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S29GL256S11FHIV10

S29GL256S11FHIV10
Mfr. #:
S29GL256S11FHIV10
Hersteller:
Cypress Semiconductor
Beschreibung:
NOR Flash Nor
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
S29GL256S11FHIV10 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
S29GL256S11FHIV10 Mehr Informationen S29GL256S11FHIV10 Product Details
Produkteigenschaft
Attributwert
Hersteller:
Cypress Semiconductor
Produktkategorie:
NOR-Blitz
RoHS:
Y
Montageart:
SMD/SMT
Paket / Koffer:
FBGA-64
Serie:
S29GL256S
Speichergröße:
256 Mbit
Oberflächentyp:
Parallel
Organisation:
32 M x 8
Timing-Typ:
Asynchron
Datenbusbreite:
8 bit
Versorgungsspannung - Min.:
2.7 V
Versorgungsspannung - Max.:
3.6 V
Versorgungsstrom - Max.:
100 mA
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 85 C
Verpackung:
Tablett
Speichertyp:
NOCH
Geschwindigkeit:
110 ns
Die Architektur:
MirrorBit Eclipse
Marke:
Cypress Semiconductor
Feuchtigkeitsempfindlich:
ja
Produktart:
NOR-Blitz
Standard:
Common Flash-Schnittstelle (CFI)
Werkspackungsmenge:
180
Unterkategorie:
Speicher & Datenspeicherung
Tags
S29GL256S11F, S29GL256S11, S29GL256S1, S29GL256S, S29GL2, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ress Semiconductor SCT
Parallel NOR Flash Memory, 256 Mbit Density, 110 ns Initial Access Time, FBGA-64, RoHS
***ical
NOR Flash Parallel 3V/3.3V 256M-bit 16M x 16 110ns 64-Pin Fortified BGA Tray
***-Wing Technology
3A991.B.1.A Surface Mount Tray 16MX16 ic memory 110ns 13mm 0.0001A 256Mb
***ark
Tray Pkged / 256 Mbit, 3V, 110Ns, 64-Ball Fbga, Page Mode Flash Memory Featuring 65 Nm Mirrorbit Process Technology, Vio, Highest Address Sector Protected
***p One Stop
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 100ns 64-Pin Fortified BGA Tray
***ress Semiconductor SCT
Parallel NOR Flash Memory, 256 Mbit Density, 100 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
GL-P Series 256 Mb (32 M x 8) 3.6 V Surface Mount Mirrorbit® Flash - FBGA-64
***p One Stop
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray
***ress Semiconductor SCT
Parallel NOR Flash Memory, 256 Mbit Density, 110 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
GL-P Series 256 M (32 M x 8) 3.6 V 110 ns Surface Mount Flash Memory - FBGA-64
***nell
IC, MEMORY, FLASH, 256MBIT, FBGA-64; Memory Type:Flash - NOR; Memory Size:256Mbit; Memory Configuration:(Not Available); Supply Voltage Min:2.7V; Supply Voltage Max:3.6V; Memory Case Style:BGA; No. of Pins:64; Access Time:110ns; IC Interface Type:CFI; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2013)
***ical
NOR Flash Parallel 3V/3.3V 256Mbit 32M/16M x 8bit/16bit 110ns 64-Pin Fortified BGA Tray
***ress Semiconductor SCT
Parallel NOR Flash Memory, 256 Mbit Density, 110 ns Initial Access Time, FBGA-64, RoHS
***ure Electronics
GL-P Series 256 M (32 M x 8) 3.6 V 110 ns Surface Mount Flash Memory - FBGA-64
***ment14 APAC
IC, MEMORY, FLASH, 256M, 3V, 64FBGA; Memory Type:Flash - NOR; Memory Size:256MB; Memory Configuration:32M x 8, 16M x 16; Interface Type:CFI; Supply Voltage Range:2.7V to 3.6V; Memory Case Style:FBGA; No. of Pins:64; Operating Temperature Range:-40°C to +85°C; Access Time:110ns; Interface:Parallel; Memory Configuration:16M x 16b; Memory Type:Flash
Teil # Mfg. Beschreibung Aktie Preis
S29GL256S11FHIV10
DISTI # S29GL256S11FHIV10-ND		Cypress SemiconductorIC FLASH 256M PARALLEL 64BGA
RoHS: Compliant
Min Qty: 180
Container: Tray		Temporarily Out of Stock
  • 180:$5.4054
S29GL256S11FHIV10
DISTI # 727-S29GL256S11FHIV1		Cypress SemiconductorNOR Flash Nor
RoHS: Compliant		0
  • 1:$7.9200
  • 10:$7.2600
  • 25:$6.6000
  • 50:$6.2900
  • 100:$5.9400
  • 250:$5.4900
  • 500:$4.7800
  • 1000:$4.4600
Bild Teil # Beschreibung
S29GL256S10DHB023

Mfr.#: S29GL256S10DHB023

OMO.#: OMO-S29GL256S10DHB023

 NOR Flash Nor
S29GL256P11FFI023

Mfr.#: S29GL256P11FFI023

OMO.#: OMO-S29GL256P11FFI023

 NOR Flash 256M, 3V, 110ns Parallel NOR Flash
S29GL256S90DHSS43

Mfr.#: S29GL256S90DHSS43

OMO.#: OMO-S29GL256S90DHSS43

 NOR Flash Nor
S29GL256N11TFA023

Mfr.#: S29GL256N11TFA023

OMO.#: OMO-S29GL256N11TFA023

 NOR Flash Nor
S29GL256N11TFIV20

Mfr.#: S29GL256N11TFIV20

OMO.#: OMO-S29GL256N11TFIV20-CYPRESS-SEMICONDUCTOR

 IC GATE NOR
S29GL256S10TFV020

Mfr.#: S29GL256S10TFV020

OMO.#: OMO-S29GL256S10TFV020-CYPRESS-SEMICONDUCTOR

 Flash Memory 256 MBIT, 3V, 100NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, LOWEST ADDRESS SECTOR PROTECTED
S29GL256S90FHSS50

Mfr.#: S29GL256S90FHSS50

OMO.#: OMO-S29GL256S90FHSS50-CYPRESS-SEMICONDUCTOR

 IC FLASH 256M PARALLEL 64BGA GL-S
S29GL256S90DHSS13

Mfr.#: S29GL256S90DHSS13

OMO.#: OMO-S29GL256S90DHSS13-CYPRESS-SEMICONDUCTOR

 IC FLASH 256M PARALLEL 64BGA GL-S
S29GL25690TFA02

Mfr.#: S29GL25690TFA02

OMO.#: OMO-S29GL25690TFA02-1190

 Neu und Original
S29GL256N11FAA023

Mfr.#: S29GL256N11FAA023

OMO.#: OMO-S29GL256N11FAA023-1190

 Neu und Original
Verfügbarkeit
Aktie:
180
Auf Bestellung:
2163
Menge eingeben:
Der aktuelle Preis von S29GL256S11FHIV10 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
7,92 $
7,92 $
10
7,26 $
72,60 $
25
6,60 $
165,00 $
50
6,29 $
314,50 $
100
5,94 $
594,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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