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DE150-501N04A

DE150-501N04A
Mfr. #:
DE150-501N04A
Hersteller:
IXYS Corporation
Beschreibung:
MOSFET, N, RF, 500V, DE150, Drain Source Voltage Vds:500V, Continuous Drain Current Id:4.5A, Power Dissipation Pd:200W, Operating Frequency Min:-, Operating Frequency Max:100MHz, RF Transistor C
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
DE150-501N04A Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
DE150, DE15, DE1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 500V 4.5A
***ark
MOSFET, N, RF, 500V, DE150; Drain Source Voltage Vds:500V; Continuous Drain Current Id:4.5A; Power Dissipation:200W; Operating Frequency Min:-; Operating Frequency Max:100MHz; No. of Pins:6Pins; Operating Temperature Max:175°C; MSL:-RoHS Compliant: Yes
***i-Key
RF MOSFET N-CHANNEL DE150
***emi
N-Channel Power MOSFET, QFET®, 500 V, 5 A, 1.4 Ω, D2PAK
***et Europe
Trans MOSFET N-CH 500V 5A 3-Pin(2+Tab) D2PAK T/R
***ment14 APAC
MOSFET, N-CH, 500V, 5A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Source Voltage Vds:500V; On Resistance
***r Electronics
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ical
Trans MOSFET N-CH 500V 11.1A Automotive 3-Pin(3+Tab) TO-220FP Tube
*** Electronic Components
Darlington Transistors MOSFET N-Ch 500V 5.4A TO220FP-3 CoolMOS CE
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 7.1pF 50volts C0G +/-0.5pF
***nell
MOSFET, N-CH, 500V, 11.1A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 11.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.45ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V;
***ineon SCT
500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO220-3, RoHS
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11.1 / Drain-Source Voltage (Vds) V = 550 / ON Resistance (Rds(on)) mOhm = 500 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 30 / Turn-ON Delay Time ns = 6 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 150 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 28
***ineon
500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox
***Yang
Trans MOSFET N-CH 150V 5A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube
***inecomponents.com
TO-220AB, SINGLE, N-CH, 150V, 42MOHM ULTRAFET TRENCH MOSFET
***emi
N-Channel PowerTrench® MOSFET 150V, 35A, 42mΩ
***enic
150V 35A 42m´Î@10V12A 150W 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 5A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, SMD, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:150V; On Resistance Rds(on):42mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:35A; Package / Case:TO-220AB; Power Dissipation Pd:150W; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***emi
N-Channel Power MOSFET, UniFETTM, 500 V, 5 A, 1.4 Ω, TO-220F
***Yang
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220F Rail - Rail/Tube
***r Electronics
Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
***icroelectronics
N-channel 500 V, 0.73 Ohm, 5 A MDmesh(TM) II Power MOSFET in TO-220
***ure Electronics
N-Channel 550 V 0.79 Ohm Flange Mount MDmesh II Power MosFet - TO-220
***ical
Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220AB Tube
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 5A I(D), 500V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET, N CH, 500V, 5A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Product Range:- RoHS Compliant: Yes
***icroelectronics
N-CHANNEL 500V - 0.93͐2;6; - 5.6A DPAK Zener-Protected SuperMESH™ MOSFET
***ure Electronics
N-Channel 500 V 1.2 Ohm Surface Mount SuperMESH™ MosFet - TO-252-3
*** Source Electronics
Trans MOSFET N-CH 500V 5.6A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 500V 5.6A DPAK
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 5.6A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***ark
N CH POWER MOSFET, SuperMESH, 500V, 5.6A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5.6A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Power Dissipation:90W RoHS Compliant: Yes
***nell
MOSFET, N CH, 500V, 5.6A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.6A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.93ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 90W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C
Teil # Mfg. Beschreibung Aktie Preis
DE-150-501N04A
DISTI # V36:1790_17751752		IXYS CorporationTrans MOSFET N-CH 500V 4.5A 6-Pin
RoHS: Compliant		0
  • 1000:$9.8290
  • 500:$12.6500
  • 100:$15.5600
  • 5:$30.1600
  • 1:$31.3800
150-501N04A-00
DISTI # 150-501N04A-00-ND		IXYS CorporationRF MOSFET N-CHANNEL DE150
RoHS: Compliant
Min Qty: 1
Container: Tube		35In Stock
  • 120:$22.7204
  • 40:$24.4460
  • 10:$26.6030
  • 1:$28.7600
DE150-501N04A
DISTI # 42M1752		IXYS CorporationMOSFET, N, RF, 500V, DE150,Drain Source Voltage Vds:500V,Continuous Drain Current Id:4.5A,Power Dissipation Pd:200W,Operating Frequency Min:-,Operating Frequency Max:100MHz,RF Transistor Case:DE-150,No. of Pins:6Pins,MSL:- RoHS Compliant: Yes82
  • 250:$23.9200
  • 100:$24.7200
  • 50:$25.2700
  • 25:$27.0900
  • 10:$28.7800
  • 5:$30.4500
  • 1:$32.1000
DE150-501N04A
DISTI # 1347730		IXYS CorporationMOSFET, N, RF, DE15062
  • 100:£37.8400
  • 50:£42.0500
  • 10:£45.9100
  • 5:£52.4300
  • 1:£61.1200
DE150-501N04A
DISTI # 1347730		IXYS CorporationMOSFET, N, RF, DE150
RoHS: Compliant		96
  • 250:$39.2200
  • 100:$40.4300
  • 25:$41.8700
  • 10:$44.2500
  • 1:$45.0900
Bild Teil # Beschreibung
DE150-101N09A

Mfr.#: DE150-101N09A

OMO.#: OMO-DE150-101N09A-1190

 Neu und Original
DE150-102N02A

Mfr.#: DE150-102N02A

OMO.#: OMO-DE150-102N02A-1190

 Neu und Original
DE150-201N09A

Mfr.#: DE150-201N09A

OMO.#: OMO-DE150-201N09A-1190

 Neu und Original
DE150-501N04A

Mfr.#: DE150-501N04A

OMO.#: OMO-DE150-501N04A-1152

 MOSFET, N, RF, 500V, DE150, Drain Source Voltage Vds:500V, Continuous Drain Current Id:4.5A, Power Dissipation Pd:200W, Operating Frequency Min:-, Operating Frequency Max:100MHz, RF Transistor C
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von DE150-501N04A dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
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Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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