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IPN60R360P7SATMA1

IPN60R360P7SATMA1
Mfr. #:
IPN60R360P7SATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET CONSUMER
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPN60R360P7SATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPN60R360P7SATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-SOT-223-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
600 V
Id - Kontinuierlicher Drainstrom:
9 A
Rds On - Drain-Source-Widerstand:
300 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
13 nC
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
7 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
CoolMOS
Verpackung:
Spule
Serie:
CoolMOS P7
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Abfallzeit:
10 ns
Produktart:
MOSFET
Anstiegszeit:
7 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
42 ns
Typische Einschaltverzögerungszeit:
8 ns
Teil # Aliase:
IPN60R360P7S SP001681928
Tags
IPN60R36, IPN60R3, IPN60, IPN6, IPN
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 600 V 360 mOhm 13 nC CoolMOS™ Power Mosfet - SOT-223
***i-Key
MOSFET N-CHANNEL 600V 9A SOT223
***ical
Trans MOSFET N-CH 600V 9A T/R
***ronik
N-CH 600V 9A 300mOhm SOT-223
***ark
Mosfet, N-Ch, 600V, 9A, 7W, Sot-223; Transistor Polarity:n Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(On):0.3Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 600V, 9A, 7W, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V; Power Dissipation Pd:7W; Transistor Case Style:SOT-223; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS P7 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET CAN N, 600V, 9A, 7W, SOT-223; Polarità Transistor:Canale N; Corrente Continua di Drain Id:9A; Tensione Drain Source Vds:600V; Resistenza di Attivazione Rds(on):0.3ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3.5V; Dissipazione di Potenza Pd:7W; Modello Case Transistor:SOT-223; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS P7 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Teil # Mfg. Beschreibung Aktie Preis
IPN60R360P7SATMA1
DISTI # 33259294		Infineon Technologies AGTrans MOSFET N-CH 600V 9A 3-Pin(2+Tab) SOT-223 T/R3000
  • 3000:$0.4257
IPN60R360P7SATMA1
DISTI # IPN60R360P7SATMA1CT-ND		Infineon Technologies AGMOSFET N-CHANNEL 600V 9A SOT223
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		2875In Stock
  • 1000:$0.4416
  • 500:$0.5593
  • 100:$0.6771
  • 10:$0.8680
  • 1:$0.9700
IPN60R360P7SATMA1
DISTI # IPN60R360P7SATMA1DKR-ND		Infineon Technologies AGMOSFET N-CHANNEL 600V 9A SOT223
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		2875In Stock
  • 1000:$0.4416
  • 500:$0.5593
  • 100:$0.6771
  • 10:$0.8680
  • 1:$0.9700
IPN60R360P7SATMA1
DISTI # IPN60R360P7SATMA1TR-ND		Infineon Technologies AGMOSFET N-CHANNEL 600V 9A SOT223
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 6000:$0.3811
  • 3000:$0.4001
IPN60R360P7SATMA1
DISTI # V36:1790_18204912		Infineon Technologies AGTrans MOSFET N-CH 600V 9A 3-Pin(2+Tab) SOT-223 T/R0
    IPN60R360P7SATMA1
    DISTI # IPN60R360P7SATMA1    		Infineon Technologies AGCONSUMER - Tape and Reel (Alt: IPN60R360P7SATMA1)
    RoHS: Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.3449
    • 18000:$0.3519
    • 12000:$0.3639
    • 6000:$0.3779
    • 3000:$0.3919
    IPN60R360P7SATMA1
    DISTI # 93AC7118    		Infineon Technologies AGMOSFET, N-CH, 600V, 9A, 7W, SOT-223,Transistor Polarity:N Channel,Continuous Drain Current Id:9A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.3ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes3000
    • 1000:$0.4130
    • 500:$0.5230
    • 250:$0.5580
    • 100:$0.5920
    • 50:$0.6510
    • 25:$0.7110
    • 10:$0.7710
    • 1:$0.8990
    IPN60R360P7SATMA1
    DISTI # 726-IPN60R360P7SATMA    		Infineon Technologies AGMOSFET CONSUMER
    RoHS: Compliant    		4778
    • 1:$0.8900
    • 10:$0.7630
    • 100:$0.5860
    • 500:$0.5180
    • 1000:$0.4090
    • 3000:$0.3630
    • 9000:$0.3490
    IPN60R360P7SATMA1
    DISTI # 2986470    		Infineon Technologies AGMOSFET, N-CH, 600V, 9A, 7W, SOT-223
    RoHS: Compliant    		3000
    • 1000:$0.5450
    • 500:$0.6280
    • 250:$0.6840
    • 100:$0.7380
    • 25:$1.0600
    • 5:$1.1700
    IPN60R360P7SATMA1
    DISTI # 2986470    		Infineon Technologies AGMOSFET, N-CH, 600V, 9A, 7W, SOT-2233000
    • 500:£0.3790
    • 250:£0.4040
    • 100:£0.4290
    • 25:£0.5620
    • 5:£0.6260
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    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1987
    Menge eingeben:
    Der aktuelle Preis von IPN60R360P7SATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,89 $
    0,89 $
    10
    0,76 $
    7,63 $
    100
    0,59 $
    58,60 $
    500
    0,52 $
    259,00 $
    1000
    0,41 $
    409,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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