FDS6900AS

Mfr. #:: FDS6900AS
Hersteller:: ON Semiconductor
Beschreibung:: MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: FDS6900AS Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller: Fairchild Semiconductor

Produktkategorie: FETs - Arrays

Serie: PowerTrenchR, SyncFET

Verpackung: Digi-ReelR Alternative Verpackung

Teil-Aliasnamen: FDS6900AS_NL

Gewichtseinheit: 0.006596 oz

Montageart: SMD/SMT

Paket-Koffer: 8-SOIC (0.154", 3.90mm Width)

Technologie: Si

Betriebstemperatur: -55°C ~ 150°C (TJ)

Befestigungsart: Oberflächenmontage

Anzahl der Kanäle: 2 Channel

Lieferanten-Geräte-Paket: 8-SO

Aufbau: Dual

FET-Typ: 2 N-Channel (Dual)

Leistung max: 900mW

Transistor-Typ: 2 N-Channel

Drain-zu-Source-Spannung-Vdss: 30V

Eingangskapazität-Ciss-Vds: 600pF @ 15V

FET-Funktion: Logik-Level-Gate

Strom-Dauer-Drain-Id-25°C: 6.9A, 8.2A

Rds-On-Max-Id-Vgs: 27 mOhm @ 6.9A, 10V

Vgs-th-Max-Id: 3V @ 250μA

Gate-Lade-Qg-Vgs: 15nC @ 10V

Pd-Verlustleistung: 2 W

Maximale-Betriebstemperatur: + 150 C

Mindest-Betriebstemperatur: - 55 C

Abfallzeit: 3 ns

Anstiegszeit: 4 ns

Vgs-Gate-Source-Spannung: 20 V

ID-Dauer-Drain-Strom: 6.9 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Rds-On-Drain-Source-Widerstand: 22 mOhms

Transistor-Polarität: N-Kanal

Typische-Ausschaltverzögerungszeit: 23 ns

Typische-Einschaltverzögerungszeit: 9 ns

Vorwärts-Transkonduktanz-Min: 25 S 21 S

Kanal-Modus: Erweiterung

Tags: FDS6900A, FDS690, FDS69, FDS6, FDS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDS6900AS Beschreibung

***ical: Trans MOSFET N-CH 30V 6.9A/8.2A 8-Pin SOIC N T/R

***ment14 APAC: MOSFET, DUAL, N, SMD, SO-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:6.9A; Drain Source Voltage Vds:30V; On Resistance Rds(on):27mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Cont Current Id N Channel 2:6.9A; Cont Current Id N Channel 3:8.2A; Current Id Max:8.2A; No. of Transistors:1; On State Resistance Channel 1:27mohm; On State Resistance N Channel 2:22mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Pulse Current Idm N Channel 2:20A; Pulse Current Idm N Channel 3:30A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: The FDS6900AS is designed to replace two single SO- 8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6900AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the lowside switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
FDS6900AS DISTI # FDS6900ASCT-ND	ON Semiconductor	MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	736In Stock	1000:$0.5081 500:$0.6437 100:$0.8300 10:$1.0500 1:$1.1900
FDS6900AS DISTI # FDS6900ASDKR-ND	ON Semiconductor	MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	736In Stock	1000:$0.5081 500:$0.6437 100:$0.8300 10:$1.0500 1:$1.1900
FDS6900AS DISTI # FDS6900ASTR-ND	ON Semiconductor	MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$0.4605
FDS6900AS DISTI # FDS6900AS	ON Semiconductor	Trans MOSFET N-CH 30V 6.9A/8.2A 8-Pin SOIC N T/R (Alt: FDS6900AS) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.6849 5000:€0.5329 10000:€0.4419 15000:€0.3729 25000:€0.3449
FDS6900AS DISTI # FDS6900AS	ON Semiconductor	Trans MOSFET N-CH 30V 6.9A/8.2A 8-Pin SOIC N T/R (Alt: FDS6900AS) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
FDS6900AS DISTI # FDS6900AS	ON Semiconductor	Trans MOSFET N-CH 30V 6.9A/8.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS6900AS) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3559 5000:$0.3539 10000:$0.3499 15000:$0.3449 25000:$0.3369
FDS6900AS DISTI # 64K0981	ON Semiconductor	TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,30V V(BR)DSS,6.9A I(D),SO	0	1:$0.4220 2500:$0.4190 10000:$0.4040 25000:$0.3920
FDS6900AS DISTI # 61M6320	ON Semiconductor	MOSFET, DUAL, N, SMD, SO-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:6.9A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.027ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.9V,Product Range:-RoHS Compliant: Yes	174	1:$0.9900 10:$0.8380 25:$0.7730 50:$0.7080 100:$0.6430 250:$0.6060 500:$0.5690 1000:$0.4490
FDS6900AS DISTI # 512-FDS6900AS	ON Semiconductor	MOSFET Dual NCh PowerTrench RoHS: Compliant	502	1:$0.9900 10:$0.8380 100:$0.6430 500:$0.5690 1000:$0.4490 2500:$0.3980
FDS6900AS	Fairchild Semiconductor Corporation	Small Signal Field-Effect Transistor, 8.2A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	73441	1000:$0.5700 500:$0.6000 100:$0.6200 25:$0.6500 1:$0.7000
FDS6900AS	Fairchild Semiconductor Corporation		13934
FDS6900AS DISTI # 6710643P	ON Semiconductor	MOSFET N-CHANNEL 30V 6.9A/8.2A SOIC8, RL	675	50:£0.3920 100:£0.3580
FDS6900AS DISTI # FDS6900AS	ON Semiconductor	Transistor: N-MOSFET x2,unipolar,30V,8.2/6.9A,1.6W,SO8	489	1:$1.5300 5:$1.3500 25:$1.1500 100:$1.0200
FDS6900AS		INSTOCK	870
FDS6900AS DISTI # 1495214	ON Semiconductor	MOSFET, DUAL, N, SMD, SO-8 RoHS: Compliant	174	1:$1.5700 10:$1.3300 100:$1.0200 500:$0.9000 1000:$0.7110 2500:$0.6300

Verwandte Produkte

Bild	Teil #	Beschreibung
	Mfr.#: FDS6898AZ OMO.#: OMO-FDS6898AZ	MOSFET SO-8
	Mfr.#: FDS6982AS OMO.#: OMO-FDS6982AS	MOSFET SO-8 N-CH 1&2 30V
	Mfr.#: FDS6676AS OMO.#: OMO-FDS6676AS	MOSFET 30V NCH POWER TRENCH MOSFET
	Mfr.#: FDS6670A OMO.#: OMO-FDS6670A-ON-SEMICONDUCTOR	MOSFET N-CH 30V 13A 8-SOIC
	Mfr.#: FDS6670S-NL OMO.#: OMO-FDS6670S-NL-1190	Neu und Original
	Mfr.#: FDS6675-NL OMO.#: OMO-FDS6675-NL-1190	Neu und Original
	Mfr.#: FDS6680AS-NL OMO.#: OMO-FDS6680AS-NL-1190	Neu und Original
	Mfr.#: FDS6898A , 1N5257B OMO.#: OMO-FDS6898A-1N5257B-1190	Neu und Original
	Mfr.#: FDS6982S-SO-TAP-FAIR OMO.#: OMO-FDS6982S-SO-TAP-FAIR-1190	Neu und Original
	Mfr.#: FDS6679A2 OMO.#: OMO-FDS6679A2-1190	Neu und Original

Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1500
Menge eingeben:

Der aktuelle Preis von FDS6900AS dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,48 $~~; ~~0,48 $~~

10: ~~0,46 $~~; ~~4,56 $~~

100: ~~0,43 $~~; ~~43,19 $~~

500: ~~0,41 $~~; ~~203,95 $~~

1000: ~~0,38 $~~; ~~383,90 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

FDS6900A 3
FDS690 8
FDS69 103
FDS6 349
FDS 1298

FDS6900AS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes