NGTB20N120IHWG

NGTB20N120IHWG
Mfr. #:
NGTB20N120IHWG
Hersteller:
ON Semiconductor
Beschreibung:
IGBT Transistors LC IH RC OSV
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
NGTB20N120IHWG Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NGTB20N120IHWG DatasheetNGTB20N120IHWG Datasheet (P4-P6)NGTB20N120IHWG Datasheet (P7)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
IGBT-Transistoren
RoHS:
Y
Technologie:
Si
Paket / Koffer:
TO-247-3
Montageart:
Durchgangsloch
Aufbau:
Single
Kollektor- Emitterspannung VCEO Max:
1.2 kV
Kollektor-Emitter-Sättigungsspannung:
2.2 V
Maximale Gate-Emitter-Spannung:
20 V
Kontinuierlicher Kollektorstrom bei 25 C:
40 A
Pd - Verlustleistung:
341 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 175 C
Verpackung:
Rohr
Kontinuierlicher Kollektorstrom Ic Max:
20 A
Marke:
ON Semiconductor
Gate-Emitter-Leckstrom:
100 nA
Produktart:
IGBT-Transistoren
Werkspackungsmenge:
30
Unterkategorie:
IGBTs
Gewichtseinheit:
1.340411 oz
Tags
NGTB20N120I, NGTB20N12, NGTB20N1, NGTB20N, NGTB20, NGTB2, NGTB, NGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Igbt Single Transistor, 40 A, 2.2 V, 341 W, 1.2 Kv, To-247, 3
***ical
Trans IGBT Chip N-CH 1200V 40A 341000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 40A, TO-247-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 2.2V; Power Dissipation Pd: 341W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
NGTB20N120IHWG
DISTI # V99:2348_07316661
ON SemiconductorTrans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant
24
  • 500:$2.6340
  • 250:$2.9680
  • 100:$3.1540
  • 10:$3.6740
  • 1:$4.7949
NGTB20N120IHWG
DISTI # NGTB20N120IHWGOS-ND
ON SemiconductorIGBT 20A 1200V TO-247
RoHS: Compliant
Container: Tube
Limited Supply - Call
    NGTB20N120IHWG
    DISTI # 25863720
    ON SemiconductorTrans IGBT Chip N-CH 1.2KV 40A 3-Pin(3+Tab) TO-247 Tube
    RoHS: Compliant
    24
    • 3:$4.7949
    NGTB20N120IHWG
    DISTI # NGTB20N120IHWG
    ON SemiconductorTrans IGBT Chip N-CH 1200V 40A 3-Pin TO-247 Rail - Bulk (Alt: NGTB20N120IHWG)
    Min Qty: 136
    Container: Bulk
    Americas - 0
    • 1360:$2.1900
    • 272:$2.2900
    • 408:$2.2900
    • 680:$2.2900
    • 136:$2.3900
    NGTB20N120IHWG
    DISTI # 863-NGTB20N120IHWG
    ON SemiconductorIGBT Transistors LC IH RC OSV
    RoHS: Compliant
    11
    • 1:$4.3900
    • 10:$3.7300
    • 100:$3.2300
    • 250:$3.0700
    • 500:$2.7500
    NGTB20N120IHWGON SemiconductorInsulated Gate Bipolar Transistor
    RoHS: Compliant
    180
    • 1000:$2.4200
    • 500:$2.5500
    • 100:$2.6500
    • 25:$2.7700
    • 1:$2.9800
    NGTB20N120IHWG
    DISTI # 8829815P
    ON SemiconductorIGBT N-CH 1200V 20A TO247, TU4
    • 100:£2.4300
    • 50:£2.6800
    • 20:£2.7450
    • 10:£2.8050
    NGTB20N120IHWG
    DISTI # 2492857
    ON SemiconductorIGBT, SINGLE, 1.2KV, 40A, TO-247-3
    RoHS: Compliant
    14
    • 500:£2.1000
    • 250:£2.3400
    • 100:£2.4600
    • 10:£2.8500
    • 1:£3.7400
    Bild Teil # Beschreibung
    OP2177ARZ-REEL

    Mfr.#: OP2177ARZ-REEL

    OMO.#: OMO-OP2177ARZ-REEL

    Precision Amplifiers Prec Low Noise Low Input Bias Crnt Dual
    IR2130STRPBF

    Mfr.#: IR2130STRPBF

    OMO.#: OMO-IR2130STRPBF

    Gate Drivers 3 PHASE DRVR INVERTING INPUT
    MT25QL128ABA1ESE-0SIT TR

    Mfr.#: MT25QL128ABA1ESE-0SIT TR

    OMO.#: OMO-MT25QL128ABA1ESE-0SIT-TR

    NOR Flash SPI FLASH NOR SLC 32MX4 SOIC
    IRFR2905ZTRPBF

    Mfr.#: IRFR2905ZTRPBF

    OMO.#: OMO-IRFR2905ZTRPBF

    MOSFET 55V 1 N-CH HEXFET 14.5mOhms 29nC
    IRF3710STRLPBF

    Mfr.#: IRF3710STRLPBF

    OMO.#: OMO-IRF3710STRLPBF

    MOSFET MOSFT 100V 57A 23mOhm 86.7nC
    DG412DYZ

    Mfr.#: DG412DYZ

    OMO.#: OMO-DG412DYZ

    Analog Switch ICs SWITCH 4X SPST N.O. 16NSOIC IND
    IR2130STRPBF

    Mfr.#: IR2130STRPBF

    OMO.#: OMO-IR2130STRPBF-INFINEON-TECHNOLOGIES

    Gate Drivers 3 PHASE DRVR INVERTING INPUT
    CHV2010-FX-2203ELF

    Mfr.#: CHV2010-FX-2203ELF

    OMO.#: OMO-CHV2010-FX-2203ELF-BOURNS

    Thick Film Resistors - SMD 220K .5W 1% TCR100 RES SMD
    OP2177ARZ-REEL

    Mfr.#: OP2177ARZ-REEL

    OMO.#: OMO-OP2177ARZ-REEL-ANALOG-DEVICES

    Precision Amplifiers Prec Low Noise Low Input Bias Crnt Dual
    B82789C0104N002

    Mfr.#: B82789C0104N002

    OMO.#: OMO-B82789C0104N002-EPCOS

    Common Mode Filters / Chokes 100uH 150mA -30%/50% 5.2x3.2mm SMD
    Verfügbarkeit
    Aktie:
    11
    Auf Bestellung:
    1994
    Menge eingeben:
    Der aktuelle Preis von NGTB20N120IHWG dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Beginnen mit
    Top