BSC046N02KS G

BSC046N02KS G
Mfr. #:
BSC046N02KS G
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC046N02KS G Datenblatt
Die Zustellung:
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Zahlung:
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ECAD Model:
Mehr Informationen:
BSC046N02KS G Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller
Infineon-Technologien
Produktkategorie
FETs - Einzeln
Serie
OptiMOS
Verpackung
Digi-ReelR Alternative Verpackung
Teil-Aliasnamen
BSC046N02KSGAUMA1 BSC046N02KSGXT SP000379666
Montageart
SMD/SMT
Handelsname
OptiMOS
Paket-Koffer
8-PowerTDFN
Technologie
Si
Betriebstemperatur
-55°C ~ 150°C (TJ)
Befestigungsart
Oberflächenmontage
Anzahl der Kanäle
1 Channel
Lieferanten-Geräte-Paket
PG-TDSON-8
Aufbau
Single Quad Drain Triple Source
FET-Typ
MOSFET N-Kanal, Metalloxid
Leistung max
48W
Transistor-Typ
1 N-Channel
Drain-zu-Source-Spannung-Vdss
20V
Eingangskapazität-Ciss-Vds
4100pF @ 10V
FET-Funktion
Logic Level Gate, 2.5V Drive
Strom-Dauer-Drain-Id-25°C
19A (Ta), 80A (Tc)
Rds-On-Max-Id-Vgs
4.6 mOhm @ 50A, 4.5V
Vgs-th-Max-Id
1.2V @ 110μA
Gate-Lade-Qg-Vgs
27.6nC @ 4.5V
Pd-Verlustleistung
2.8 W
Maximale-Betriebstemperatur
+ 150 C
Mindest-Betriebstemperatur
- 55 C
Abfallzeit
6 ns
Anstiegszeit
117 ns
Vgs-Gate-Source-Spannung
12 V
ID-Dauer-Drain-Strom
19 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Rds-On-Drain-Source-Widerstand
4.6 mOhms
Transistor-Polarität
N-Kanal
Typische-Ausschaltverzögerungszeit
34 ns
Typische-Einschaltverzögerungszeit
15 ns
Kanal-Modus
Erweiterung
Tags
BSC046N02KSG, BSC046N0, BSC046, BSC04, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Teil # Mfg. Beschreibung Aktie Preis
BSC046N02KSGAUMA1
DISTI # V72:2272_06384263
Infineon Technologies AGTrans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R
RoHS: Compliant
343
  • 250:$0.8211
  • 100:$0.8730
  • 25:$0.9934
  • 10:$1.0199
  • 1:$1.1493
BSC046N02KSGAUMA1
DISTI # BSC046N02KSGAUMA1CT-ND
Infineon Technologies AGMOSFET N-CH 20V 80A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
3714In Stock
  • 1000:$0.6732
  • 500:$0.8527
  • 100:$1.0995
  • 10:$1.3910
  • 1:$1.5700
BSC046N02KSGAUMA1
DISTI # BSC046N02KSGAUMA1DKR-ND
Infineon Technologies AGMOSFET N-CH 20V 80A TDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
3714In Stock
  • 1000:$0.6732
  • 500:$0.8527
  • 100:$1.0995
  • 10:$1.3910
  • 1:$1.5700
BSC046N02KSGAUMA1
DISTI # BSC046N02KSGAUMA1TR-ND
Infineon Technologies AGMOSFET N-CH 20V 80A TDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 5000:$0.5795
BSC046N02KSGAUMA1
DISTI # 31278753
Infineon Technologies AGTrans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R
RoHS: Compliant
5000
  • 5000:$0.6740
BSC046N02KSGAUMA1
DISTI # 29571910
Infineon Technologies AGTrans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R
RoHS: Compliant
343
  • 250:$0.8216
  • 100:$0.8712
  • 25:$0.9911
  • 12:$1.0180
BSC046N02KSGAUMA1
DISTI # BSC046N02KSGAUMA1
Infineon Technologies AGTrans MOSFET N-CH 20V 19A 8-Pin TDSON EP - Tape and Reel (Alt: BSC046N02KSGAUMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 5000:$0.5699
  • 10000:$0.5499
  • 20000:$0.5299
  • 30000:$0.5119
  • 50000:$0.5029
BSC046N02KS G
DISTI # 726-BSC046N02KSG
Infineon Technologies AGMOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2
RoHS: Compliant
19503
  • 1:$1.3000
  • 10:$1.1100
  • 100:$0.8520
  • 500:$0.7530
  • 1000:$0.5950
BSC046N02KSGInfineon Technologies AG19 A, 20 V, 0.0046 ohm, N-CHANNEL, Si, POWER, MOSFET4256
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  • 1779:$0.3960
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BSC046N02KSGAUMA1
DISTI # 7528167P
Infineon Technologies AGMOSFET N-CHANNEL 20V 19A OPTIMOS2 TDSON8, RL1540
  • 20:£0.7550
  • 40:£0.6900
  • 100:£0.6500
  • 200:£0.6400
BSC046N02KSGAUMA1
DISTI # BSC046N02KSGAUMA1
Infineon Technologies AGTransistor: N-MOSFET,unipolar,20V,60A,48W,PG-TDSON-842
  • 1:$1.0273
  • 25:$0.8838
  • 100:$0.7093
  • 250:$0.6164
  • 1000:$0.5739
BSC046N02KSGInfineon Technologies AG 16998
    BSC046N02KSGAUMA1
    DISTI # C1S322000217900
    Infineon Technologies AGTrans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R
    RoHS: Compliant
    343
    • 250:$0.9407
    • 100:$0.9511
    • 25:$1.1449
    • 10:$1.1580
    BSC046N02KSGAUMA1
    DISTI # C1S322000529090
    Infineon Technologies AGTrans MOSFET N-CH 20V 19A 8-Pin TDSON EP T/R
    RoHS: Compliant
    5000
    • 5000:$0.5930
    BSC046N02KSGAUMA1
    DISTI # 2480738
    Infineon Technologies AGMOSFET, N-CH, 20V, 80A, TDSON-8
    RoHS: Compliant
    0
    • 1:$2.0600
    • 10:$1.7600
    • 100:$1.3500
    • 500:$1.1900
    • 1000:$0.9420
    • 5000:$0.8340
    • 10000:$0.8050
    BSC046N02KSGAUMA1
    DISTI # 2480738RL
    Infineon Technologies AGMOSFET, N-CH, 20V, 80A, TDSON-8
    RoHS: Compliant
    0
    • 1:$2.0600
    • 10:$1.7600
    • 100:$1.3500
    • 500:$1.1900
    • 1000:$0.9420
    • 5000:$0.8340
    • 10000:$0.8050
    Bild Teil # Beschreibung
    BSC046N02KS G

    Mfr.#: BSC046N02KS G

    OMO.#: OMO-BSC046N02KS-G

    MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2
    BSC046N10NS3 G

    Mfr.#: BSC046N10NS3 G

    OMO.#: OMO-BSC046N10NS3-G

    MOSFET N-Ch 100V 100A TDSON-8
    BSC046N10NS3GATMA1

    Mfr.#: BSC046N10NS3GATMA1

    OMO.#: OMO-BSC046N10NS3GATMA1

    MOSFET N-Ch 100V 100A TDSON-8
    BSC046N02KSGAUMA1

    Mfr.#: BSC046N02KSGAUMA1

    OMO.#: OMO-BSC046N02KSGAUMA1

    MOSFET LV POWER MOS
    BSC046N02KS G

    Mfr.#: BSC046N02KS G

    OMO.#: OMO-BSC046N02KS-G-1190

    MOSFET N-Ch 20V 80A TDSON-8 OptiMOS 2
    BSC046N10NS

    Mfr.#: BSC046N10NS

    OMO.#: OMO-BSC046N10NS-1190

    Neu und Original
    BSC046N10NS3 G

    Mfr.#: BSC046N10NS3 G

    OMO.#: OMO-BSC046N10NS3-G-1190

    Trans MOSFET N-CH 100V 17A 8-Pin TDSON T/R (Alt: BSC046N10NS3 G)
    BSC046N10NS3G

    Mfr.#: BSC046N10NS3G

    OMO.#: OMO-BSC046N10NS3G-1190

    POWER FIELD-EFFECT TRANSISTOR, 17A I(D), 100V, 0.0046OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    BSC046N02KSGAUMA1

    Mfr.#: BSC046N02KSGAUMA1

    OMO.#: OMO-BSC046N02KSGAUMA1-INFINEON-TECHNOLOGIES

    MOSFET N-CH 20V 80A TDSON-8
    BSC046N10NS3GATMA1

    Mfr.#: BSC046N10NS3GATMA1

    OMO.#: OMO-BSC046N10NS3GATMA1-INFINEON-TECHNOLOGIES

    MOSFET N-Ch 100V 100A TDSON-8
    Verfügbarkeit
    Aktie:
    Available
    Auf Bestellung:
    1500
    Menge eingeben:
    Der aktuelle Preis von BSC046N02KS G dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    0,89 $
    0,89 $
    10
    0,85 $
    8,48 $
    100
    0,80 $
    80,33 $
    500
    0,76 $
    379,30 $
    1000
    0,71 $
    714,00 $
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