STB36NM60ND

STB36NM60ND
Mfr. #:
STB36NM60ND
Hersteller:
STMicroelectronics
Beschreibung:
MOSFET Auto-grade N-CH 650V 29A FDmesh II 0.097
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
STB36NM60ND Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
STB36NM60ND Mehr Informationen STB36NM60ND Product Details
Produkteigenschaft
Attributwert
Hersteller:
STMicroelectronics
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
650 V
Id - Kontinuierlicher Drainstrom:
29 A
Rds On - Drain-Source-Widerstand:
110 mOhms
Vgs th - Gate-Source-Schwellenspannung:
4 V
Vgs - Gate-Source-Spannung:
25 V
Qg - Gate-Ladung:
80.4 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
190 W
Aufbau:
Single
Qualifikation:
AEC-Q101
Verpackung:
Spule
Serie:
STW36NM60N
Transistortyp:
1 N-Channel
Marke:
STMicroelectronics
Abfallzeit:
61.8 ns
Produktart:
MOSFET
Anstiegszeit:
53.4 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
111 ns
Typische Einschaltverzögerungszeit:
30 ns
Gewichtseinheit:
0.139332 oz
Tags
STB36NM, STB36, STB3, STB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 600V 29A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
Single N-Channel 600 V 0.11 Ohm 80.4 nC 190 W Silicon SMT Mosfet - TO-263-3
***icroelectronics
Automotive-grade N-channel 600 V, 0.097 Ohm typ., 29 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
N-Channel FDmesh Power MOSFETs
STMicroelectronics N-Channel FDmesh™ Power MOSFETs are a power MOSFET which belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to STMicroelectronic's strip layout and associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. These MOSFETs feature fast recovery, low input capacitance and gate charge, low gate input resistance, and extremely high dv/dt and avalanche capabilities.
Standard Products
STMicroelectronics Standard Products are a broad range of industry-standard and drop-in replacements for the most popular general-purpose analog ICs, discrete and serial EEPROMs. The Standard Products are manufactured to the highest quality standards with many AECQ-qualified for automotive applications. A comprehensive set of design aids, including SPICE, IBIS models and simulation tools, are available to make adding to a design-in easy.
Teil # Mfg. Beschreibung Aktie Preis
STB36NM60ND
DISTI # 497-13861-2-ND
STMicroelectronicsMOSFET N-CH 600V 29A D2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
On Order
  • 1000:$3.9600
STB36NM60ND
DISTI # 497-13861-1-ND
STMicroelectronicsMOSFET N-CH 600V 29A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 500:$4.7531
  • 100:$5.7645
  • 10:$6.9320
  • 1:$7.7100
STB36NM60ND
DISTI # 497-13861-6-ND
STMicroelectronicsMOSFET N-CH 600V 29A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 500:$4.7531
  • 100:$5.7645
  • 10:$6.9320
  • 1:$7.7100
STB36NM60ND
DISTI # STB36NM60ND
STMicroelectronicsTrans MOSFET N-CH 600V 29A 3-Pin(2+Tab) D²PAK T/R - Tape and Reel (Alt: STB36NM60ND)
RoHS: Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 1000:$3.3900
  • 2000:$3.1900
  • 4000:$3.0900
  • 6000:$2.8900
  • 10000:$2.8900
STB36NM60ND
DISTI # 511-STB36NM60ND
STMicroelectronicsMOSFET Auto-grade N-CH 650V 29A FDmesh II 0.097
RoHS: Compliant
362
  • 1:$6.0600
  • 10:$5.1500
  • 100:$4.4700
  • 250:$4.2400
  • 500:$3.8000
  • 1000:$3.2100
STB36NM60ND
DISTI # 7925701P
STMicroelectronicsMOSFET N-CH 600V 29A FDMESH D2PAK, RL96
  • 10:£3.7200
  • 50:£3.4800
  • 150:£3.2300
  • 500:£2.7500
STB36NM60NDSTMicroelectronicsPower Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
RoHS: Compliant
Europe - 990
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    OMO.#: OMO-MPZ2012S601ATD25-TDK

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    Verfügbarkeit
    Aktie:
    343
    Auf Bestellung:
    2326
    Menge eingeben:
    Der aktuelle Preis von STB36NM60ND dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
    Referenzpreis (USD)
    Menge
    Stückpreis
    ext. Preis
    1
    6,05 $
    6,05 $
    10
    5,15 $
    51,50 $
    100
    4,46 $
    446,00 $
    250
    4,23 $
    1 057,50 $
    500
    3,80 $
    1 900,00 $
    Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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