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IPI126N10N3GXKSA1

IPI126N10N3GXKSA1
Mfr. #:
IPI126N10N3GXKSA1
Hersteller:
Rochester Electronics, LLC
Beschreibung:
- Bulk (Alt: IPI126N10N3GXKSA1)
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPI126N10N3GXKSA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Produkteigenschaft
Attributwert
Tags
IPI126N10N3G, IPI126, IPI12, IPI1, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 100V 58A 3-Pin(3+Tab) TO-262
***i-Key
N-CHANNEL POWER MOSFET
***el Electronic
Power Field-Effect Transistor, 58A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN
***ure Electronics
Single N-Channel 55 V 17.5 mOhm 63 nC HEXFET® Power Mosfet - TO-262
*** Source Electronics
Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-262 Tube / MOSFET N-CH 55V 49A TO-262
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***roFlash
Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:55V; On Resistance Rds(on):17.5mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:49A; Package / Case:TO-262; Power Dissipation Pd:110W; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 49 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 17.5 / Gate-Source Voltage V = 20 / Fall Time ns = 45 / Rise Time ns = 60 / Turn-OFF Delay Time ns = 44 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-262 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 94
***ure Electronics
Single N-Channel 100 V 18 mOhm 120 nC HEXFET® Power Mosfet - TO-262
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature
***(Formerly Allied Electronics)
MOSFET; 100V; 59A; 18 MOHM; 82 NC QG; TO-262
*** Electronic Components
MOSFET 100V 1 N-CH HEXFET 18mOhms 82nC
***ure Electronics
Single N-Channel 60 V 15.8 mOhm 22 nC HEXFET® Power Mosfet - TO-262-3
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***ment14 APAC
MOSFET, N, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:43A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:71W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-262; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:43A; Package / Case:TO-262; Power Dissipation Pd:71W; Pulse Current Idm:170A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
Teil # Mfg. Beschreibung Aktie Preis
IPI126N10N3GXKSA1
DISTI # IPI126N10N3GXKSA1		Infineon Technologies AG- Bulk (Alt: IPI126N10N3GXKSA1)
Min Qty: 521
Container: Bulk		Americas - 0
  • 5210:$0.6089
  • 2605:$0.6199
  • 1563:$0.6419
  • 1042:$0.6659
  • 521:$0.6909
IPI126N10N3 G
DISTI # 726-IPI126N10N3G		Infineon Technologies AGMOSFET N-Ch 100V 58A I2PAK-3 OptiMOS 3
RoHS: Compliant		22
  • 1:$1.6800
  • 10:$1.3500
  • 100:$1.0800
  • 500:$0.9490
  • 1000:$0.7870
  • 2500:$0.7300
  • 5000:$0.7030
  • 10000:$0.6500
IPI126N10N3GXKSA1Infineon Technologies AGPower Field-Effect Transistor, 58A I(D), 100V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Not Compliant		10500
  • 1000:$0.6300
  • 500:$0.6700
  • 100:$0.6900
  • 25:$0.7200
  • 1:$0.7800
Bild Teil # Beschreibung
IPI126N10N3

Mfr.#: IPI126N10N3

OMO.#: OMO-IPI126N10N3-1190

 Neu und Original
IPI126N10N3G

Mfr.#: IPI126N10N3G

OMO.#: OMO-IPI126N10N3G-1190

 Trans MOSFET N-CH 100V 58A 3-Pin TO-262 Tube - Bulk (Alt: IPI126N10N3 G)
IPI126N10N3GXKSA1

Mfr.#: IPI126N10N3GXKSA1

OMO.#: OMO-IPI126N10N3GXKSA1-1190

 - Bulk (Alt: IPI126N10N3GXKSA1)
IPI126N10N3 G

Mfr.#: IPI126N10N3 G

OMO.#: OMO-IPI126N10N3-G-INFINEON-TECHNOLOGIES

 IGBT Transistors MOSFET N-Ch 100V 58A I2PAK-3 OptiMOS 3
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
5500
Menge eingeben:
Der aktuelle Preis von IPI126N10N3GXKSA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,91 $
0,91 $
10
0,87 $
8,68 $
100
0,82 $
82,20 $
500
0,78 $
388,15 $
1000
0,73 $
730,70 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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