistor, N Channel, 40 A, 60 V, 0.007 ohm, 10 V0
      • 10000:$0.4290
      • 6000:$0.4390
      • 4000:$0.4560
      • 2000:$0.5070
      • 1000:$0.5570
      • 1:$0.5810
      SIS862DN-T1-GE3
      DISTI # 70459592
      Vishay Siliconix60V 8.5mOhm@10V 40A N-Ch G-IV
      RoHS: Compliant
      0
      • 1:$0.7150
      • 6000:$0.6890
      SIS862DN-T1-GE3
      DISTI # 78-SIS862DN-T1-GE3
      Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK 1212-8
      RoHS: Compliant
      0
      • 1:$1.1800
      • 10:$0.9720
      • 100:$0.7450
      • 500:$0.6410
      • 1000:$0.5060
      • 3000:$0.4720
      • 6000:$0.4480
      • 9000:$0.4320
      SIS862DN-T1-GE3
      DISTI # TMOSP11560
      Vishay IntertechnologiesN-CH 60V 40A 8,5mOhm PwPAK1212
      RoHS: Compliant
      Stock DE - 0Stock HK - 0Stock US - 0
      • 3000:$0.4382
      SIS862DN-T1-GE3Vishay IntertechnologiesMOSFET 60V Vds 20V Vgs PowerPAK 1212-8
      RoHS: Compliant
      Americas - Stock
        SIS862DN-T1-GE3
        DISTI # 2400398
        Vishay IntertechnologiesMOSFET, N CH, 60V, 40A, POWERPAK 1212-80
        • 500:£0.4950
        • 250:£0.5350
        • 100:£0.5750
        • 10:£0.8070
        • 1:£1.0400
        SIS862DN-T1-GE3
        DISTI # 2400398
        Vishay IntertechnologiesMOSFET, N CH, 60V, 40A, POWERPAK 1212-8
        RoHS: Compliant
        0
        • 3000:$0.9480
        • 500:$0.9670
        • 100:$1.1200
        • 10:$1.4700
        • 1:$1.7800
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        Mfr.#: SQS415ENW-T1_GE3

        OMO.#: OMO-SQS415ENW-T1-GE3

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        ISO7721DWVR

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        OMO.#: OMO-ISO7721DWVR-TEXAS-INSTRUMENTS

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        Mfr.#: ESD122DMYR

        OMO.#: OMO-ESD122DMYR-TEXAS-INSTRUMENTS

        TVS DIODE 3.6V 8.4V 3X2SON
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        Mfr.#: AC2512FK-07220RL

        OMO.#: OMO-AC2512FK-07220RL-YAGEO

        Thick Film Resistors - SMD 220 ohm 1% 200V AEC-Q200
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        1986
        Menge eingeben:
        Der aktuelle Preis von SIS862DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
        Menge
        Stückpreis
        ext. Preis
        1
        1,18 $
        1,18 $
        10
        0,97 $
        9,72 $
        100
        0,74 $
        74,50 $
        500
        0,64 $
        320,50 $
        1000
        0,51 $
        506,00 $
        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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