IPN60R2K1CEATMA1

Mfr. #:: IPN60R2K1CEATMA1
Hersteller:: Infineon Technologies
Beschreibung:: MOSFET CONSUMER
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: IPN60R2K1CEATMA1 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:: IPN60R2K1CEATMA1 Mehr Informationen

Produkteigenschaft
Attributwert

Hersteller:: Infineon

Produktkategorie:: MOSFET

RoHS:: Y

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: SOT-223-4

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: N-Kanal

Vds - Drain-Source-Durchbruchspannung:: 600 V

Id - Kontinuierlicher Drainstrom:: 3.7 A

Rds On - Drain-Source-Widerstand:: 4.91 Ohms

Vgs th - Gate-Source-Schwellenspannung:: 2.5 V

Vgs - Gate-Source-Spannung:: 20 V

Qg - Gate-Ladung:: 6.7 nC

Minimale Betriebstemperatur:: - 40 C

Maximale Betriebstemperatur:: + 150 C

Pd - Verlustleistung:: 5 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: CoolMOS

Verpackung:: Spule

Höhe:: 1.6 mm

Länge:: 6.5 mm

Serie:: CoolMOS CE

Transistortyp:: 1 N-Channel

Breite:: 3.5 mm

Marke:: Infineon-Technologien

Abfallzeit:: 50 ns

Produktart:: MOSFET

Anstiegszeit:: 7 ns

Werkspackungsmenge:: 3000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 30 ns

Typische Einschaltverzögerungszeit:: 7 ns

Teil # Aliase:: IPN60R2K1CE SP001434886

Gewichtseinheit:: 0.008818 oz

Tags: IPN60R2, IPN60, IPN6, IPN

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPN60R2K1CEATMA1 Beschreibung

***ure Electronics: Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS Power Mosfet - SOT-223

***ical: Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R

***ark: Mosfet, N-Ch, 600V, 3.7A, Sot-223-3; Transistor Polarity:n Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.89Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V Rohs Compliant: Yes

***ineon: Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer

IPN60R2K1CEATMA1 Mehr Informationen

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ CE Power MOSFETs: Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.

CoolMOS CE Power MOSFETs - 600-650V: Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
IPN60R2K1CEATMA1 DISTI # 33943948	Infineon Technologies AG	Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R RoHS: Compliant	9000	3000:$0.1370
IPN60R2K1CEATMA1 DISTI # IPN60R2K1CEATMA1CT-ND	Infineon Technologies AG	MOSFET NCH 600V 3.7A SOT223 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	25In Stock	1000:$0.2011 500:$0.2603 100:$0.3313 10:$0.4440 1:$0.5200
IPN60R2K1CEATMA1 DISTI # IPN60R2K1CEATMA1DKR-ND	Infineon Technologies AG	MOSFET NCH 600V 3.7A SOT223 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	25In Stock	1000:$0.2011 500:$0.2603 100:$0.3313 10:$0.4440 1:$0.5200
IPN60R2K1CEATMA1 DISTI # IPN60R2K1CEATMA1TR-ND	Infineon Technologies AG	MOSFET NCH 600V 3.7A SOT223 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	On Order	30000:$0.1470 15000:$0.1551 6000:$0.1666 3000:$0.1781
IPN60R2K1CEATMA1 DISTI # V72:2272_14663636	Infineon Technologies AG	Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R RoHS: Compliant	0
IPN60R2K1CEATMA1 DISTI # V36:1790_14663636	Infineon Technologies AG	Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R RoHS: Compliant	0	3000000:$0.1274 1500000:$0.1277 300000:$0.1447 30000:$0.1733 3000:$0.1781
IPN60R2K1CEATMA1 DISTI # IPN60R2K1CEATMA1	Infineon Technologies AG	Trans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R - Tape and Reel (Alt: IPN60R2K1CEATMA1) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	30000:$0.1389 18000:$0.1409 12000:$0.1459 6000:$0.1509 3000:$0.1569
IPN60R2K1CEATMA1 DISTI # IPN60R2K1CE	Infineon Technologies AG	Trans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R (Alt: IPN60R2K1CE) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Asia - 0	150000:$0.1385 75000:$0.1403 30000:$0.1421 15000:$0.1439 9000:$0.1478 6000:$0.1519 3000:$0.1563
IPN60R2K1CEATMA1 DISTI # SP001434886	Infineon Technologies AG	Trans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R (Alt: SP001434886) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1299 18000:€0.1399 12000:€0.1649 6000:€0.2019 3000:€0.2599
IPN60R2K1CEATMA1 DISTI # 97Y1834	Infineon Technologies AG	Trans MOSFET N 650V 3.7A 3-Pin SOT-223 T/R - Product that comes on tape, but is not reeled (Alt: 97Y1834) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0
IPN60R2K1CEATMA1 DISTI # 97Y1834	Infineon Technologies AG	MOSFET, N-CH, 600V, 3.7A, SOT-223-3,Transistor Polarity:N Channel,Continuous Drain Current Id:3.7A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.89ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	1975	1000:$0.2070 500:$0.2270 250:$0.2480 100:$0.2670 50:$0.3250 25:$0.3820 10:$0.4390 1:$0.5230
IPN60R2K1CEATMA1 DISTI # 726-IPN60R2K1CEATMA1	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	26012	1:$0.4700 10:$0.3950 100:$0.2410 1000:$0.1860 3000:$0.1590
IPN60R2K1CEATMA1 DISTI # 1300919P	Infineon Technologies AG	MOSFET N-CH 600V 5.9A COOLMOS CE SOT-223, RL	5525	2500:£0.1200 1000:£0.1340 500:£0.1540 125:£0.1790
IPN60R2K1CEATMA1 DISTI # 2617449	Infineon Technologies AG	MOSFET, N-CH, 600V, 3.7A, SOT-223-3 RoHS: Compliant	520	1000:$0.3040 500:$0.3930 100:$0.5000 10:$0.6690 1:$0.7800
IPN60R2K1CEATMA1 DISTI # 2617449	Infineon Technologies AG	MOSFET, N-CH, 600V, 3.7A, SOT-223-3	525	500:£0.1430 250:£0.1640 100:£0.1850 25:£0.3270 5:£0.3450

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Verfügbarkeit

Aktie:: 55
Auf Bestellung:: 2038
Menge eingeben:

Der aktuelle Preis von IPN60R2K1CEATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,47 $~~; ~~0,47 $~~

10: ~~0,40 $~~; ~~3,95 $~~

100: ~~0,24 $~~; ~~24,10 $~~

1000: ~~0,19 $~~; ~~186,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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IPN60R2K1CEATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes