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IXTH36N20T

IXTH36N20T
Mfr. #:
IXTH36N20T
Hersteller:
Littelfuse
Beschreibung:
MOSFET 36 Amps 200V 60 Rds
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IXTH36N20T Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
IXYS
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-247-3
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
200 V
Id - Kontinuierlicher Drainstrom:
36 A
Rds On - Drain-Source-Widerstand:
60 Ohms
Verpackung:
Rohr
Serie:
IXTH36N20
Marke:
IXYS
Produktart:
MOSFET
Werkspackungsmenge:
30
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.229281 oz
Tags
IXTH36, IXTH3, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
MOSFET N-CH 200V 36A TO-247
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 0.075Ohm;ID 30A;TO-247AC;PD 214W;VGS +/-20V
***el Electronic
INFINEON IRFP250N MOSFET Transistor, N Channel, 30 A, 200 V, 75 mohm, 10 V
***ure Electronics
Single N-Channel 200 V 0.075 Ohm 123 nC HEXFET® Power Mosfet - TO-247AC
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube
***roFlash
Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***ment14 APAC
MOSFET, N, 200V, 30A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:200V; On Resistance Rds(on):75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:214W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:30A; Junction to Case Thermal Resistance A:0.83°C/W; Package / Case:TO-247AC; Power Dissipation Pd:214W; Power Dissipation Pd:214W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ineon SCT
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC Series M package, TO247-3, RoHS
***ure Electronics
Single N-Channel 200 V 75 mOhm 123 nC HEXFET® Power Mosfet - TO-247AC
***nell
MOSFET, N-CH, 200V, 30A, TO-247AC-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V;
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 30 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 75 / Gate-Source Voltage V = 20 / Fall Time ns = 33 / Rise Time ns = 43 / Turn-OFF Delay Time ns = 41 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AD / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 214
*** Electronics
MOSFET Operating temperature: -40...+175 °C Housing type: TO-247 Power dissipation: 150 W
***ineon SCT
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-247AC package, TO247-3, RoHS
***(Formerly Allied Electronics)
MOSFET, N Ch., 250V, 44A, 46 MOHM, 72 NC QG, TO-247AC, Pb-Free
***ure Electronics
Single N-Channel 250 V 46 mOhm 110 nC HEXFET® Power Mosfet - TO-247AC
***ment14 APAC
MOSFET, N, 250V, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:300V; On Resistance Rds(on):38mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:310mW; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:4229; Current Id Max:44A; Package / Case:TO-247AC; Power Dissipation Pd:310mW; Pulse Current Idm:180A; SMD Marking:310; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IXTH36N20T
DISTI # IXTH36N20T-ND		IXYS CorporationMOSFET N-CH 200V 36A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$2.7473
IXTH36N20T
DISTI # 747-IXTH36N20T		IXYS CorporationMOSFET 36 Amps 200V 60 Rds
RoHS: Compliant		0
  • 1:$3.5700
  • 10:$3.1900
  • 25:$2.7800
  • 50:$2.7200
  • 100:$2.6200
  • 250:$2.2300
  • 500:$2.1200
  • 1000:$1.7900
  • 2500:$1.5300
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
2000
Menge eingeben:
Der aktuelle Preis von IXTH36N20T dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
3,57 $
3,57 $
10
3,19 $
31,90 $
25
2,78 $
69,50 $
50
2,72 $
136,00 $
100
2,62 $
262,00 $
250
2,23 $
557,50 $
500
2,12 $
1 060,00 $
1000
1,79 $
1 790,00 $
2500
1,53 $
3 825,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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