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FCPF190N65S3L1

FCPF190N65S3L1
Mfr. #:
FCPF190N65S3L1
Hersteller:
ON Semiconductor / Fairchild
Beschreibung:
MOSFET SuperFET3 650V 190 mOhm, TO220F PKG
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
FCPF190N65S3L1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
FCPF190N65S3L1 DatasheetFCPF190N65S3L1 Datasheet (P4-P6)FCPF190N65S3L1 Datasheet (P7-P9)FCPF190N65S3L1 Datasheet (P10-P11)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
ON Semiconductor
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
Durchgangsloch
Paket / Koffer:
TO-220F-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
14 A
Rds On - Drain-Source-Widerstand:
165 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2.5 V
Vgs - Gate-Source-Spannung:
30 V
Qg - Gate-Ladung:
30 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
33 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Verpackung:
Rohr
Serie:
FCPF190N65S3L1
Transistortyp:
1 N-Channel
Marke:
ON Semiconductor / Fairchild
Vorwärtstranskonduktanz - Min:
10 S
Abfallzeit:
15 ns
Produktart:
MOSFET
Anstiegszeit:
23 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
52 ns
Typische Einschaltverzögerungszeit:
19 ns
Gewichtseinheit:
0.080072 oz
Tags
FCPF190N65, FCPF19, FCPF1, FCPF, FCP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Semiconductor
Power MOSFET, N-Channel, SUPERFET® III, Easy Drive, 650 V, 14 A, 190 mΩ, TO-220F
***Components
In a Pack of 5, N-Channel MOSFET, 14 A, 650 V, 3-Pin TO-220F ON Semiconductor FCPF190N65S3L1
***et Europe
N-Channel SuperFET III MOSFET 650V Drain to Source Voltage 14A Continuous Drain Current 33W Power Dissipation Thru-Hole 3-Pin TO-220 Tube
***ical
N-Channel SuperFET MOSFET
***i-Key
SUPERFET3 650V 190 MOHM, TO220F
***ark
Sf3 650V 190Mohm E To220f / Tube
***rchild Semiconductor
SuperFET® III MOSFET is ON Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency.
Teil # Mfg. Beschreibung Aktie Preis
FCPF190N65S3L1
DISTI # 32920341		ON SemiconductorFCPF190N65S3L1141000
  • 1000:$0.9633
FCPF190N65S3L1
DISTI # FCPF190N65S3L1-ND		ON SemiconductorMOSFET N-CH 650V 14A TO220F-3
RoHS: Not compliant
Min Qty: 1
Container: Tube		978In Stock
  • 5000:$0.9204
  • 3000:$0.9558
  • 1000:$1.0266
  • 100:$1.5081
  • 25:$1.7700
  • 10:$1.8760
  • 1:$2.0900
FCPF190N65S3L1
DISTI # FCPF190N65S3L1		ON SemiconductorN-Channel SuperFET III MOSFET 650V Drain to Source Voltage 14A Continuous Drain Current 33W Power Dissipation Thru-Hole 3-Pin TO-220 Tube - Rail/Tube (Alt: FCPF190N65S3L1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$0.8319
  • 6000:$0.8529
  • 4000:$0.8639
  • 2000:$0.8749
  • 1000:$0.8809
FCPF190N65S3L1
DISTI # FCPF190N65S3L1		ON SemiconductorN-Channel SuperFET III MOSFET 650V Drain to Source Voltage 14A Continuous Drain Current 33W Power Dissipation Thru-Hole 3-Pin TO-220 Tube (Alt: FCPF190N65S3L1)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Asia - 0
  • 50000:$1.1054
  • 25000:$1.1238
  • 10000:$1.1626
  • 5000:$1.2041
  • 3000:$1.2487
  • 2000:$1.2967
  • 1000:$1.3486
FCPF190N65S3L1
DISTI # FCPF190N65S3L1		ON SemiconductorN-Channel SuperFET III MOSFET 650V Drain to Source Voltage 14A Continuous Drain Current 33W Power Dissipation Thru-Hole 3-Pin TO-220 Tube (Alt: FCPF190N65S3L1)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€0.8879
  • 500:€0.9019
  • 100:€0.9159
  • 50:€0.9299
  • 25:€1.0249
  • 10:€1.1979
  • 1:€1.4649
FCPF190N65S3L1
DISTI # 512-FCPF190N65S3L1		ON SemiconductorMOSFET SuperFET3 650V 190 mOhm, TO220F PKG
RoHS: Compliant		2101
  • 1:$1.9800
  • 10:$1.6800
  • 100:$1.3400
  • 500:$1.1800
  • 1000:$0.9770
  • 2000:$0.9100
  • 5000:$0.8760
FCPF190N65S3L1
DISTI # 1723428		ON SemiconductorN-CHANNEL SUPERFET MOSFET 650V 14A TO220, TU of 10001
  • 2:£1,136.5500
  • 1:£1,212.3200
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Mfr.#: LM324LVIPWR

OMO.#: OMO-LM324LVIPWR-TEXAS-INSTRUMENTS

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Mfr.#: STLINK-V3SET

OMO.#: OMO-STLINK-V3SET-STMICROELECTRONICS

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OMO.#: OMO-STF20N65M5-STMICROELECTRONICS

 MOSFET N CH 650V 18A TO-220FP
NTHL110N65S3F

Mfr.#: NTHL110N65S3F

OMO.#: OMO-NTHL110N65S3F-ON-SEMICONDUCTOR

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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von FCPF190N65S3L1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,98 $
1,98 $
10
1,68 $
16,80 $
100
1,34 $
134,00 $
500
1,18 $
590,00 $
1000
0,98 $
977,00 $
2000
0,91 $
1 820,00 $
5000
0,88 $
4 380,00 $
10000
0,84 $
8 420,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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