SI4590DY-T1-GE3

Mfr. #:: SI4590DY-T1-GE3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET -100V Vds 20V Vgs SO-8 N&P PAIR
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SI4590DY-T1-GE3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SI4590DY-T1-GE3 Datasheet SI4590DY-T1-GE3 Datasheet (P4-P6)SI4590DY-T1-GE3 Datasheet (P7-P9)SI4590DY-T1-GE3 Datasheet (P10-P12)SI4590DY-T1-GE3 Datasheet (P13-P14)
ECAD Model:
Mehr Informationen:: SI4590DY-T1-GE3 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SO-8

Anzahl der Kanäle:: 2 Channel

Polarität des Transistors:: N-Kanal, P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 100 V

Id - Kontinuierlicher Drainstrom:: 5.6 A, 3.4 A

Rds On - Drain-Source-Widerstand:: 57 mOhms, 183 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1.5 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 11.5 nC, 36 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 3.6 W, 4.2 W

Aufbau:: Dual

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET

Verpackung:: Spule

Serie:: SI4

Transistortyp:: 1 N-Channel, 1 P-Channel

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 9 S, 9.3 S

Abfallzeit:: 12 ns, 25 ns

Produktart:: MOSFET

Anstiegszeit:: 73 ns, 80 ns

Werkspackungsmenge:: 2500

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 14 ns, 42 ns

Typische Einschaltverzögerungszeit:: 32 ns, 55 ns

Gewichtseinheit:: 0.017870 oz

Tags: SI459, SI45, SI4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4590DY-T1-GE3 Bewertungen und Rezensionen

V***n

Ordered 2019 03 20. Received 2019 04 08 in the mailbox.Without damage. Checked-all in working order.Corresponds to the description. Thank you very much!Recommend shop and seller!

2019-04-09

R***g

Good

2019-02-12

N***d

good product

2019-05-09

SI4590DY-T1-GE3 Beschreibung

***ure Electronics: Si4590DY Series 100 V 5.6 A 0.057 Ohm SMT N & P-Channel MOSFET - SO-8

***ical: Trans MOSFET N/P-CH 100V 4.5A/2.5A 8-Pin SOIC N T/R

***ark: N/P-Ch MOSFET SO-8 100V 57 / 183mohm @ 10V

***ment14 APAC: DUAL MOSFET,N/P-CH, 100V, 5.6A, SOIC;

*** Americas: N- AND P-CHANNEL 100-V (D-S) MOSFET

***icontronic: Small Signal Field-Effect Transistor, 5.6A I(D), 100V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET

SI4590DY-T1-GE3 Mehr Informationen

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SI4590DY-T1-GE3 DISTI # V36:1790_09215511	Vishay Intertechnologies	Trans MOSFET N/P-CH 100V 4.5A/2.5A 8-Pin SOIC N RoHS: Compliant	5000	2500:$0.3675
SI4590DY-T1-GE3 DISTI # V72:2272_09215511	Vishay Intertechnologies	Trans MOSFET N/P-CH 100V 4.5A/2.5A 8-Pin SOIC N RoHS: Compliant	1834	1000:$0.4148 500:$0.5210 250:$0.5917 100:$0.6574 25:$0.7691 10:$0.9399 1:$1.0639
SI4590DY-T1-GE3 DISTI # V99:2348_09215511	Vishay Intertechnologies	Trans MOSFET N/P-CH 100V 4.5A/2.5A 8-Pin SOIC N RoHS: Compliant	0
SI4590DY-T1-GE3 DISTI # SI4590DY-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P CHAN 100V SO8 DUAL RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	4966In Stock	1000:$0.4188 500:$0.5234 100:$0.6622 10:$0.8640 1:$0.9800
SI4590DY-T1-GE3 DISTI # SI4590DY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P CHAN 100V SO8 DUAL RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	4966In Stock	1000:$0.4188 500:$0.5234 100:$0.6622 10:$0.8640 1:$0.9800
SI4590DY-T1-GE3 DISTI # SI4590DY-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P CHAN 100V SO8 DUAL RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	2500In Stock	12500:$0.3388 5000:$0.3430 2500:$0.3684
SI4590DY-T1-GE3 DISTI # 32656145	Vishay Intertechnologies	Trans MOSFET N/P-CH 100V 4.5A/2.5A 8-Pin SOIC N RoHS: Compliant	5000	25000:$0.3594 12500:$0.3666 5000:$0.3797
SI4590DY-T1-GE3 DISTI # 32861887	Vishay Intertechnologies	Trans MOSFET N/P-CH 100V 4.5A/2.5A 8-Pin SOIC N RoHS: Compliant	5000	25000:$0.3621 12500:$0.3693 5000:$0.3825 2500:$0.4086
SI4590DY-T1-GE3 DISTI # 32713629	Vishay Intertechnologies	Trans MOSFET N/P-CH 100V 4.5A/2.5A 8-Pin SOIC N RoHS: Compliant	1834	1000:$0.4342 500:$0.5417 250:$0.7282 100:$0.7357 25:$0.9529 19:$1.0587
SI4590DY-T1-GE3 DISTI # 33612841	Vishay Intertechnologies	Trans MOSFET N/P-CH 100V 4.5A/2.5A 8-Pin SOIC N RoHS: Compliant	500	200:$0.6260 100:$0.6579 50:$0.7586 23:$0.8747
SI4590DY-T1-GE3 DISTI # SI4590DY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 100V/100V 4.5A 2.5A 8-Pin SO T/R - Tape and Reel (Alt: SI4590DY-T1-GE3) RoHS: Not Compliant Min Qty: 5000 Container: Reel	Americas - 0	50000:$0.3099 25000:$0.3179 15000:$0.3269 10000:$0.3409 5000:$0.3519
SI4590DY-T1-GE3 DISTI # 67X6867	Vishay Intertechnologies	N- AND P-CHANNEL 100-V (D-S) MOSFET	0	50000:$0.3130 30000:$0.3270 20000:$0.3510 10000:$0.3760 5000:$0.4070 1:$0.4170
SI4590DY-T1-GE3 DISTI # 78-SI4590DY-T1-GE3	Vishay Intertechnologies	MOSFET -100V Vds 20V Vgs SO-8 N&P PAIR RoHS: Compliant	5575	1:$0.9600 10:$0.7710 100:$0.5850 500:$0.4840 1000:$0.4360 2500:$0.4040
SI4590DY-T1-GE3	Vishay Intertechnologies	MOSFET -100V Vds 20V Vgs SO-8 N&P PAIR RoHS: Compliant	Americas -

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1988
Menge eingeben:

Der aktuelle Preis von SI4590DY-T1-GE3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,96 $~~; ~~0,96 $~~

10: ~~0,77 $~~; ~~7,71 $~~

100: ~~0,58 $~~; ~~58,50 $~~

500: ~~0,48 $~~; ~~242,00 $~~

1000: ~~0,39 $~~; ~~387,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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