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SQJ840EP-T1_GE3

SQJ840EP-T1_GE3
Mfr. #:
SQJ840EP-T1_GE3
Hersteller:
Vishay / Siliconix
Beschreibung:
MOSFET 30V 30A 46W AEC-Q101 Qualified
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
SQJ840EP-T1_GE3 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SQJ840EP-T1_GE3 DatasheetSQJ840EP-T1_GE3 Datasheet (P4-P6)SQJ840EP-T1_GE3 Datasheet (P7-P9)SQJ840EP-T1_GE3 Datasheet (P10-P12)
ECAD Model:
Mehr Informationen:
SQJ840EP-T1_GE3 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Vishay
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PowerPAK-SO-8L-4
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
30 A
Rds On - Drain-Source-Widerstand:
7.5 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
38 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
46 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Handelsname:
TrenchFET
Verpackung:
Spule
Höhe:
1.04 mm
Länge:
6.15 mm
Serie:
SQ
Transistortyp:
1 N-Channel
Breite:
5.13 mm
Marke:
Vishay / Siliconix
Vorwärtstranskonduktanz - Min:
38 S
Abfallzeit:
17 ns
Produktart:
MOSFET
Anstiegszeit:
11 ns
Werkspackungsmenge:
3000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
28 ns
Typische Einschaltverzögerungszeit:
11 ns
Gewichtseinheit:
0.017870 oz
Tags
SQJ84, SQJ8, SQJ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 30V 30A Automotive 5-Pin(4+Tab) PowerPAK SO T/R
***ure Electronics
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***ark
MOSFET,N CHANNEL,W DIODE,30V,30A,POPAK8L
***ronik
N-CH 30V 30A 115mOhm PPSO-8L RoHSconf
*** Americas
N-CHANNEL 30-V (D-S) 175C MOSFET
***S
French Electronic Distributor since 1988
***nell
MOSFET,N CH,W DIODE,30V,30A,POPAK8L; Transistor Polarity: N Channel; Continuous Drain Current Id: 30A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0075ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 46W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Voltage Vgs Max: 20V
***ure Electronics
Single N-Channel 30 V 8.7 mOhm 12 nC HEXFET® Power Mosfet - PQFN-5 x 6 mm
***ineon SCT
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
***(Formerly Allied Electronics)
MOSFET, 30V, 14A, 8.7 MOHM, 8.1 NC QG, PQFN56
***ment14 APAC
MOSFET, N CH, 30V, 14A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:15A; Package / Case:PQFN; Power Dissipation Pd:3.1W; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
***(Formerly Allied Electronics)
SIRA18DP-T1-GE3 N-channel MOSFET Transistor; 15.5 A; 30 V; 8-Pin PowerPAK SO
***ure Electronics
Single N-Channel 30 V 15.5 A 3.3 W Surface Mount Mosfet - POWERPAK-SO-8
***nell
MOSFET, N-CH, 30V, 33A, POWERPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.006ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:14.7W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 30V, 15A, 8.5 MOHM, 9.3 NC QG, PQFN56
***et
Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:15A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):8.5mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 30V, 15A, PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:34A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V
***emi
PowerTrench® MOSFET, N-Channel, 25V, 35A, 8.5mΩ
***ure Electronics
N-Channel 25 V 35 A 8.5 mOhm PowerTrench® MOSFET- TO-252AA
*** Stop Electro
Power Field-Effect Transistor, 35A I(D), 25V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***el Electronic
Rectangular Connectors - Headers, Receptacles, Female Sockets 2 Socket Solder Beryllium Copper Through Hole Bulk Gold Polycyclohexylenedimethylene Terephthalate (PCT), Polyester, Glass Filled 10 CONN SOCKET 10POS 0.1 GOLD PCB
***rchild Semiconductor
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
***nell
MOSFET, N CH, 25V, 35A, TO-252AA-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 35A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0065ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 50W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***emi
Power MOSFET 25V 72A 8 mOhm Single N-Channel DPAK
***Yang
Trans MOSFET N-CH 25V 32A 3-Pin(2+Tab) DPAK T/R - Tape and Reel
***r Electronics
Power Field-Effect Transistor, 32A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ser
MOSFETs- Power and Small Signal 25V 75A N-Channel
***ment14 APAC
N CHANNEL MOSFET, 25V, 75A, D-PAK
***emi
Asymmetric Dual N-Channel MOSFET, PowerTrench® Power Stage, 30V
***et
Transistor MOSFET Array Dual N-CH 30V 60A/148A 8-Pin Power 56 T/R
***ure Electronics
Trans MOSFET N-CH 30V 13A/27A 8-Pin Power 56 T/R - Tape and Reel
***nell
MOSFET, NN CH, ASYMMETRIC, 30V, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
SQ Automotive Power MOSFETs
Vishay / Siliconix SQ Automotive Power MOSFETs are AEC-Q101 qualified that are produced using a special process design that is optimized for use in the automotive industry. These SQ MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. The SQ MOSFETs are available in a wide variety of packages for design flexibility. Packages include the TO-252, TO-262, TO-263, PowerPAK SO-8, D2PAK (TO-263), DPAK, and PowerPAK 1212-8W as well as several space-saving, small-outline options. A full range of polarity options is also available, including N-channel and P-Channel co-packages.
Teil # Mfg. Beschreibung Aktie Preis
SQJ840EP-T1_GE3
DISTI # SQJ840EP-T1_GE3-ND		Vishay SiliconixMOSFET N-CH 30V 30A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$0.6909
SQJ840EP-T1_GE3
DISTI # SQJ840EP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 30V 30A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ840EP-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
    SQJ840EP-T1_GE3
    DISTI # SQJ840EP-T1_GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 30A 5-Pin(4+Tab) PowerPAK SO T/R - Tape and Reel (Alt: SQJ840EP-T1_GE3)
    RoHS: Not Compliant
    Min Qty: 3000
    Container: Reel    		Americas - 0
    • 30000:$0.6019
    • 18000:$0.6189
    • 12000:$0.6359
    • 6000:$0.6629
    • 3000:$0.6839
    SQJ840EP-T1_GE3
    DISTI # SQJ840EP-T1-GE3    		Vishay IntertechnologiesTrans MOSFET N-CH 30V 30A 5-Pin(4+Tab) PowerPAK SO T/R (Alt: SQJ840EP-T1-GE3)
    RoHS: Compliant
    Min Qty: 3000
    Container: Tape and Reel    		Europe - 0
    • 30000:€0.6759
    • 18000:€0.7069
    • 12000:€0.7999
    • 6000:€0.9859
    • 3000:€1.3749
    SQJ840EP-T1_GE3
    DISTI # 78-SQJ840EP-T1_GE3    		Vishay IntertechnologiesMOSFET 30V 30A 46W AEC-Q101 Qualified
    RoHS: Compliant    		3000
    • 1:$1.6400
    • 10:$1.3500
    • 100:$1.0300
    • 500:$0.8930
    • 1000:$0.7040
    • 3000:$0.6570
    • 6000:$0.6250
    • 9000:$0.6110
    SQJ840EP-T1-GE3
    DISTI # 78-SQJ840EP-T1-GE3    		Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQJ840EP-T1_GE3
    RoHS: Compliant    		0
      SQJ840EP-T1_GE3Vishay Intertechnologies 2990
        SQJ840EP-T1-GE3Vishay IntertechnologiesMOSFET RECOMMENDED ALT 78-SQJ840EP-T1_GE3
        RoHS: Compliant        		Americas -
          Bild Teil # Beschreibung
          SQJ840EP-T1_GE3

          Mfr.#: SQJ840EP-T1_GE3

          OMO.#: OMO-SQJ840EP-T1-GE3-286

          		 MOSFET 30V 30A 46W AEC-Q101 Qualified
          SQJ840EP-T1-GE3

          Mfr.#: SQJ840EP-T1-GE3

          OMO.#: OMO-SQJ840EP-T1-GE3-4B8

          		 MOSFET RECOMMENDED ALT 78-SQJ840EP-T1_GE3
          SQJ840EP-T1-GE3

          Mfr.#: SQJ840EP-T1-GE3

          OMO.#: OMO-SQJ840EP-T1-GE3-317

          		 RF Bipolar Transistors MOSFET 30V 30A 46W N-Ch Automotive
          SQJ840EP-T1_GE3

          Mfr.#: SQJ840EP-T1_GE3

          OMO.#: OMO-SQJ840EP-T1-GE3-VISHAY

          		 MOSFET N-CH 30V 30A PPAK SO-8
          Verfügbarkeit
          Aktie:
          Available
          Auf Bestellung:
          1986
          Menge eingeben:
          Der aktuelle Preis von SQJ840EP-T1_GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
          Referenzpreis (USD)
          Menge
          Stückpreis
          ext. Preis
          1
          1,64 $
          1,64 $
          10
          1,35 $
          13,50 $
          100
          1,03 $
          103,00 $
          500
          0,89 $
          446,50 $
          1000
          0,70 $
          704,00 $
          Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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