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2SK3480-AZ

2SK3480-AZ
Mfr. #:
2SK3480-AZ
Hersteller:
Renesas Electronics
Beschreibung:
MOSFET POWER MOS FET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
2SK3480-AZ Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
2SK3480-AZ Datasheet2SK3480-AZ Datasheet (P4-P6)2SK3480-AZ Datasheet (P7-P9)2SK3480-AZ Datasheet (P10)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Renesas Elektronik
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Verpackung:
Rohr
Marke:
Renesas Elektronik
Produktart:
MOSFET
Werkspackungsmenge:
25
Unterkategorie:
MOSFETs
Gewichtseinheit:
0.063493 oz
Tags
2SK348, 2SK34, 2SK3, 2SK
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***esas
Nch Single Power MOSFET 100V 50A 31mohm MP-25/TO-220AB
***ical
Trans MOSFET N-CH 100V 50A 3-Pin(3+Tab) TO-220AB
***ponent Stockers USA
50 A 100 V 0.036 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***eco
Transistor MOSFET N Channel 100 Volt 57 Amp 3-Pin 3+ Tab TO-220AB
***ure Electronics
Single N-Channel 100 V 23 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3
***klin Elektronik
INFINEON THT MOSFET NFET 100V 57A 23mΩ 175°C TO-220 IRF3710PBF
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 18Milliohms;ID 7.3A;TO-220AB;PD 2.5W
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***Yang
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***id Electronics
Transistor MOSFET N-Ch. 59A/100V TO220 IRF 3710 PBF
***ter Electronics
MOSFET, 100V, 57A, 23 MOHM, 86.7 NC QG, TO-220AB
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W
***roFlash
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***ment14 APAC
MOSFET, N, 100V, 57A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:46A; Drain Source Voltage Vds:100V; On Resistance Rds(on):28mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:57A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***emi
Power MOSFET 60 A, 100 V, N-Channel Enhancement Mode TO-220
***ical
Trans MOSFET N-CH 100V 52A 3-Pin (3+Tab) TO-220AB Rail
***ponent Stockers USA
60 A 100 V 0.03 ohm N-CHANNEL Si POWER MOSFET TO-220AB
***r Electronics
Power Field-Effect Transistor, 60A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:60A; On Resistance, Rds(on):30mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-TO-220 ;RoHS Compliant: Yes
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.026Ohm;ID 55A;TO-220AB;PD 200W;VGS +/-16V
***ure Electronics
Single N-Channel 100 V 0.026 Ohm 140 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 100V 55A 3-Pin(3+Tab) TO-220AB Tube
***trelec
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 200 W
***ark
POWER FIELD-EFFECT TRANSISTOR, 55A I(D), 100V, 0.03OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
***ment14 APAC
MOSFET, N, 100V, 48A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):26mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:190A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
***eco
Transistor HUF75639P3 N-Channel Power MOSFET 100Volt 56A TO-220AB
***ure Electronics
N-Channel 100 V 0.025 Ohm Flange Mount UltraFET Power Mosfet - TO-220AB
***emi
N-Channel UltraFET Power MOSFET 100V, 56A, 25mΩ
***Yang
Trans MOSFET N-CH 100V 56A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET,N CH,100V,56A,TO-220AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 56A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.021ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
***rchild Semiconductor
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.
***emi
Power MOSFET, N-Channel, QFET®, 100 V, 57 A, 23 mΩ, TO-220
***Yang
Trans MOSFET N-CH 100V 57A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
N-Channel 100 V 23 mOhm Through Hole Mosfet - TO-220
***r Electronics
Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:57A; Drain Source Voltage Vds:100V; On Resistance Rds(on):23mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:160W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:57A; On State Resistance Max:23mohm; Package / Case:TO-220; Power Dissipation Pd:160W; Power Dissipation Pd:160W; Pulse Current Idm:228A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ark
Trans MOSFET N-CH 100V 47A Automotive 3-Pin(3+Tab) TO-220AB Rail
***peria
N-channel TrenchMOS standard level FET
***or
PFET, 47A I(D), 100V, 0.028OHM,
Teil # Mfg. Beschreibung Aktie Preis
2SK3480-AZ
DISTI # V99:2348_07041573		Renesas Electronics CorporationTrans MOSFET N-CH 100V 50A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant		0
  • 1300000:$1.0070
  • 650000:$1.0080
  • 130000:$1.0520
  • 13000:$1.1120
  • 1300:$1.1210
2SK3480-AZ
DISTI # V72:2272_07041573		Renesas Electronics CorporationTrans MOSFET N-CH 100V 50A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant		0
    2SK3480-AZ
    DISTI # 2SK3480-AZ-ND    		Renesas Electronics CorporationMOSFET N-CH 100V MP-25/TO-220
    RoHS: Compliant
    Min Qty: 1300
    Container: Bulk    		Temporarily Out of Stock
    • 1300:$1.1208
    2SK3480-AZ
    DISTI # 2SK3480-AZ    		Renesas Electronics CorporationTrans MOSFET N-CH 100V 50A 3-Pin(3+Tab) TO-220AB (Alt: 2SK3480-AZ)
    RoHS: Compliant
    Min Qty: 10800    		Europe - 5600
    • 108000:€1.2900
    • 32400:€1.3900
    • 54000:€1.3900
    • 21600:€1.4900
    • 10800:€1.6900
    2SK3480-AZ
    DISTI # 2SK3480-AZ    		Renesas Electronics CorporationTrans MOSFET N-CH 100V 50A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: 2SK3480-AZ)
    RoHS: Compliant
    Min Qty: 1300
    Container: Tube    		Americas - 0
    • 13000:$0.9659
    • 6500:$1.0269
    • 3900:$1.0659
    • 2600:$1.1089
    • 1300:$1.1529
    2SK3480-AZ
    DISTI # 968-2SK3480-AZ    		Renesas Electronics CorporationMOSFET POWER MOS FET
    RoHS: Compliant    		0
    • 1:$2.3900
    • 10:$2.1600
    • 25:$1.9300
    • 100:$1.7300
    • 250:$1.5400
    • 500:$1.3500
    • 1000:$1.1200
    • 2500:$1.0400
    • 5000:$0.9660
    2SK3480-AZRenesas Electronics CorporationPower Field-Effect Transistor, 50A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		10810
    • 1000:$1.4500
    • 500:$1.5200
    • 100:$1.5900
    • 25:$1.6500
    • 1:$1.7800
    2SK3480-AZNEC Electronics Group 20
      Bild Teil # Beschreibung
      2SK3476(TE12L,Q)

      Mfr.#: 2SK3476(TE12L,Q)

      OMO.#: OMO-2SK3476-TE12L-Q-

      		 RF MOSFET Transistors N-Ch Radio Freq 1A 3W 20V VDSS
      2SK3434-Z-AZ

      Mfr.#: 2SK3434-Z-AZ

      OMO.#: OMO-2SK3434-Z-AZ-1190

      		 MOSFETs
      2SK3451

      Mfr.#: 2SK3451

      OMO.#: OMO-2SK3451-1190

      		 Neu und Original
      2SK3454-AZ

      Mfr.#: 2SK3454-AZ

      OMO.#: OMO-2SK3454-AZ-1190

      		 Power Field-Effect Transistor, 7A I(D), 250V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
      2SK3457,2SK3457-AZ,K3457

      Mfr.#: 2SK3457,2SK3457-AZ,K3457

      OMO.#: OMO-2SK3457-2SK3457-AZ-K3457-1190

      		 Neu und Original
      2SK3457-AZ,2SK3457,K3457

      Mfr.#: 2SK3457-AZ,2SK3457,K3457

      OMO.#: OMO-2SK3457-AZ-2SK3457-K3457-1190

      		 Neu und Original
      2SK3473

      Mfr.#: 2SK3473

      OMO.#: OMO-2SK3473-1190

      		 Neu und Original
      2SK3480(0)-Z-E1-AZ

      Mfr.#: 2SK3480(0)-Z-E1-AZ

      OMO.#: OMO-2SK3480-0--Z-E1-AZ-1190

      		 Neu und Original
      2SK3491

      Mfr.#: 2SK3491

      OMO.#: OMO-2SK3491-1190

      		 Neu und Original
      2SK3469-01MR-F82

      Mfr.#: 2SK3469-01MR-F82

      OMO.#: OMO-2SK3469-01MR-F82-1190

      		 INSTOCK
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      1000
      Menge eingeben:
      Der aktuelle Preis von 2SK3480-AZ dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      2,39 $
      2,39 $
      10
      2,16 $
      21,60 $
      25
      1,93 $
      48,25 $
      100
      1,73 $
      173,00 $
      250
      1,54 $
      385,00 $
      500
      1,35 $
      675,00 $
      1000
      1,12 $
      1 120,00 $
      2500
      1,04 $
      2 600,00 $
      5000
      0,97 $
      4 830,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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