BSC050N03LSGATMA1

BSC050N03LSGATMA1
Mfr. #:
BSC050N03LSGATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC050N03LSGATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
80 A
Rds On - Drain-Source-Widerstand:
4.2 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
35 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
50 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
1.27 mm
Länge:
5.9 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Breite:
5.15 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
38 S
Abfallzeit:
3.6 ns
Produktart:
MOSFET
Anstiegszeit:
4 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
21 ns
Typische Einschaltverzögerungszeit:
5.2 ns
Teil # Aliase:
BSC050N03LS BSC5N3LSGXT G SP000269785
Gewichtseinheit:
0.004194 oz
Tags
BSC050N03LSGA, BSC050N03LSG, BSC050N03L, BSC050N03, BSC050N0, BSC050N, BSC050, BSC05, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 7.5 mOhm 17 nC OptiMOS™ Power Mosfet - TDSON-8
***ment14 APAC
MOSFET, N CH, 80A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Power Dissipation Pd:50W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V
***ineon SCT
Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications, PG-TDSON-8, RoHS
***ineon
With the new OptiMOS 30V product family, Infineon sets new standards in power density and energy efficiency for discrete power MOSFETs and system in package. | Summary of Features: Ultra low gate and output charge; Lowest on-state resistance in small footprint packages; Easy to design in | Benefits: Increased battery lifetime; Improved EMI behavior making external snubber networks obsolete; Saving costs; Saving space; Reducing power losses | Target Applications: Onboard charger; Notebook; Mainboard; DC-DC; VRD/VRM; Motor control; LED
Teil # Mfg. Beschreibung Aktie Preis
BSC050N03LSGATMA1
DISTI # V36:1790_06390903
Infineon Technologies AGTrans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 25000:$0.2332
  • 10000:$0.2591
  • 5000:$0.2633
BSC050N03LSGATMA1
DISTI # V72:2272_06390903
Infineon Technologies AGTrans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
RoHS: Compliant
4500
  • 3000:$0.2410
  • 1000:$0.2896
  • 500:$0.3484
  • 250:$0.3524
  • 100:$0.3564
  • 25:$0.4963
  • 10:$0.5026
  • 1:$0.5797
BSC050N03LSGATMA1
DISTI # BSC050N03LSGATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 30V 80A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
On Order
  • 5000:$0.3156
BSC050N03LSGATMA1
DISTI # BSC050N03LSGATMA1CT-ND
Infineon Technologies AGMOSFET N-CH 30V 80A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.3852
  • 500:$0.4815
  • 100:$0.6501
  • 10:$0.8430
  • 1:$0.9600
BSC050N03LSGATMA1
DISTI # BSC050N03LSGATMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 30V 80A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.3852
  • 500:$0.4815
  • 100:$0.6501
  • 10:$0.8430
  • 1:$0.9600
BSC050N03LSGATMA1
DISTI # 27516682
Infineon Technologies AGTrans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 5000:$0.2633
BSC050N03LSGATMA1
DISTI # 29517723
Infineon Technologies AGTrans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
RoHS: Compliant
4500
  • 250:$0.2668
  • 100:$0.3567
  • 30:$0.4968
BSC050N03LSGATMA1
DISTI # BSC050N03LSGATMA1
Infineon Technologies AGTrans MOSFET N-CH 30V 18A 8-Pin TDSON EP - Tape and Reel (Alt: BSC050N03LSGATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.2809
  • 10000:$0.2799
  • 20000:$0.2789
  • 30000:$0.2789
  • 50000:$0.2779
BSC050N03LSGATMA1
DISTI # 97Y1249
Infineon Technologies AGMOSFET, N-CH, 30V, 80A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0042ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes2210
  • 1:$0.8000
  • 10:$0.6590
  • 25:$0.5810
  • 50:$0.5030
  • 100:$0.4250
  • 250:$0.3970
  • 500:$0.3680
  • 1000:$0.3400
BSC050N03LSGXT
DISTI # 726-BSC050N03LSGXT
Infineon Technologies AGMOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
RoHS: Compliant
4810
  • 1:$0.8300
  • 10:$0.6890
  • 100:$0.4440
  • 1000:$0.3560
BSC050N03LSGATMA1
DISTI # 726-BSC050N03LSGATMA
Infineon Technologies AGMOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
RoHS: Compliant
0
  • 1:$0.8000
  • 10:$0.6590
  • 100:$0.4250
  • 1000:$0.3400
BSC050N03LS G
DISTI # 726-BSC050N03LSG
Infineon Technologies AGMOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
RoHS: Compliant
0
  • 1:$0.8100
  • 10:$0.6800
  • 100:$0.4400
  • 1000:$0.3500
BSC050N03LSGATMA1Infineon Technologies AGSingle N-Channel 30 V 7.5 mOhm 17 nC OptiMOS Power Mosfet - TDSON-8
RoHS: Not Compliant
5000Reel
  • 5000:$0.2600
BSC050N03LSGATMA1Infineon Technologies AGPower Field-Effect Transistor, 18A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RoHS: Compliant
750
  • 1000:$0.2900
  • 500:$0.3100
  • 100:$0.3200
  • 25:$0.3300
  • 1:$0.3600
BSC050N03LSGATMA1
DISTI # 1702271
Infineon Technologies AGMOSFET N-CH 30V 80A 5M OPTIMOS3 TDSON8, RL9400
  • 5000:£0.2300
  • 10000:£0.2180
  • 15000:£0.2110
BSC050N03LSGATMA1
DISTI # 2617471
Infineon Technologies AGMOSFET, N-CH, 30V, 80A, PG-TDSON-8
RoHS: Compliant
2175
  • 5:£0.5200
  • 25:£0.4240
  • 100:£0.3270
  • 250:£0.3050
  • 500:£0.2820
BSC050N03LSGATMA1
DISTI # C1S322000464386
Infineon Technologies AGTrans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
RoHS: Compliant
10000
  • 10000:$0.2590
  • 5000:$0.2596
BSC050N03LSGATMA1
DISTI # 2617471
Infineon Technologies AGMOSFET, N-CH, 30V, 80A, PG-TDSON-8
RoHS: Compliant
2210
  • 1:$1.5400
  • 10:$1.3500
  • 100:$1.0400
  • 500:$0.7680
  • 1000:$0.6150
BSC050N03LSGATMA1
DISTI # 1775445
Infineon Technologies AGMOSFET, N CH, 80A, 30V, PG-TDSON-8
RoHS: Compliant
0
  • 1:$1.2900
  • 10:$1.0800
  • 100:$0.6970
  • 1000:$0.5540
  • 5000:$0.4980
Bild Teil # Beschreibung
SSM6K217FE,LF

Mfr.#: SSM6K217FE,LF

OMO.#: OMO-SSM6K217FE-LF

MOSFET Small Signal MOSFET
TPS54327DRCR

Mfr.#: TPS54327DRCR

OMO.#: OMO-TPS54327DRCR

Switching Voltage Regulators 4.5-18Vin,3A Sync SD DCAP Mode Cnvrtr
NUCLEO-F429ZI

Mfr.#: NUCLEO-F429ZI

OMO.#: OMO-NUCLEO-F429ZI

Development Boards & Kits - ARM STM32 Nucleo-144 development board with STM32F429ZI MCU, supports Arduino, ST Zio and morpho connectivity
NUCLEO-F746ZG

Mfr.#: NUCLEO-F746ZG

OMO.#: OMO-NUCLEO-F746ZG

Development Boards & Kits - ARM STM32 Nucleo-144 development board with STM32F746ZG MCU, supports Arduino, ST Zio and morpho connectivity
NUCLEO-F767ZI

Mfr.#: NUCLEO-F767ZI

OMO.#: OMO-NUCLEO-F767ZI

Development Boards & Kits - ARM STM32 Nucleo-144 development board with STM32F767ZI MCU, supports Arduino, ST Zio and morpho connectivity
BLED112-V1

Mfr.#: BLED112-V1

OMO.#: OMO-BLED112-V1

Bluetooth Modules (802.15.1) Bluegiga BLED112 Bluetooth Low Energy USB Dongle ready for Linux, Android and Windows devices BLE 4.
MS560702BA03-50

Mfr.#: MS560702BA03-50

OMO.#: OMO-MS560702BA03-50

Board Mount Pressure Sensors Alt-Baro press sens 3x5x1mm 24bit T&R
DF13EA-40DP-1.25V(51)

Mfr.#: DF13EA-40DP-1.25V(51)

OMO.#: OMO-DF13EA-40DP-1-25V-51--HIROSE

Neu und Original
SFH 4725S

Mfr.#: SFH 4725S

OMO.#: OMO-SFH-4725S-OSRAM-OPTO-SEMICONDUCTORS

Infrared Emitters - High Power Infrared 940nm OSLON Black
DF13EA-30DP-1.25V(51)

Mfr.#: DF13EA-30DP-1.25V(51)

OMO.#: OMO-DF13EA-30DP-1-25V-51--HIROSE

Headers & Wire Housings 1.25 DR SRT PIN HDR 30P SMT GLD W/O BOSS
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1992
Menge eingeben:
Der aktuelle Preis von BSC050N03LSGATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,79 $
0,79 $
10
0,66 $
6,59 $
100
0,42 $
42,50 $
1000
0,34 $
340,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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