STP315N10F7

STP315N10F7
Mfr. #:
STP315N10F7
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STP315N10F7 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STP315N10F7 Mehr Informationen STP315N10F7 Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
100 V
Id - Kontinuierlicher Drainstrom:
180 A
Rds On - Drain-Source-Widerstand:
2.3 mOhms
Vgs th - Gate-Source-Schwellenspannung:
3.5 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
180 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
315 W
Aufbau:
Single
Qualifikation:
AEC-Q101
Handelsname:
StripFET
Verpackung:
Rohr
Serie:
STP315N10F7
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
40 ns
Produktart:
MOSFET
Anstiegszeit:
108 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
148 ns
Typische Einschaltverzögerungszeit:
62 ns
Gewichtseinheit:
0.011640 oz
Tags
STP31, STP3, STP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Japan
Trans MOSFET N-CH 100V 180A Automotive 3-Pin(3+Tab) TO-220 Tube
***icroelectronics
Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package
***el Electronic
STMICROELECTRONICS STP315N10F7 MOSFET Transistor, N Channel, 180 A, 100 V, 0.0023 ohm, 10 V, 3.5 V
STH315N10F7 STripFET VII DeepGATE Power MOSFETs
STMicroelectronics STH315N10F7 STripFET™ VII DeepGATE™ Power MOSFETs are AEC-Q101 automotive-qualified N-channel Power MOSFETs that combine best-in-class on-state resistance with low internal capacitances and gate charge, enhancing both conduction and switching efficiency. Available in TO-220 or 2-lead or 6-lead H2PAK industry-standard packages, these devices help designers reduce board size and maximize power density. STH315N10F7 MOSFETs also have high avalanche ruggedness to survive potentially damaging conditions. With a 100V rating, these STripFET VII DeepGATE MOSFETs provide an adequate safety margin to withstand typical over-voltage surges. STH315N10F7 STripFET VII DeepGATE MOSFETs are also well-suited for highly rugged performance in automotive and switching applications.
STripFET Power MOSFETs
STMIcroelectronics STripFET™ Power MOSFETs are enhancement-mode MOSFETs that benefit from the latest refinement of the STMicroelectronics proprietary STripFET™ technology with a new gate structure. The resulting STripFET™ Power MOSFET exhibits the high current and low RDS(on) required by automotive and industrial switching applications such as motor control, UPS, DC/DC converters, induction heater vaporizers and solar. STMicroelectronics STripFET™ Power MOSFETs have a very low switching gate charge, high avalanche ruggedness, low gate drive power losses and high power density. These STripFET™ Power MOSFETs offer among the industry's lowest RDS(on) 30V-150V power MOSFETs in the market.
STripFET™ F7 Power MOSFETs
STMicroelectronics STripFET F7 MOSFETs feature an enhanced trench-gate structure with faster and more efficient switching for simplified designs and reduced equipment size and cost. Low on-state resistance combined with low switching losses lower on-state resistance while reducing internal capacitances and gate charge. They are ideal for synchronous rectification and have an optimal capacitance Crss/Ciss ratio for lowest EMI. The STripFET F7 feature high avalanche ruggedness.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Teil # Mfg. Beschreibung Aktie Preis
STP315N10F7
DISTI # V99:2348_18461576
STMicroelectronicsTrans MOSFET N-CH 100V 180A Automotive 3-Pin(3+Tab) TO-220 Tube
RoHS: Compliant
0
    STP315N10F7
    DISTI # V36:1790_06564689
    STMicroelectronicsTrans MOSFET N-CH 100V 180A Automotive 3-Pin(3+Tab) TO-220 Tube
    RoHS: Compliant
    0
      STP315N10F7
      DISTI # 497-14717-5-ND
      STMicroelectronicsMOSFET N-CH 100V 180A TO-220AB
      RoHS: Compliant
      Min Qty: 1
      Container: Tube
      1029In Stock
      • 2500:$2.9494
      • 500:$3.6812
      • 100:$4.3243
      • 50:$4.9896
      • 10:$5.2780
      • 1:$5.8800
      STP315N10F7
      DISTI # STP315N10F7
      STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin TO-220 Tube (Alt: STP315N10F7)
      RoHS: Compliant
      Min Qty: 1
      Container: Tube
      Europe - 0
      • 1000:€1.6900
      • 500:€1.7900
      • 100:€1.8900
      • 25:€1.9900
      • 50:€1.9900
      • 10:€2.0900
      • 1:€2.2900
      STP315N10F7
      DISTI # STP315N10F7
      STMicroelectronicsTrans MOSFET N-CH 100V 180A 3-Pin TO-220 Tube - Rail/Tube (Alt: STP315N10F7)
      RoHS: Compliant
      Min Qty: 1000
      Container: Tube
      Americas - 0
      • 10000:$2.4900
      • 6000:$2.5900
      • 4000:$2.6900
      • 2000:$2.7900
      • 1000:$2.9900
      STP315N10F7
      DISTI # 79X6519
      STMicroelectronicsPTD LOW VOLTAGE0
      • 500:$2.6200
      • 250:$2.7100
      • 100:$3.2300
      • 50:$3.7300
      • 25:$3.9800
      • 10:$4.5400
      • 1:$5.2500
      STP315N10F7
      DISTI # 511-STP315N10F7
      STMicroelectronicsMOSFET Automotive-grade N-channel 100 V, 2.3 mOhm typ., 180 A STripFET F7 Power MOSFET in a TO-220 package
      RoHS: Compliant
      0
      • 1:$5.3400
      • 10:$4.5400
      • 100:$3.9400
      • 250:$3.7300
      • 500:$3.3500
      STP315N10F7
      DISTI # 2451119
      STMicroelectronicsMOSFET, N CH, 100V, 180A, TO-220-3
      RoHS: Compliant
      0
      • 500:$5.1600
      • 250:$5.7400
      • 100:$6.0600
      • 10:$6.9800
      • 1:$8.2200
      STP315N10F7
      DISTI # STP315N10F7
      STMicroelectronicsN-Ch 100V 180A 315W 0,0027R TO220
      RoHS: Compliant
      0
      • 10:€2.2200
      • 50:€2.0200
      • 200:€1.9200
      • 500:€1.8500
      Bild Teil # Beschreibung
      AUIRFB8407

      Mfr.#: AUIRFB8407

      OMO.#: OMO-AUIRFB8407

      MOSFET Auto 40V N-Ch FET 1.4mOhm 195A
      AUIRFB8407

      Mfr.#: AUIRFB8407

      OMO.#: OMO-AUIRFB8407-INFINEON-TECHNOLOGIES

      Darlington Transistors MOSFET Auto 40V N-Ch FET 1.4mOhm 195A
      TMR 1-2415

      Mfr.#: TMR 1-2415

      OMO.#: OMO-TMR-1-2415-TRACO-POWER

      Isolated DC/DC Converters
      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      5500
      Menge eingeben:
      Der aktuelle Preis von STP315N10F7 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
      Referenzpreis (USD)
      Menge
      Stückpreis
      ext. Preis
      1
      5,34 $
      5,34 $
      10
      4,54 $
      45,40 $
      100
      3,94 $
      394,00 $
      250
      3,73 $
      932,50 $
      500
      3,35 $
      1 675,00 $
      Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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