OMO ElectronicOMO Electronic
Expand menu
Hallo, melde dich anMein Konto
0 Wagen

IRF6729MTR1PBF

IRF6729MTR1PBF
Mfr. #:
IRF6729MTR1PBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-CH 30V 31A DIRECTFET
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRF6729MTR1PBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF6729MTR1PBF DatasheetIRF6729MTR1PBF Datasheet (P4-P6)IRF6729MTR1PBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IRF6729, IRF672, IRF67, IRF6, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
A 30V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGE RATED AT 31
***ark
N Channel, MOSFET, 30V, 32A, DirectFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V ;RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 31A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:190A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:104W; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; SVHC:No SVHC (19-Dec-2011)
***ure Electronics
Single N-Channel 30 V 1.7 mOhm 74 nC HEXFET® Power Mosfet - DirectFET®
***ment14 APAC
MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:30V; On Resistance
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***ark
MOSET TRANSISTOR; Transistor Type:MOSFET; Continuous Drain Current, Id:32A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.00122ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V; Power Dissipation, Pd:2.8W ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 30V, 180A, DIRECTFET MX; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00122ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 89W; Transistor Case Style: DirectFET MX; No. of Pins: 7Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
*** Source Electronics
MOSFET N-CH 30V 32A DIRECTFET / Trans MOSFET N-CH Si 30V 32A 7-Pin Direct-FET MX T/R
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:25A; On Resistance, Rds(on):1.8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes optimized with low on resistance for applications such as active OR’ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number
***(Formerly Allied Electronics)
MOSFET, N-Ch, VDSS 30V, RDS(ON) 1.22 mOhm, ID 32A, DirectFET
***ment14 APAC
MOSFET, N, DIRECTFET MX; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Drain Source Voltage Vds:30V; On Resistance Rds(on):1.22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:MX; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:32A; Package / Case:MX; Power Dissipation Pd:2.8W; Pulse Current Idm:260A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1.35V
***ernational Rectifier
A 30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MT package rated at 32 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
***icroelectronics
N-channel 30 V, 0.0014 Ohm typ., 35 A STripFET(TM) V Power MOSFET in PowerFLAT(TM) 5x6 package
*** Source Electronics
Trans MOSFET N-CH 30V 195A 8-Pin Power Flat T/R / MOSFET N-CH 30V 35A POWERFLAT6X5
***ure Electronics
N-Channel 30 V 1.75 mOhm Surface Mount STripFET™ V MosFet - PowerFLAT 5x6
***ark
Mosfet, N Channel, 30V, 35A, Powerflat6X5; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35A; On Resistance Rds(On):0.0014Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10Vrohs Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IRF6729MTR1PBF
DISTI # IRF6729MTR1PBFTR-ND		Infineon Technologies AGMOSFET N-CH 30V 31A DIRECTFET
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRF6729MTR1PBF
    DISTI # IRF6729MTR1PBFCT-ND    		Infineon Technologies AGMOSFET N-CH 30V 31A DIRECTFET
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      IRF6729MTR1PBF
      DISTI # IRF6729MTR1PBFDKR-ND      		Infineon Technologies AGMOSFET N-CH 30V 31A DIRECTFET
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        IRF6729MTR1PBF
        DISTI # 70019203        		Infineon Technologies AGA 30V SINGLE N-CHANNEL HEXFET POWER MOSFET IN A DIRECTFET MX PACKAGE RATED AT 31
        RoHS: Compliant        		0
        • 1000:$2.9300
        • 2000:$2.8710
        • 5000:$2.7840
        • 10000:$2.6660
        • 25000:$2.4910
        IRF6729MTR1PBF
        DISTI # 942-IRF6729MTR1PBF        		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET DIRECTFET MX
        RoHS: Compliant        		0
          Bild Teil # Beschreibung
          IRF6729MTRPBF.

          Mfr.#: IRF6729MTRPBF.

          OMO.#: OMO-IRF6729MTRPBF--1190

          		 Neu und Original
          IRF6729MTR1PBF

          Mfr.#: IRF6729MTR1PBF

          OMO.#: OMO-IRF6729MTR1PBF-INFINEON-TECHNOLOGIES

          		 MOSFET N-CH 30V 31A DIRECTFET
          IRF6729MTRPBF

          Mfr.#: IRF6729MTRPBF

          OMO.#: OMO-IRF6729MTRPBF-INFINEON-TECHNOLOGIES

          		 MOSFET 30V 1 N-CH HEXFET DIRECTFET MX
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          3500
          Menge eingeben:
          Der aktuelle Preis von IRF6729MTR1PBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          0,00 $
          0,00 $
          10
          0,00 $
          0,00 $
          100
          0,00 $
          0,00 $
          500
          0,00 $
          0,00 $
          1000
          0,00 $
          0,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
          Beginnen mit
          Neueste Produkte
          More Newest Products
          Top