BSC014N04LSTATMA1

BSC014N04LSTATMA1
Mfr. #:
BSC014N04LSTATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET DIFFERENTIATED MOSFETS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC014N04LSTATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
40 V
Id - Kontinuierlicher Drainstrom:
100 A
Rds On - Drain-Source-Widerstand:
1.4 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
61 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
96 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
120 S
Abfallzeit:
7 ns
Produktart:
MOSFET
Anstiegszeit:
9 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
35 ns
Typische Einschaltverzögerungszeit:
8 ns
Teil # Aliase:
BSC014N04LST SP001657070
Tags
BSC014N04, BSC014N0, BSC014, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
OptiMOS Power Transistor MOSFET N-Channel 40V 100A 8-Pin TDSON-FL T/R
***et
Transistor MOSFET N-Channel 650V 20.2A 5-Pin VSON T/R
***ical
Trans MOSFET N-CH 40V 33A 8-Pin TDSON EP T/R
***i-Key
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 40V, 100A, 115W, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(On):0.0011Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 40V, 100A, 115W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0011ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:115W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 40V, 100A, 115W, TDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:40V; Resistenza di Attivazione Rds(on):0.0011ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2V; Dissipazione di Potenza Pd:115W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Teil # Mfg. Beschreibung Aktie Preis
BSC014N04LSTATMA1
DISTI # V72:2272_19084603
Infineon Technologies AGBSC014N04LST1881
  • 75000:$0.9969
  • 30000:$1.0096
  • 15000:$1.0224
  • 6000:$1.0351
  • 3000:$1.0479
  • 1000:$1.0607
  • 500:$1.2829
  • 250:$1.4196
  • 100:$1.4938
  • 50:$1.5049
  • 25:$1.6722
  • 10:$1.8580
  • 1:$2.3996
BSC014N04LSTATMA1
DISTI # BSC014N04LSTATMA1CT-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6531In Stock
  • 1000:$1.1755
  • 500:$1.4187
  • 100:$1.7268
  • 10:$2.1480
  • 1:$2.3900
BSC014N04LSTATMA1
DISTI # BSC014N04LSTATMA1DKR-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6531In Stock
  • 1000:$1.1755
  • 500:$1.4187
  • 100:$1.7268
  • 10:$2.1480
  • 1:$2.3900
BSC014N04LSTATMA1
DISTI # BSC014N04LSTATMA1TR-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
5000In Stock
  • 10000:$0.9970
  • 5000:$1.0232
BSC014N04LSTATMA1
DISTI # 30276661
Infineon Technologies AGBSC014N04LST1881
  • 6000:$1.0351
  • 3000:$1.0479
  • 1000:$1.0607
  • 500:$1.2829
  • 250:$1.4196
  • 100:$1.4938
  • 50:$1.5049
  • 25:$1.6722
  • 10:$1.8580
  • 7:$2.3996
BSC014N04LSTATMA1
DISTI # BSC014N04LSTATMA1
Infineon Technologies AGOptiMOS Power Transistor MOSFET N-Channel 40V 100A 8-Pin TDSON-FL T/R - Tape and Reel (Alt: BSC014N04LSTATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 50000:$0.9519
  • 30000:$0.9689
  • 20000:$1.0029
  • 10000:$1.0409
  • 5000:$1.0799
BSC014N04LSTATMA1
DISTI # SP001657070
Infineon Technologies AGOptiMOS Power Transistor MOSFET N-Channel 40V 100A 8-Pin TDSON-FL T/R (Alt: SP001657070)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 50000:€0.9499
  • 30000:€0.9889
  • 20000:€1.0199
  • 10000:€1.0999
  • 5000:€1.4149
BSC014N04LSTATMA1
DISTI # 93AC6981
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, 115W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0011ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power RoHS Compliant: Yes5000
  • 1000:$1.0900
  • 500:$1.3200
  • 250:$1.4200
  • 100:$1.5200
  • 50:$1.6400
  • 25:$1.7600
  • 10:$1.8900
  • 1:$2.2200
BSC014N04LSTATMA1
DISTI # 726-BSC014N04LSTATM1
Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant
7159
  • 1:$2.2000
  • 10:$1.8700
  • 100:$1.5000
  • 500:$1.3100
  • 1000:$1.0800
BSC014N04LSTATMA1
DISTI # 2986439
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, 115W, TDSON10000
  • 500:£0.9460
  • 250:£1.0100
  • 100:£1.0800
  • 10:£1.3600
  • 1:£1.8100
BSC014N04LSTATMA1
DISTI # 2986439
Infineon Technologies AGMOSFET, N-CH, 40V, 100A, 115W, TDSON
RoHS: Compliant
10000
  • 500:$1.5400
  • 250:$1.6900
  • 100:$1.8200
  • 10:$2.1900
  • 1:$2.8600
Bild Teil # Beschreibung
TL331KDBVR

Mfr.#: TL331KDBVR

OMO.#: OMO-TL331KDBVR

Analog Comparators Sgl Diff COMPARATOR
BSS123

Mfr.#: BSS123

OMO.#: OMO-BSS123

MOSFET SOT-23 N-CH LOGIC
BSZ025N04LS

Mfr.#: BSZ025N04LS

OMO.#: OMO-BSZ025N04LS

MOSFET MV POWER MOS
LMZ23605TZE/NOPB

Mfr.#: LMZ23605TZE/NOPB

OMO.#: OMO-LMZ23605TZE-NOPB

Switching Voltage Regulators 5A SIMPLE SWITCHER Power Module with 36
LVT12R0050FER

Mfr.#: LVT12R0050FER

OMO.#: OMO-LVT12R0050FER

Current Sense Resistors - SMD 0.005 ohm 1% 1.0W Current Sense
LVT12R0100FER

Mfr.#: LVT12R0100FER

OMO.#: OMO-LVT12R0100FER

Current Sense Resistors - SMD 0.01 ohm 1% 1.0W Current Sense
LVT12R0150FER

Mfr.#: LVT12R0150FER

OMO.#: OMO-LVT12R0150FER

Current Sense Resistors - SMD 0.015 ohm 1% 1.0W Current Sense
TL331KDBVR

Mfr.#: TL331KDBVR

OMO.#: OMO-TL331KDBVR-TEXAS-INSTRUMENTS

Analog Comparators Sgl Diff COMPARATOR
PMR18EZPFU7L00

Mfr.#: PMR18EZPFU7L00

OMO.#: OMO-PMR18EZPFU7L00-ROHM-SEMI

RES 0.007 OHM 1% 1W 1206
IHLP6767GZER150M01

Mfr.#: IHLP6767GZER150M01

OMO.#: OMO-IHLP6767GZER150M01-VISHAY-DALE

Fixed Inductors 15uH 20% upto 2MHz
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1989
Menge eingeben:
Der aktuelle Preis von BSC014N04LSTATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,20 $
2,20 $
10
1,87 $
18,70 $
100
1,50 $
150,00 $
500
1,31 $
655,00 $
1000
1,08 $
1 080,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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