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FS100R12PT4

FS100R12PT4
Mfr. #:
FS100R12PT4
Hersteller:
Infineon Technologies
Beschreibung:
IGBT Modules 3 PHASE POWER BRIDGE
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FS100R12PT4 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
IGBT-Module
RoHS:
Y
Produkt:
IGBT Silizium Module
Kollektor- Emitterspannung VCEO Max:
1200 V
Kollektor-Emitter-Sättigungsspannung:
2.15 V
Kontinuierlicher Kollektorstrom bei 25 C:
135 A
Gate-Emitter-Leckstrom:
100 nA
Pd - Verlustleistung:
500 W
Minimale Betriebstemperatur:
- 40 C
Maximale Betriebstemperatur:
+ 150 C
Verpackung:
Tablett
Marke:
Infineon-Technologien
Montageart:
Chassishalterung
Maximale Gate-Emitter-Spannung:
20 V
Produktart:
IGBT-Module
Werkspackungsmenge:
6
Unterkategorie:
IGBTs
Handelsname:
TRENCHSTOP
Teil # Aliase:
FS100R12PT4BOSA1 SP000485594
Gewichtseinheit:
13.580475 oz
Tags
FS100R12P, FS100R12, FS100R1, FS100R, FS100, FS10, FS1
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans IGBT Module N-CH 1.2KV 135A 19-Pin
***ment14 APAC
IGBT, POW, QUAD W NTC, 1200V, 100A; Module Configuration:Six; Transistor Polarity:N Channel; DC Collector Current:100A; Collector Emitter Voltage Vces:1.75V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:Module; No. of Pins:20; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:500W
***ineon
EconoPACK 4 1200V sixpack IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode, NTC and PressFIT Contact Technology | Summary of Features: Extended Operation Temperature T(vj op); Low Switching Losses; Low V(CEsat); V(CEsat) with positive Temperature Coefficient; Isolated Base Plate; Standard Housing | Benefits: Compact Modules; Easy and most reliable assembly; No Plugs and Cables required; Ideal for Low Inductive System Designs | Target Applications: drives; solar; cav; ups
Teil # Mfg. Beschreibung Aktie Preis
FS100R12PT4BOSA1
DISTI # FS100R12PT4BOSA1-ND		Infineon Technologies AGIGBT MODULE VCES 600V 100A
RoHS: Not compliant
Min Qty: 6
Container: Bulk		Temporarily Out of Stock
  • 6:$142.1867
FS100R12PT4
DISTI # SP000485594		Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 135A 19-Pin (Alt: SP000485594)
RoHS: Compliant
Min Qty: 1		Europe - 3
  • 1:€170.5900
  • 10:€137.8900
  • 25:€125.2900
  • 50:€121.0900
  • 100:€117.0900
  • 500:€113.6900
  • 1000:€111.0900
FS100R12PT4BOSA1
DISTI # FS100R12PT4BOSA1		Infineon Technologies AGMEDIUM POWER ECONO - Trays (Alt: FS100R12PT4BOSA1)
RoHS: Compliant
Min Qty: 6
Container: Tray		Americas - 18
  • 6:$128.9900
  • 12:$125.4900
  • 24:$122.2900
  • 36:$119.1900
  • 60:$116.1900
FS100R12PT4
DISTI # SP000485594		Infineon Technologies AGTrans IGBT Module N-CH 1.2KV 135A 19-Pin (Alt: SP000485594)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€145.4900
  • 10:€133.3900
  • 25:€127.9900
  • 50:€123.0900
  • 100:€118.5900
  • 500:€114.2900
  • 1000:€106.6900
FS100R12PT4
DISTI # 84R7213		Infineon Technologies AGIGBT Module,Transistor Polarity:N Channel,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:20Pins,Product Range:- RoHS Compliant: Yes0
    FS100R12PT4Infineon Technologies AGInsulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant    		1611
    • 1000:$113.7000
    • 500:$119.6800
    • 100:$124.6000
    • 25:$129.9400
    • 1:$139.9400
    FS100R12PT4BOSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 135A I(C), 1200V V(BR)CES, N-Channel
    RoHS: Compliant    		1
    • 1000:$113.7000
    • 500:$119.6800
    • 100:$124.6000
    • 25:$129.9400
    • 1:$139.9400
    FS100R12PT4
    DISTI # 726-FS100R12PT4    		Infineon Technologies AGIGBT Modules 3 PHASE POWER BRIDGE
    RoHS: Compliant    		4
    • 1:$144.1100
    • 5:$141.2800
    • 10:$134.6900
    • 25:$131.8700
    Bild Teil # Beschreibung
    R25-1001502

    Mfr.#: R25-1001502

    OMO.#: OMO-R25-1001502-HARWIN

    		 Standoffs & Spacers M2.5 x 15mm HEX BRASS 5mm A/F
    HKL

    Mfr.#: HKL

    OMO.#: OMO-HKL-731

    		 Fuse Holder Panel Mount Neon Indicating 15A
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1987
    Menge eingeben:
    Der aktuelle Preis von FS100R12PT4 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    144,11 $
    144,11 $
    5
    141,28 $
    706,40 $
    10
    134,69 $
    1 346,90 $
    25
    131,87 $
    3 296,75 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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