SIDR668DP-T1-GE3

SIDR668DP-T1-GE3
Mfr. #:
SIDR668DP-T1-GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SIDR668DP-T1-GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR668DP-T1-GE3 DatasheetSIDR668DP-T1-GE3 Datasheet (P4-P6)SIDR668DP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Mehr Informationen:
SIDR668DP-T1-GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8DC-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
95 A
Rds On - Drain-Source-Widerstand:
5.05 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
7.5 V
Qg - Gate-Ladung:
72 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
125 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
TrenchFET
Verpackung:
Spule
Serie:
SID
Transistortyp:
1 N-Channel
Marke:
Vishay / Siliconix
Abfallzeit:
28 ns
Produktart:
MOSFET
Anstiegszeit:
25 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
38 ns
Typische Einschaltverzögerungszeit:
22 ns
Tags
SIDR6, SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Teil # Mfg. Beschreibung Aktie Preis
SIDR668DP-T1-GE3
DISTI # 29499188
Vishay IntertechnologiesN-Channel 100 V (D-S) MOSFET3000
  • 3000:$1.4091
SIDR668DP-T1-GE3
DISTI # SIDR668DP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 100V
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5839In Stock
  • 1000:$1.4819
  • 500:$1.7885
  • 100:$2.1769
  • 10:$2.7080
  • 1:$3.0100
SIDR668DP-T1-GE3
DISTI # SIDR668DP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 100V
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5839In Stock
  • 1000:$1.4819
  • 500:$1.7885
  • 100:$2.1769
  • 10:$2.7080
  • 1:$3.0100
SIDR668DP-T1-GE3
DISTI # SIDR668DP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 100V
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 6000:$1.3230
  • 3000:$1.3395
SIDR668DP-T1-GE3
DISTI # 59AC7340
Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET0
  • 10000:$1.1900
  • 6000:$1.2300
  • 4000:$1.2800
  • 2000:$1.4200
  • 1000:$1.5000
  • 1:$1.5900
SIDR668DP-T1-GE3
DISTI # 78AC6505
Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, 150DEG C, 125W,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.004ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.4V,Power RoHS Compliant: Yes0
  • 500:$1.6700
  • 250:$1.7900
  • 100:$1.9100
  • 50:$2.0900
  • 25:$2.2700
  • 10:$2.4500
  • 1:$2.9600
SIDR668DP-T1-GE3
DISTI # 78-SIDR668DP-T1-GE3
Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
RoHS: Compliant
9739
  • 1:$2.9300
  • 10:$2.4300
  • 100:$1.8900
  • 500:$1.6500
  • 1000:$1.3700
  • 3000:$1.2700
  • 6000:$1.2200
SIDR668DP-T1-GE3
DISTI # 2932900
Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, 150DEG C, 125W6000
  • 500:£1.2100
  • 250:£1.3000
  • 100:£1.3800
  • 10:£1.7800
  • 1:£2.4200
SIDR668DP-T1-GE3
DISTI # 2932900
Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, 150DEG C, 125W
RoHS: Compliant
6000
  • 1000:$2.5300
  • 500:$2.6800
  • 250:$2.8400
  • 100:$3.1000
  • 10:$3.5700
  • 1:$4.1000
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Gate Drivers Fast 150V Protected High Side NMOS Static Switch Driver
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OMO.#: OMO-AQHV15-01ETG-C

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MOSFET 100V 4.0 mOhm N-Ch NexFET Power MOSFET
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Switching Voltage Regulators NIXON TPS560430X3FDBVT DC-DC CONVERTER
TLV76012DBZR

Mfr.#: TLV76012DBZR

OMO.#: OMO-TLV76012DBZR

LDO Voltage Regulators LOW-DROPOUT LINEAR VOLTAGE REGULATOR
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Mfr.#: TPS560430X3FDBVT

OMO.#: OMO-TPS560430X3FDBVT-TEXAS-INSTRUMENTS

IC REG BUCK 3.3V 600MA SOT23-6
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1992
Menge eingeben:
Der aktuelle Preis von SIDR668DP-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,93 $
2,93 $
10
2,43 $
24,30 $
100
1,89 $
189,00 $
500
1,65 $
825,00 $
1000
1,37 $
1 370,00 $
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