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PSMN1R5-30BLE

PSMN1R5-30BLE
Mfr. #:
PSMN1R5-30BLE
Hersteller:
NXP Semiconductors
Beschreibung:
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
PSMN1R5-30BLE Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
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ECAD Model:
Produkteigenschaft
Attributwert
Hersteller
NXP Semiconductors
Produktkategorie
FETs - Einzeln
Serie
-
Verpackung
Digi-ReelR Alternative Verpackung
Gewichtseinheit
0.139332 oz
Montageart
SMD/SMT
Paket-Koffer
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Technologie
Si
Betriebstemperatur
-55°C ~ 175°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
D2PAK
Aufbau
Single
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
401W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
30V
Eingangskapazität-Ciss-Vds
14934pF @ 15V
FET-Funktion
Logik-Level-Gate
Strom-Dauer-Drain-Id-25°C
120A (Tc)
Rds-On-Max-Id-Vgs
1.5 mOhm @ 25A, 10V
Vgs-th-Max-Id
2.15V @ 1mA
Gate-Lade-Qg-Vgs
228nC @ 10V
Pd-Verlustleistung
401 W
Maximale-Betriebstemperatur
+ 175 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
99.2 ns
Anstiegszeit
156.1 ns
Vgs-Gate-Source-Spannung
20 V
ID-Dauer-Drain-Strom
120 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Vgs-th-Gate-Source-Threshold-Voltage
1.7 V
Rds-On-Drain-Source-Widerstand
1.3 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
191.8 ns
Typische-Einschaltverzögerungszeit
100.6 ns
Qg-Gate-Ladung
228 nC
Kanal-Modus
Erweiterung
Tags
PSMN1R5-30B, PSMN1R5-3, PSMN1R5, PSMN1R, PSMN1, PSMN, PSM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET Transistor, N Channel, 120 A, 30 V, 0.0013 ohm, 10 V, 1.7 V
***ment14 APAC
MOSFET, N-CH, 30V, 120A, D2PAK
***nell
MOSFET, N-CH, 30V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0013ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:401W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
Teil # Mfg. Beschreibung Aktie Preis
PSMN1R5-30BLEJ
DISTI # V36:1790_06540853		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
  • 4800000:$1.2010
  • 2400000:$1.2030
  • 480000:$1.3750
  • 48000:$1.6630
  • 4800:$1.7110
PSMN1R5-30BLEJ
DISTI # V72:2272_06540853		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R0
    PSMN1R5-30BLEJ
    DISTI # 1727-1101-1-ND    		NexperiaMOSFET N-CH 30V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		254In Stock
    • 100:$2.0996
    • 10:$2.6120
    • 1:$2.9100
    PSMN1R5-30BLEJ
    DISTI # 1727-1101-6-ND    		NexperiaMOSFET N-CH 30V 120A D2PAK
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		254In Stock
    • 100:$2.0996
    • 10:$2.6120
    • 1:$2.9100
    PSMN1R5-30BLEJ
    DISTI # 1727-1101-2-ND    		NexperiaMOSFET N-CH 30V 120A D2PAK
    RoHS: Compliant
    Min Qty: 800
    Container: Tape & Reel (TR)    		On Order
    • 2400:$1.3708
    • 1600:$1.4430
    • 800:$1.7110
    PSMN1R5-30BLEJ118
    DISTI # PSMN1R5-30BLEJ,118    		Avnet, Inc.MOS Power Transistors LV (< 200V) (Alt: PSMN1R5-30BLEJ,118)
    RoHS: Compliant
    Min Qty: 800    		Europe - 100
    • 8000:€1.1900
    • 4800:€1.2900
    • 1600:€1.3900
    • 3200:€1.3900
    • 800:€1.4900
    PSMN1R5-30BLEJ
    DISTI # PSMN1R5-30BLEJ    		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: PSMN1R5-30BLEJ)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel    		Europe - 0
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 4800
      Container: Reel      		Americas - 0
      • 48000:$1.2418
      • 24000:$1.2725
      • 14400:$1.3047
      • 9600:$1.3386
      • 4800:$1.3562
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 4800
      Container: Tape and Reel      		Asia - 0
      • 240000:$1.2884
      • 120000:$1.3214
      • 48000:$1.3386
      • 24000:$1.3562
      • 14400:$1.3928
      • 9600:$1.4315
      • 4800:$1.4724
      PSMN1R5-30BLEJ
      DISTI # PSMN1R5-30BLEJ      		NexperiaTrans MOSFET N-CH 30V 120A 3-Pin(2+Tab) D2PAK T/R - Cut TR (SOS) (Alt: PSMN1R5-30BLEJ)
      RoHS: Compliant
      Min Qty: 1
      Container: Cut Tape      		Americas - 0
        PSMN1R5-30BLE118
        DISTI # PSMN1R5-30BLE118        		Avnet, Inc.- Bulk (Alt: PSMN1R5-30BLE118)
        Min Qty: 250
        Container: Bulk        		Americas - 0
        • 500:$1.1900
        • 750:$1.1900
        • 1250:$1.1900
        • 2500:$1.1900
        • 250:$1.2900
        PSMN1R5-30BLEJ.
        DISTI # 23AC9025        		NexperiaTransistor Polarity:N Channel,Continuous Drain Current Id:120A,Drain Source Voltage Vds:30V,On Resistance Rds(on):1.5mohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:401W,No. of Pins:3Pins0
        • 48000:$1.2500
        • 24000:$1.2800
        • 14400:$1.3100
        • 9600:$1.3400
        • 1:$1.3600
        PSMN1R5-30BLEJ
        DISTI # 771-PSMN1R5-30BLEJ        		NexperiaMOSFET N-channel 30 V 1.5 mo FET
        RoHS: Compliant        		3261
        • 1:$2.7200
        • 10:$2.3100
        • 100:$2.0100
        • 250:$1.9000
        • 500:$1.7100
        • 800:$1.4400
        • 2400:$1.3700
        • 4800:$1.3200
        PSMN1R5-30BLE118NXP SemiconductorsNow Nexperia PSMN1R5-30BLE - Power Field-Effect Transistor, 120A I(D), 30V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK
        RoHS: Not Compliant        		2941
        • 1000:$1.3200
        • 500:$1.3900
        • 100:$1.4400
        • 25:$1.5000
        • 1:$1.6200
        PSMN1R5-30BLEJ
        DISTI # 2281225        		NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant        		0
        • 2500:$2.0900
        • 1000:$2.2000
        • 500:$2.3100
        • 250:$2.4300
        • 100:$2.5800
        • 25:$2.8000
        • 10:$3.1300
        • 1:$3.4600
        PSMN1R5-30BLEJ
        DISTI # 2281225        		NexperiaMOSFET, N-CH, 30V, 120A, D2PAK
        RoHS: Compliant        		0
        • 500:£1.1100
        • 250:£1.4600
        • 100:£1.5600
        • 10:£1.7800
        • 1:£2.3700
        Bild Teil # Beschreibung
        PSMN1R0-30YLC,115

        Mfr.#: PSMN1R0-30YLC,115

        OMO.#: OMO-PSMN1R0-30YLC-115

        		 MOSFET N-CH 30 V 1.15 mOhms LOGIC LEVEL MOSFET
        PSMN1R5-30YLC,115

        Mfr.#: PSMN1R5-30YLC,115

        OMO.#: OMO-PSMN1R5-30YLC-115

        		 MOSFET N-Ch 30V 1.55mOhms
        PSMN1R5-30YL,115

        Mfr.#: PSMN1R5-30YL,115

        OMO.#: OMO-PSMN1R5-30YL-115

        		 MOSFET N-CHAN 30V 100A
        PSMN1R3-30YL,115

        Mfr.#: PSMN1R3-30YL,115

        OMO.#: OMO-PSMN1R3-30YL-115

        		 MOSFET N-CH 30V 1.3 mOhm Logic Level MOSFET
        PSMN1R5-40PS,127

        Mfr.#: PSMN1R5-40PS,127

        OMO.#: OMO-PSMN1R5-40PS-127

        		 MOSFET N-Ch 40V 1.6 mOhms
        PSMN1R3-30YL115

        Mfr.#: PSMN1R3-30YL115

        OMO.#: OMO-PSMN1R3-30YL115-1190

        		 Neu und Original
        PSMN1R4-30YLDX

        Mfr.#: PSMN1R4-30YLDX

        OMO.#: OMO-PSMN1R4-30YLDX-NEXPERIA

        		 MOSFET N-CH 30V 100A LFPAK
        PSMN1R8-30BL,118

        Mfr.#: PSMN1R8-30BL,118

        OMO.#: OMO-PSMN1R8-30BL-118-NEXPERIA

        		 RF Bipolar Transistors MOSFET Std N-chanMOSFET
        PSMN1R8-30BL118

        Mfr.#: PSMN1R8-30BL118

        OMO.#: OMO-PSMN1R8-30BL118-1190

        		 Now Nexperia PSMN1R8-30BL - Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        PSMN1R7-25YLDX

        Mfr.#: PSMN1R7-25YLDX

        OMO.#: OMO-PSMN1R7-25YLDX-NEXPERIA

        		 PSMN1R7-25YLD/LFPAK/REEL 7 Q1
        Verfügbarkeit
        Aktie:
        Available
        Auf Bestellung:
        4000
        Menge eingeben:
        Der aktuelle Preis von PSMN1R5-30BLE dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
        Referenzpreis (USD)
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        Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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