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BSB015N04NX3 G

BSB015N04NX3 G
Mfr. #:
BSB015N04NX3 G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSB015N04NX3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
Transistoren - FETs, MOSFETs - Single
Serie
OptiMOS 3
Verpackung
Spule
Teil-Aliasnamen
BSB015N04NX3GXT BSB015N04NX3GXUMA1 SP000597852
Montageart
SMD/SMT
Handelsname
OptiMOS
Paket-Koffer
WDSON-2
Technologie
Si
Anzahl der Kanäle
1 Channel
Aufbau
Single Quad Drain Triple Source
Transistor-Typ
1 N-Channel
Pd-Verlustleistung
2.8 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 40 C
Abfallzeit
7.6 ns
Anstiegszeit
6.4 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
35 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Rds-On-Drain-Source-Widerstand
1.5 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
36 ns
Typische-Einschaltverzögerungszeit
23 ns
Kanal-Modus
Erweiterung
Tags
BSB015N, BSB015, BSB01, BSB0, BSB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Teil # Mfg. Beschreibung Aktie Preis
BSB015N04NX3GXUMA1
DISTI # V72:2272_06378249		Infineon Technologies AGTrans MOSFET N-CH 40V 35A 7-Pin WDSON T/R
RoHS: Compliant		3034
  • 3000:$1.4150
  • 1000:$1.4290
  • 500:$1.5120
  • 250:$1.6470
  • 100:$1.8900
  • 25:$2.3260
  • 10:$2.5460
  • 1:$2.8300
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1TR-ND		Infineon Technologies AGMOSFET N-CH 40V 180A 2WDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		On Order
  • 5000:$1.5291
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1CT-ND		Infineon Technologies AGMOSFET N-CH 40V 180A 2WDSON
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$1.7226
  • 500:$2.0425
  • 100:$2.5224
  • 10:$3.0760
  • 1:$3.4500
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 40V 180A 2WDSON
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$1.7226
  • 500:$2.0425
  • 100:$2.5224
  • 10:$3.0760
  • 1:$3.4500
BSB015N04NX3GXUMA1
DISTI # 30729203		Infineon Technologies AGTrans MOSFET N-CH 40V 35A 7-Pin WDSON T/R
RoHS: Compliant		3034
  • 3000:$1.4150
  • 1000:$1.4290
  • 500:$1.5120
  • 250:$1.6470
  • 100:$1.8900
  • 25:$2.3260
  • 10:$2.5460
  • 5:$2.8300
BSB015N04NX3GXUMA1
DISTI # BSB015N04NX3GXUMA1		Infineon Technologies AGTrans MOSFET N-CH 40V 35A 5-Pin WDSON-2 T/R - Tape and Reel (Alt: BSB015N04NX3GXUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$1.4900
  • 10000:$1.4900
  • 20000:$1.3900
  • 30000:$1.3900
  • 50000:$1.2900
BSB015N04NX3GXUMA1
DISTI # 34AC1373		Infineon Technologies AGMOSFET, N-CH, 40V, 180A, WDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0013ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power DissipationRoHS Compliant: Yes8825
  • 1:$3.4700
  • 10:$3.0600
  • 25:$2.7600
  • 50:$2.4600
  • 100:$2.1500
  • 250:$1.8400
  • 500:$1.6800
  • 1000:$1.5900
BSB015N04NX3GXUMA1Infineon Technologies AGPower Field-Effect Transistor, 35A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant		95
  • 1000:$1.3200
  • 500:$1.3900
  • 100:$1.4400
  • 25:$1.5000
  • 1:$1.6200
BSB015N04NX3 G
DISTI # 726-BS726-B015N04NX3		Infineon Technologies AGMOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
RoHS: Compliant		0
  • 1:$2.8800
  • 10:$2.4500
  • 100:$2.1200
  • 250:$2.0100
  • 500:$1.8100
  • 1000:$1.5300
  • 2500:$1.4500
  • 5000:$1.3900
BSB015N04NX3GXUMA1
DISTI # 2781050		Infineon Technologies AGMOSFET, N-CH, 40V, 180A, WDSON
RoHS: Compliant		8825
  • 1:$3.2200
  • 10:$3.0100
  • 100:$2.6600
  • 250:$2.5200
  • 500:$2.3900
  • 1000:$2.2700
BSB015N04NX3GXUMA1
DISTI # C1S322000618394		Infineon Technologies AGMOSFETs
RoHS: Compliant		3034
  • 250:$1.6470
  • 100:$1.8900
  • 25:$2.3260
  • 10:$2.5460
  • 1:$2.8300
BSB015N04NX3GXUMA1
DISTI # 2781050		Infineon Technologies AGMOSFET, N-CH, 40V, 180A, WDSON
RoHS: Compliant		8825
  • 1:£3.7900
  • 10:£3.0100
  • 100:£2.4600
Bild Teil # Beschreibung
BSB015N04NX3 G

Mfr.#: BSB015N04NX3 G

OMO.#: OMO-BSB015N04NX3-G

 MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
BSB015N04NX3GXUMA1

Mfr.#: BSB015N04NX3GXUMA1

OMO.#: OMO-BSB015N04NX3GXUMA1

 MOSFET MV POWER MOS
BSB015N04NX3GXUMA1

Mfr.#: BSB015N04NX3GXUMA1

OMO.#: OMO-BSB015N04NX3GXUMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CH 40V 180A 2WDSON
BSB015N04NX3G

Mfr.#: BSB015N04NX3G

OMO.#: OMO-BSB015N04NX3G-1190

 Trans MOSFET N-CH 40V 35A 5-Pin WDSON-2 T/R (Alt: SP000597852)
BSB015N04NX3 G

Mfr.#: BSB015N04NX3 G

OMO.#: OMO-BSB015N04NX3-G-128

 MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von BSB015N04NX3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
2,08 $
2,08 $
10
1,98 $
19,81 $
100
1,88 $
187,65 $
500
1,77 $
886,15 $
1000
1,67 $
1 668,00 $
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