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SISS30DN-T1-GE3

SISS30DN-T1-GE3
Mfr. #:
SISS30DN-T1-GE3
Hersteller:
Vishay
Beschreibung:
N-Channel 80-V (D-S) MOSFET PowerPAK 1212-8S 250M SG , 8.25 m @ 10V 8.2 m @ 7.5V m @ 4.5V
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SISS30DN-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
SISS30DN-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Tags
SISS3, SISS, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SISS30DN-T1-GE3
DISTI # V72:2272_22759354		Vishay IntertechnologiesN-Channel 80-V (D-S) MOSFET PowerPAK 1212-8S 250M SG , 8.25 m @ 10V 8.2 m @ 7.5Vm @ 4.5V0
    SISS30DN-T1-GE3
    DISTI # SISS30DN-T1-GE3TR-ND    		Vishay SiliconixMOSFET N-CHAN 80-V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape & Reel (TR)    		Temporarily Out of Stock
    • 15000:$0.4435
    • 6000:$0.4608
    • 3000:$0.4851
    SISS30DN-T1-GE3
    DISTI # SISS30DN-T1-GE3CT-ND    		Vishay SiliconixMOSFET N-CHAN 80-V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Temporarily Out of Stock
    • 1000:$0.5353
    • 500:$0.6781
    • 100:$0.8209
    • 10:$1.0530
    • 1:$1.1800
    SISS30DN-T1-GE3
    DISTI # SISS30DN-T1-GE3DKR-ND    		Vishay SiliconixMOSFET N-CHAN 80-V POWERPAK 1212
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Temporarily Out of Stock
    • 1000:$0.5353
    • 500:$0.6781
    • 100:$0.8209
    • 10:$1.0530
    • 1:$1.1800
    SISS30DN-T1-GE3
    DISTI # SISS30DN-T1-GE3    		Vishay IntertechnologiesTransistor MOSFET N-CH 80V 54.7A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISS30DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Reel    		Americas - 0
    • 60000:$0.4229
    • 30000:$0.4339
    • 18000:$0.4469
    • 12000:$0.4659
    • 6000:$0.4799
    SISS30DN-T1-GE3
    DISTI # SISS30DN-T1-GE3    		Vishay IntertechnologiesTransistor MOSFET N-CH 80V 54.7A 8-Pin PowerPAK 1212 T/R (Alt: SISS30DN-T1-GE3)
    RoHS: Compliant
    Min Qty: 6000
    Container: Tape and Reel    		Asia - 0
      SISS30DN-T1-GE3
      DISTI # 81AC3502      		Vishay IntertechnologiesN-CHANNEL 80-V (D-S) MOSFET0
      • 10000:$0.4200
      • 6000:$0.4290
      • 4000:$0.4460
      • 2000:$0.4950
      • 1000:$0.5450
      • 1:$0.5680
      SISS30DN-T1-GE3
      DISTI # 99AC9590      		Vishay IntertechnologiesMOSFET, N-CH, 80V, 54.7A, 150DEG C, 57W,Transistor Polarity:N Channel,Continuous Drain Current Id:54.7A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.00685ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.8V,RoHS Compliant: Yes40
      • 500:$0.6340
      • 250:$0.6860
      • 100:$0.7370
      • 50:$0.8120
      • 25:$0.8860
      • 10:$0.9610
      • 1:$1.1600
      SISS30DN-T1-GE3
      DISTI # 78-SISS30DN-T1-GE3      		Vishay IntertechnologiesMOSFET 80V Vds,20V Vgs PowerPAK 1212-8S
      RoHS: Compliant      		32
      • 1:$1.1500
      • 10:$0.9510
      • 100:$0.7300
      • 500:$0.6280
      • 1000:$0.4950
      • 3000:$0.4620
      • 6000:$0.4390
      • 9000:$0.4230
      SISS30DN-T1-GE3
      DISTI # 3019140      		Vishay IntertechnologiesMOSFET, N-CH, 80V, 54.7A, 150DEG C, 57W45
      • 100:£0.6610
      • 10:£0.9290
      • 1:£1.1800
      SISS30DN-T1-GE3
      DISTI # 3019140      		Vishay IntertechnologiesMOSFET, N-CH, 80V, 54.7A, 150DEG C, 57W
      RoHS: Compliant      		40
      • 100:$0.8610
      • 25:$1.1300
      • 5:$1.2600
      Bild Teil # Beschreibung
      SISS30DN-T1-GE3

      Mfr.#: SISS30DN-T1-GE3

      OMO.#: OMO-SISS30DN-T1-GE3

      		 MOSFET 80V Vds; 20V Vgs PowerPAK 1212-8S
      SISS30DN-T1-GE3

      Mfr.#: SISS30DN-T1-GE3

      OMO.#: OMO-SISS30DN-T1-GE3-VISHAY

      		 N-Channel 80-V (D-S) MOSFET PowerPAK 1212-8S 250M SG , 8.25 m @ 10V 8.2 m @ 7.5V m @ 4.5V
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      3000
      Menge eingeben:
      Der aktuelle Preis von SISS30DN-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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