SUD50P10-43L-E3

Mfr. #:: SUD50P10-43L-E3
Hersteller:: Vishay / Siliconix
Beschreibung:: MOSFET 100V 37A 136W 43mohm @ 10V
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: SUD50P10-43L-E3 Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: SUD50P10-43L-E3 Datasheet SUD50P10-43L-E3 Datasheet (P4-P6)SUD50P10-43L-E3 Datasheet (P7-P9)
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Vishay

Produktkategorie:: MOSFET

RoHS:: E

Technologie:: Si

Montageart:: SMD/SMT

Paket / Koffer:: TO-252-3

Anzahl der Kanäle:: 1 Channel

Polarität des Transistors:: P-Kanal

Vds - Drain-Source-Durchbruchspannung:: 100 V

Id - Kontinuierlicher Drainstrom:: 37.1 A

Rds On - Drain-Source-Widerstand:: 43 mOhms

Vgs th - Gate-Source-Schwellenspannung:: 1 V

Vgs - Gate-Source-Spannung:: 10 V

Qg - Gate-Ladung:: 106 nC

Minimale Betriebstemperatur:: - 55 C

Maximale Betriebstemperatur:: + 175 C

Pd - Verlustleistung:: 136 W

Aufbau:: Single

Kanalmodus:: Erweiterung

Handelsname:: TrenchFET

Verpackung:: Spule

Höhe:: 2.38 mm

Länge:: 6.73 mm

Serie:: SUD

Transistortyp:: 1 P-Channel

Breite:: 6.22 mm

Marke:: Vishay / Siliconix

Vorwärtstranskonduktanz - Min:: 38 S

Abfallzeit:: 100 ns

Produktart:: MOSFET

Anstiegszeit:: 20 ns, 160 ns

Werkspackungsmenge:: 2000

Unterkategorie:: MOSFETs

Typische Ausschaltverzögerungszeit:: 100 ns, 110 ns

Typische Einschaltverzögerungszeit:: 15 ns, 42 ns

Gewichtseinheit:: 0.050795 oz

Tags: SUD50P10-43L, SUD50P1, SUD50P, SUD50, SUD5, SUD

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SUD50P10-43L-E3 Beschreibung

***ure Electronics: Single P-Channel 100 V 0.043 Ohm Surface Mount Power MosFet - TO-252-3

***roFlash: Power Field-Effect Transistor, 9.2A I(D), 100V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***nell: MOSFET, P CH, -100V, -38A, TO-252AA; Transistor Polarity:P Channel; Continuous Drain Current Id:-38A; Drain Source Voltage Vds:-100V; On Resistance Rds(on):0.036ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; Power Dissipation Pd:136W; Operating Temperature Min:-50°C; Operating Temperature Max:175°C; Transistor Case Style:TO-252AA; No. of Pins:3; MSL:-

***emi: N-Channel Power MOSFET, UniFETTM II, 500 V, 6.5 A, 850 mΩ, DPAK

***ure Electronics: Single N-Channel 500 V 90 W 18 nC Silicon Surface Mount Mosfet - TO-252-3

***ark: N-Channel UniFETTM II MOSFET 500V, 6.5A, 850m / REEL RoHS Compliant: Yes

***roFlash: Power Field-Effect Transistor, 6.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***rchild Semiconductor: UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

***icroelectronics: N-Channel 400V - 0.85 Ohm - 5.4A Zener-Protected SuperMESH(TM) POWER MOSFET

***ure Electronics: N-Channel 400 V 1 Ohm Surface Mount SuperMESH Power MosFet - TO-252

*** Source Electronics: Trans MOSFET N-CH 400V 5.4A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 400V 5.4A DPAK

***va Crawler: N-channel 400 V, 0.85 Ohm typ., 5.4 A SuperMESH POWER Mosfet in DPAK package

***ark: MOSFET, N CHANNEL, 400V, 5.4A, DPAK; Channel Type:N Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:2.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes

***SIT Distribution GmbH: Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***enic: 400V 5.4A 850m´Î@10V2.7A 70W 3.75V@50uA 18pF@25V N Channel 535pF@25V 19nC@0~10V -55¡Í~+150¡Í@(Tj) TO-252-3(DPAK) MOSFETs ROHS

***emi: N-Channel Power MOSFET, QFET®, 400 V, 4.5 A, 1.0 Ω, DPAK

***r Electronics: Power Field-Effect Transistor, 4.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N CH, 400V, 4.5A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:4.5A; Drain Source Voltage Vds:400V; On Resistance Rds(on):0.83ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:48W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)

***rchild Semiconductor: This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

***ure Electronics: N-Channel 400 V 4.5 A 1 Ohm SMT QFET® Mosfet - D-PAK

***et: Trans MOSFET N-CH 400V 4.5A 3-Pin(2+Tab) DPAK T/R

***ark: TAPE REEL / DXPAK, 400V, NCH, MOSFET

*** Stop Electro: Power Field-Effect Transistors

***ure Electronics: Single P-Channel 400 V 7 Ohm Surface Mount HEXFET Power MOSFET in a D-PAK-3

***icontronic: Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: Mosfet, P-Ch, 400V, 1.8A, To-252; Transistor Polarity:p Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:1.8A; On Resistance Rds(On):7Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No

***ment14 APAC: MOSFET, P, -400V, -1.8A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:1.8A; Drain Source Voltage Vds:400V; On Resistance Rds(on):7ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-1.8A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.5°C/W; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:50W; Power Dissipation Pd:50W; Pulse Current Idm:7.2A; Termination Type:SMD; Voltage Vds Typ:-400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V

***ure Electronics: Single N-Channel 400 V 1.8 Ohms Surface Mount Power Mosfet - TO-252

***SIT Distribution GmbH: Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:400V; Continuous Drain Current Id:3.1A; On Resistance Rds(On):1.8Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: No

***ment14 APAC: MOSFET, N, 400V, 3.1A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:3.1A; Drain Source Voltage Vds:400V; On Resistance Rds(on):1.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:3.1A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; Package / Case:DPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:12A; SMD Marking:IRFR320; Termination Type:SMD; Voltage Vds:400V; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
SUD50P10-43L-E3 DISTI # V72:2272_09215466	Vishay Intertechnologies	Trans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK RoHS: Compliant	1779	1000:$1.2014 500:$1.4957 250:$1.5417 100:$1.7131 25:$2.1862 10:$2.1955 1:$2.9108
SUD50P10-43L-E3 DISTI # V36:1790_09215466	Vishay Intertechnologies	Trans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK RoHS: Compliant	0
SUD50P10-43L-E3 DISTI # SUD50P10-43L-E3CT-ND	Vishay Siliconix	MOSFET P-CH 100V 37.1A TO252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8728In Stock	1000:$1.3486 500:$1.6277 100:$1.9811 10:$2.4650 1:$2.7400
SUD50P10-43L-E3 DISTI # SUD50P10-43L-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 100V 37.1A TO252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8728In Stock	1000:$1.3486 500:$1.6277 100:$1.9811 10:$2.4650 1:$2.7400
SUD50P10-43L-E3 DISTI # SUD50P10-43L-E3TR-ND	Vishay Siliconix	MOSFET P-CH 100V 37.1A TO252 RoHS: Compliant Min Qty: 2000 Container: Tape & Reel (TR)	8000In Stock	6000:$1.1739 2000:$1.2190
SUD50P10-43L-E3 DISTI # 33935277	Vishay Intertechnologies	Trans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK RoHS: Compliant	24000	2000:$0.7594
SUD50P10-43L-E3 DISTI # 33733940	Vishay Intertechnologies	Trans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK RoHS: Compliant	2000	2000:$1.5781
SUD50P10-43L-E3 DISTI # 33600783	Vishay Intertechnologies	Trans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK RoHS: Compliant	1779	6:$2.9108
SUD50P10-43L-E3 DISTI # 31607780	Vishay Intertechnologies	Trans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK RoHS: Compliant	30	8:$3.3250
SUD50P10-43L-E3 DISTI # SUD50P10-43L-E3	Vishay Intertechnologies	Trans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SUD50P10-43L-E3) RoHS: Compliant Min Qty: 2000 Container: Reel	Americas - 8000	8000:$1.0900 12000:$1.0900 20000:$1.0900 2000:$1.1900 4000:$1.1900
SUD50P10-43L-E3 DISTI # SUD50P10-43L-E3	Vishay Intertechnologies	Trans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK (Alt: SUD50P10-43L-E3) RoHS: Compliant Min Qty: 2000	Europe - 0	20000:€0.7439 12000:€0.7779 8000:€0.8799 4000:€1.0849 2000:€1.5119
SUD50P10-43L-E3 DISTI # 79K3483	Vishay Intertechnologies	MOSFET, P CHANNEL, -100V, -38A, TO-252-3,Transistor Polarity:P Channel,Continuous Drain Current Id:-38A,Drain Source Voltage Vds:-100V,On Resistance Rds(on):0.036ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V RoHS Compliant: Yes	1929	500:$1.5300 250:$1.6300 100:$1.7400 50:$1.9100 25:$2.0700 10:$2.2400 1:$2.7100
SUD50P10-43L-E3. DISTI # 30AC0990	Vishay Intertechnologies	Transistor Polarity:P Channel,Continuous Drain Current Id:-38A,Drain Source Voltage Vds:-100V,On Resistance Rds(on):0.036ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-3V,Power Dissipation Pd:136W,No. of Pins:3Pins RoHS Compliant: Yes	8000	8000:$1.0900 1:$1.1900
SUD50P10-43L-E3	Vishay Intertechnologies	Single P-Channel 100 V 0.043 Ohm Surface Mount Power MosFet - TO-252-3 RoHS: Compliant	4000Reel	2000:$1.1200
SUD50P10-43L-E3 DISTI # 781-SUD50P10-43L-E3	Vishay Intertechnologies	MOSFET 100V 37A 136W 43mohm @ 10V RoHS: Compliant	8937	1:$2.6700 10:$2.2100 100:$1.7200 500:$1.5000 1000:$1.2400 2000:$1.1600 4000:$1.1200
SUD50P10-43L-E3 DISTI # TMOS2525	Vishay Intertechnologies	P-CH 100V 37A 43mOhm TO252 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	2000:$1.8500 4000:$1.4300
SUD50P10-43L-E3 DISTI # XSFP00000078304	Vishay Siliconix	Single P-Channel 100 V 0.043 Ohm Surface MountPowerMosFet - TO-252-3 RoHS: Compliant	4000 in Stock0 on Order	4000:$1.4900 2000:$1.6000
SUD50P10-43L-E3.	Vishay Intertechnologies	MOSFET 100V 37A 136W 43mohm @ 10V	Americas - 1780	10:$1.9980 100:$1.5480 250:$1.4540 500:$1.3590 1000:$1.3090
SUD50P10-43L-E3	Vishay Intertechnologies	MOSFET 100V 37A 136W 43mohm @ 10V	Americas - 10000	2000:$1.1900 4000:$1.1600 10000:$1.0900
SUD50P10-43L-E3 DISTI # 2335409	Vishay Intertechnologies	MOSFET, P CH, -100V, -38A, TO-252AA	9022	500:£1.1900 250:£1.2700 100:£1.3500 10:£1.7500 1:£2.3900
SUD50P10-43L-E3 DISTI # 2335409	Vishay Intertechnologies	MOSFET, P CH, -100V, -38A, TO-252AA RoHS: Compliant	4554	2000:$1.8500 1000:$1.8800 500:$2.2800 100:$2.5900 10:$3.3500 1:$4.0400
SUD50P10-43L-E3 DISTI # C1S803601351513	Vishay Intertechnologies	Trans MOSFET P-CH 100V 9.2A 3-Pin(2+Tab) DPAK RoHS: Compliant	30	10:$2.1400 1:$2.6600

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1991
Menge eingeben:

Der aktuelle Preis von SUD50P10-43L-E3 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~2,67 $~~; ~~2,67 $~~

10: ~~2,21 $~~; ~~22,10 $~~

100: ~~1,72 $~~; ~~172,00 $~~

500: ~~1,50 $~~; ~~750,00 $~~

1000: ~~1,24 $~~; ~~1 240,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

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SUD50P10-43L-E3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes