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IRFZ44ZLPBF

IRFZ44ZLPBF
Mfr. #:
IRFZ44ZLPBF
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET MOSFT 55V 51A 13.9mOhm 29nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFZ44ZLPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFZ44ZLPBF DatasheetIRFZ44ZLPBF Datasheet (P4-P6)IRFZ44ZLPBF Datasheet (P7-P9)IRFZ44ZLPBF Datasheet (P10-P12)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-262-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
55 V
Id - Kontinuierlicher Drainstrom:
51 A
Rds On - Drain-Source-Widerstand:
13.9 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
29 nC
Pd - Verlustleistung:
80 W
Aufbau:
Single
Verpackung:
Rohr
Höhe:
9.45 mm
Länge:
10.2 mm
Transistortyp:
1 N-Channel
Breite:
4.5 mm
Marke:
Infineon-Technologien
Produktart:
MOSFET
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001571852
Gewichtseinheit:
0.084199 oz
Tags
IRFZ44Z, IRFZ44, IRFZ4, IRFZ, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 55 V 13.9 mOhm 29 nC HEXFET® Power Mosfet - TO-262-3
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
*** Stop Electro
Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:51A; On Resistance, Rds(on):13.9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***ure Electronics
Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262
*** Source Electronics
Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-262 Tube / MOSFET N-CH 55V 49A TO-262
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***roFlash
Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:55V; On Resistance Rds(on):17.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:49A; Package / Case:TO-262; Power Dissipation Pd:110W; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 49 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 17.5 / Gate-Source Voltage V = 20 / Fall Time ns = 45 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 44 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 94
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.0165Ohm;ID 53A;TO-262;PD 107W;VGS +/-20V
***ure Electronics
Single N-Channel 55 V 16.5 mOhm 48 nC HEXFET® Power Mosfet - TO-262
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
*** Stop Electro
Power Field-Effect Transistor, 39A I(D), 55V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:53A; On Resistance, Rds(on):16.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
***i-Key
MOSFET N-CH 55V 45A TO-262
***i-Key Marketplace
OPTLMOS N-CHANNEL POWER MOSFET
***ernational Rectifier
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
P CHANNEL MOSFET, -55V, 31A, TO-262; Tra; P CHANNEL MOSFET, -55V, 31A, TO-262; Transistor Polarity:P Channel; Continuous Drain Current Id:-31A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-4V
***ernational Rectifier
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
***(Formerly Allied Electronics)
MOSFET; 55V; 104A; 8 MOHM; 86.7 NC QG; LOGIC LEVEL; TO-262
***et Europe
Trans MOSFET N-CH 55V 104A 3-Pin(3+Tab) TO-262
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:104A; On Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-262 ;RoHS Compliant: Yes
Teil # Mfg. Beschreibung Aktie Preis
IRFZ44ZLPBF
DISTI # V99:2348_13892547		Infineon Technologies AGTrans MOSFET N-CH Si 55V 51A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		450
  • 1000:$0.7856
  • 500:$0.9289
  • 100:$1.0427
  • 10:$1.2488
  • 1:$1.4255
IRFZ44ZLPBF
DISTI # IRFZ44ZLPBF-ND		Infineon Technologies AGMOSFET N-CH 55V 51A TO-262
RoHS: Compliant
Min Qty: 1
Container: Tube		5376In Stock
  • 1000:$0.9610
  • 500:$1.1598
  • 100:$1.4912
  • 10:$1.8560
  • 1:$2.0500
IRFZ44ZLPBF
DISTI # 26198408		Infineon Technologies AGTrans MOSFET N-CH Si 55V 51A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		450
  • 100:$1.0566
  • 10:$1.2537
IRFZ44ZLPBF
DISTI # IRFZ44ZLPBF		Infineon Technologies AGTrans MOSFET N-CH 55V 51A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRFZ44ZLPBF)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.6939
  • 2000:$0.6689
  • 4000:$0.6449
  • 6000:$0.6229
  • 10000:$0.6119
IRFZ44ZLPBF
DISTI # SP001571852		Infineon Technologies AGTrans MOSFET N-CH 55V 51A 3-Pin(3+Tab) TO-262 (Alt: SP001571852)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.0449
  • 10:€0.9279
  • 25:€0.8359
  • 50:€0.7599
  • 100:€0.6959
  • 500:€0.6429
  • 1000:€0.5969
IRFZ44ZLPBF
DISTI # 70018397		Infineon Technologies AGIRFZ44ZLPBF N-channel MOSFET Module,51A,55 V,3-Pin TO-262
RoHS: Compliant		0
  • 450:$2.0400
IRFZ44ZLPBF
DISTI # 942-IRFZ44ZLPBF		Infineon Technologies AGMOSFET MOSFT 55V 51A 13.9mOhm 29nC
RoHS: Compliant		1213
  • 1:$1.7800
  • 10:$1.5100
  • 100:$1.2100
  • 500:$1.0600
  • 1000:$0.8740
IRFZ44ZLPBF
DISTI # 8655857P		Infineon Technologies AGMOSFET N-CH 55V 51A HEXFET TO-262, TU370
  • 100:£0.8740
  • 250:£0.8220
  • 500:£0.7660
  • 1350:£0.6340
IRFZ44ZLPBF
DISTI # C1S322000604434		Infineon Technologies AGTrans MOSFET N-CH Si 55V 51A 3-Pin(3+Tab) TO-262 Tube
RoHS: Compliant		450
  • 100:$1.0566
  • 10:$1.2537
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IRFZ44ZLPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,77 $
1,77 $
10
1,50 $
15,00 $
100
1,20 $
120,00 $
500
1,05 $
525,00 $
1000
0,87 $
874,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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