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IPB039N10N3 G

IPB039N10N3 G
Mfr. #:
IPB039N10N3 G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB039N10N3 G Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB039N10N3 G Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TO-263-7
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
160 A
Rds On - Drain-Source-Widerstand:
3.9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
88 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
214 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
OptiMOS 3
Transistortyp:
1 N-Channel
Typ:
OptiMOS 3 Power-Transistor
Breite:
9.25 mm
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
76 S
Abfallzeit:
14 ns
Produktart:
MOSFET
Anstiegszeit:
59 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
48 ns
Typische Einschaltverzögerungszeit:
27 ns
Teil # Aliase:
IPB039N10N3GATMA1 IPB39N1N3GXT SP000482428
Gewichtseinheit:
0.056438 oz
Tags
IPB039N1, IPB039, IPB03, IPB0, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
CoolMOS™ N-Channel MOSFETs
Infineon CoolMOS™ N-Channel Power MOSFETs set the standard for high performance and energy efficiency. The Infineon OptiMOS low voltage MOSFET family demonstrates a combination of the industry's lowest on-state resistance and best switching performance in the voltage range from 20V up to 250V. The new OptiMOS 25V and 30V product family sets new standards in power density and energy efficiency for discrete power MOSFETs. These devices are application-specific optimized for power supplies of servers, notebooks, telecom / datacom switches, and more. The revolutionary Infineon CoolMOS power family sets new standards in energy efficiency and is a technology leader in high voltage MOSFETs. The CoolMOS offers a significant reduction of conduction and switching losses and enables high power density and efficiency for superior power conversion systems. CoolMOS C6 / E6 Power MOSFETs combine the advantage of state-of-the-art superjunction devices with the strengths of conventional power semiconductors. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB039N10N3GE8187ATMA1
DISTI # V36:1790_06377394		Infineon Technologies AGN-KANAL POWER MOS0
    IPB039N10N3GATMA1
    DISTI # V36:1790_06377391    		Infineon Technologies AGTrans MOSFET N-CH 100V 160A Automotive 7-Pin(6+Tab) D2PAK T/R
    RoHS: Compliant    		0
      IPB039N10N3GATMA1
      DISTI # V72:2272_06377391      		Infineon Technologies AGTrans MOSFET N-CH 100V 160A Automotive 7-Pin(6+Tab) D2PAK T/R
      RoHS: Compliant      		0
        IPB039N10N3GATMA1
        DISTI # IPB039N10N3GATMA1TR-ND        		Infineon Technologies AGMOSFET N-CH 100V 160A TO263-7
        RoHS: Compliant
        Min Qty: 1000
        Container: Tape & Reel (TR)        		On Order
        • 5000:$1.2870
        • 2000:$1.3365
        • 1000:$1.4355
        IPB039N10N3GATMA1
        DISTI # IPB039N10N3GATMA1CT-ND        		Infineon Technologies AGMOSFET N-CH 100V 160A TO263-7
        RoHS: Compliant
        Min Qty: 1
        Container: Cut Tape (CT)        		Temporarily Out of Stock
        • 500:$1.7845
        • 100:$2.1720
        • 10:$2.7020
        • 1:$3.0100
        IPB039N10N3GATMA1
        DISTI # IPB039N10N3GATMA1DKR-ND        		Infineon Technologies AGMOSFET N-CH 100V 160A TO263-7
        RoHS: Compliant
        Min Qty: 1
        Container: Digi-Reel®        		Temporarily Out of Stock
        • 500:$1.7845
        • 100:$2.1720
        • 10:$2.7020
        • 1:$3.0100
        IPB039N10N3GE8187ATMA1
        DISTI # IPB039N10N3GE8187ATMA1TR-ND        		Infineon Technologies AGMOSFET N-CH 100V 160A TO263-7
        RoHS: Compliant
        Min Qty: 1000
        Container: Tape & Reel (TR)        		Temporarily Out of Stock
        • 1000:$1.6737
        IPB039N10N3 G
        DISTI # IPB039N10N3 G        		Infineon Technologies AGTrans MOSFET N-CH 100V 160A 7-Pin TO-263 T/R (Alt: IPB039N10N3 G)
        RoHS: Compliant
        Min Qty: 1000
        Container: Tape and Reel        		Asia - 0
          IPB039N10N3 G
          DISTI # IPB039N10N3G          		Infineon Technologies AGTrans MOSFET N-CH 100V 160A 7-Pin TO-263 T/R - Bulk (Alt: IPB039N10N3G)
          RoHS: Compliant
          Min Qty: 278
          Container: Bulk          		Americas - 0
          • 1390:$1.0900
          • 2780:$1.0900
          • 278:$1.1900
          • 556:$1.1900
          • 834:$1.1900
          IPB039N10N3 G
          DISTI # SP000482428          		Infineon Technologies AGTrans MOSFET N-CH 100V 160A 7-Pin TO-263 T/R (Alt: SP000482428)
          RoHS: Compliant
          Min Qty: 1000
          Container: Tape and Reel          		Europe - 0
          • 10000:€0.9129
          • 6000:€0.9499
          • 4000:€0.9799
          • 2000:€1.0559
          • 1000:€1.3599
          IPB039N10N3GXT
          DISTI # IPB039N10N3GATMA1          		Infineon Technologies AGTrans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1)
          RoHS: Compliant
          Min Qty: 1000
          Container: Reel          		Americas - 0
          • 10000:$0.9139
          • 6000:$0.9309
          • 4000:$0.9629
          • 2000:$0.9999
          • 1000:$1.0369
          IPB039N10N3GE8197ATMA1
          DISTI # IPB039N10N3GE8197ATMA1          		Infineon Technologies AG- Bulk (Alt: IPB039N10N3GE8197ATMA1)
          Min Qty: 253
          Container: Bulk          		Americas - 0
          • 1265:$1.1900
          • 2530:$1.1900
          • 506:$1.2900
          • 759:$1.2900
          • 253:$1.3900
          IPB039N10N3GE8187ATMA1
          DISTI # IPB039N10N3GE8187ATMA1          		Infineon Technologies AGTrans MOSFET N-CH 100V 160A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GE8187ATMA1)
          RoHS: Compliant
          Min Qty: 1000
          Container: Reel          		Americas - 0
            IPB039N10N3GATMA1
            DISTI # 47W3465            		Infineon Technologies AGMOSFET, N CHANNEL, 100V, 160A, TO263-7,Transistor Polarity:N Channel,Continuous Drain Current Id:160A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0033ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.7V RoHS Compliant: Yes0
            • 500:$1.5900
            • 100:$1.8200
            • 10:$2.2700
            • 1:$2.6700
            IPB039N10N3 G
            DISTI # 726-IPB039N10N3G            		Infineon Technologies AGMOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
            RoHS: Compliant            		112
            • 1:$2.6400
            • 10:$2.2500
            • 100:$1.8000
            • 500:$1.5700
            • 1000:$1.3000
            • 2000:$1.2100
            • 5000:$1.1700
            IPB039N10N3GATMA1
            DISTI # 726-IPB039N10N3GATMA            		Infineon Technologies AGMOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3
            RoHS: Compliant            		0
            • 1:$2.6400
            • 10:$2.2500
            • 100:$1.8000
            • 500:$1.5700
            • 1000:$1.3000
            • 2000:$1.2100
            • 5000:$1.1700
            IPB039N10N3GE8187ATMA1
            DISTI # 726-IPB039N10N3GE818            		Infineon Technologies AGMOSFET MV POWER MOS
            RoHS: Compliant            		0
            • 1:$2.8800
            • 10:$2.4500
            • 100:$2.1200
            • 250:$2.0200
            • 500:$1.8100
            • 1000:$1.5300
            • 2000:$1.4500
            • 5000:$1.4000
            IPB039N10N3GInfineon Technologies AGPower Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA
            RoHS: Compliant            		4
            • 1000:$1.1800
            • 500:$1.2500
            • 100:$1.3000
            • 25:$1.3500
            • 1:$1.4600
            IPB039N10N3GE8197ATMA1Infineon Technologies AG 
            RoHS: Not Compliant            		3
            • 1000:$1.3000
            • 500:$1.3700
            • 100:$1.4300
            • 25:$1.4900
            • 1:$1.6000
            IPB039N10N3GInfineon Technologies AG 243
              IPB039N10N3GInfineon Technologies AG*** FREE SHIPPING ORDERS OVER $100 *** 160 A, 100 V, 0.0039 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263AA16
              • 17:$4.3000
              • 6:$4.7300
              • 1:$6.4500
              IPB039N10N3 G  129
                IPB039N10N3GATMA1
                DISTI # IPB039N10N3GATMA1                		Infineon Technologies AGTransistor: N-MOSFET,unipolar,100V,160A,214W,PG-TO263-758
                • 1:$1.8047
                • 3:$1.6242
                • 10:$1.4325
                • 100:$1.2407
                • 1000:$1.1618
                IPB039N10N3GATMA1
                DISTI # 2212838                		Infineon Technologies AGMOSFET, N-CH, 100V, 160A, TO263-7
                RoHS: Compliant                		0
                • 2000:$1.8600
                • 1000:$2.0000
                • 500:$2.4200
                • 100:$2.7700
                • 10:$3.4600
                • 1:$4.0600
                IPB039N10N3GATMA1
                DISTI # 2212838                		Infineon Technologies AGMOSFET, N-CH, 100V, 160A, TO263-70
                • 500:£1.2200
                • 250:£1.3100
                • 100:£1.3900
                • 10:£1.7500
                • 1:£2.3200
                IPB039N10N3GInfineon Technologies AG100V,160A,N Channel Power MOSFET39
                • 1:$2.0800
                • 100:$1.7400
                • 500:$1.5300
                • 1000:$1.4900
                IPB039N10N3 GInfineon Technologies AGRoHS(ship within 1day)20
                • 1:$4.2400
                • 10:$3.1800
                • 50:$2.8000
                • 100:$2.3900
                • 500:$2.2300
                • 1000:$2.1500
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                Verfügbarkeit
                Aktie:
                Available
                Auf Bestellung:
                1985
                Menge eingeben:
                Der aktuelle Preis von IPB039N10N3 G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
                Referenzpreis (USD)
                Menge
                Stückpreis
                ext. Preis
                1
                2,64 $
                2,64 $
                10
                2,25 $
                22,50 $
                100
                1,80 $
                180,00 $
                500
                1,57 $
                785,00 $
                Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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