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STP13NM50N

STP13NM50N
Mfr. #:
STP13NM50N
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET N Ch 600V 8A Pwr MESH IGBT
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STP13NM50N Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STP13NM50N Mehr Informationen STP13NM50N Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
N
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
500 V
Id - Kontinuierlicher Drainstrom:
12 A
Rds On - Drain-Source-Widerstand:
320 mOhms
Vgs - Gate-Source-Spannung:
25 V
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
100 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Höhe:
9.15 mm
Länge:
10.4 mm
Serie:
STB13N
Transistortyp:
1 N-Channel
Breite:
4.6 mm
Marke:
STMicroelectronics
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
15 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
40 ns
Typische Einschaltverzögerungszeit:
30 ns
Gewichtseinheit:
0.011640 oz
Tags
STP13NM, STP13N, STP13, STP1, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 500V - 0.250Ohm - 12A - TO-220 - TO-220FP-I2PAK-D2PAK
***r Electronics
Power Field-Effect Transistor, 12A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET N CH 500V 12A TO-220; Transistor Polarity:N Channel; On State Resistance:250mohm; Operating Temperature Range:-55°C to +150°C; Case Style:TO-220; Cont Current Id:6A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Typ Voltage Vds:500V; Typ Voltage Vgs th:3V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
STP13NM50N
DISTI # 497-7505-5-ND		STMicroelectronicsMOSFET N-CH 500V 12A TO-220
RoHS: Compliant
Min Qty: 1000
Container: Tube		Limited Supply - Call
    STP13NM50N
    DISTI # 511-STP13NM50N    		STMicroelectronicsMOSFET N Ch 600V 8A Pwr MESH IGBT
    RoHS: Not compliant    		0
      Bild Teil # Beschreibung
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      Mfr.#: STP13NM60N 13NM60N

      OMO.#: OMO-STP13NM60N-13NM60N-1190

      		 Neu und Original
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      Mfr.#: STP13NK60ZFP(E)

      OMO.#: OMO-STP13NK60ZFP-E--1190

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      Mfr.#: STP13NM60N TO220-3

      OMO.#: OMO-STP13NM60N-TO220-3-1190

      		 Neu und Original
      STP13NM60N,13NM60N,

      Mfr.#: STP13NM60N,13NM60N,

      OMO.#: OMO-STP13NM60N-13NM60N--1190

      		 Neu und Original
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von STP13NM50N dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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