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IPB17N25S3-100

IPB17N25S3-100
Mfr. #:
IPB17N25S3-100
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET N-Ch 250V 17A D2PAK-2
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IPB17N25S3-100 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
IPB17N25S3-100 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PG-TO-263-3
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
250 V
Id - Kontinuierlicher Drainstrom:
17 A
Rds On - Drain-Source-Widerstand:
100 mOhms
Vgs th - Gate-Source-Schwellenspannung:
2 V
Vgs - Gate-Source-Spannung:
10 V
Qg - Gate-Ladung:
14 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 175 C
Pd - Verlustleistung:
107 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Qualifikation:
AEC-Q101
Verpackung:
Spule
Höhe:
4.4 mm
Länge:
10 mm
Serie:
IPB17N25
Transistortyp:
1 N-Channel
Breite:
9.25 mm
Marke:
Infineon-Technologien
Abfallzeit:
1.2 ns
Produktart:
MOSFET
Anstiegszeit:
3.7 ns
Werkspackungsmenge:
1000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
7.5 ns
Typische Einschaltverzögerungszeit:
4.4 ns
Teil # Aliase:
IPB17N25S3100ATMA1 IPB17N25S31XT SP000876560
Gewichtseinheit:
0.139332 oz
Tags
IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
N-Channel OptiMOS™ Power MOSFETs - EXPANSION
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make Infineon N-Channel OptiMOS™ Power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power Transistors provide excellent gate charge and are optimized for dc-dc conversion.OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in optimizing space, efficiency and cost. OptiMOS™ products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.Learn More
Teil # Mfg. Beschreibung Aktie Preis
IPB17N25S3100ATMA1
DISTI # V72:2272_06384046		Infineon Technologies AGTrans MOSFET N-CH 250V 17A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		357
  • 250:$1.0504
  • 100:$1.1389
  • 25:$1.2286
  • 10:$1.4536
  • 1:$1.6836
IPB17N25S3100ATMA1
DISTI # V36:1790_06384046		Infineon Technologies AGTrans MOSFET N-CH 250V 17A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		0
  • 1000000:$0.6937
  • 500000:$0.6941
  • 100000:$0.7441
  • 10000:$0.8427
  • 1000:$0.8597
IPB17N25S3100ATMA1
DISTI # IPB17N25S3100ATMA1-ND		Infineon Technologies AGMOSFET N-CH TO263-3
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$0.8597
IPB17N25S3100ATMA1
DISTI # 32445145		Infineon Technologies AGTrans MOSFET N-CH 250V 17A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant		357
  • 250:$1.0504
  • 100:$1.1389
  • 25:$1.2286
  • 10:$1.4536
IPB17N25S3100ATMA1
DISTI # IPB17N25S3100ATMA1		Infineon Technologies AGTrans MOSFET N-CH 250V 17A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB17N25S3100ATMA1)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$0.7534
  • 6000:$0.7670
  • 4000:$0.7937
  • 2000:$0.8235
  • 1000:$0.8543
IPB17N25S3100ATMA1
DISTI # 49AC0282		Infineon Technologies AGMOSFET, N-CH, AEC-Q100, 250V, 17A, TO263,Transistor Polarity:N Channel,Continuous Drain Current Id:17A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.085ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes
RoHS: Compliant		0
  • 500:$1.0300
  • 250:$1.1100
  • 100:$1.1800
  • 50:$1.2800
  • 25:$1.3800
  • 10:$1.4800
  • 1:$1.7400
IPB17N25S3-100
DISTI # 726-IPB17N25S3-100		Infineon Technologies AGMOSFET N-Ch 250V 17A D2PAK-2
RoHS: Compliant		1867
  • 1:$1.7400
  • 10:$1.4800
  • 100:$1.1800
  • 500:$1.0300
  • 1000:$0.8590
  • 2000:$0.8000
  • 5000:$0.7700
  • 10000:$0.7410
IPB17N25S3100ATMA1
DISTI # 726-IPB17N25S3100ATM		Infineon Technologies AGMOSFET N-Ch 250V 17A D2PAK-2
RoHS: Compliant		1000
  • 1:$1.7400
  • 10:$1.4800
  • 100:$1.1800
  • 500:$1.0300
  • 1000:$0.8590
  • 2000:$0.8000
  • 5000:$0.7700
  • 10000:$0.7410
IPB17N25S3100ATMA1
DISTI # 8269002		Infineon Technologies AGIn a Pack of 20, IPB17N25S3100ATMA1 N-Channel MOSFET, 17 A, 250 V OptiMOS T, 3-Pin D2PAK Infineon, PK
Min Qty: 20
Container: Package		600
  • 20:$1.3490
  • 100:$1.0420
IPB17N25S3100ATMA1
DISTI # 1655608		Infineon Technologies AGOn a Reel of 1000, IPB17N25S3100ATMA1 N-Channel MOSFET, 17 A, 250 V OptiMOS T, 3-Pin D2PAK Infineon, RL
Min Qty: 1000
Container: Reel		0
  • 1000:$0.8410
IPB17N25S3100ATMA1
DISTI # 2839450RL		Infineon Technologies AGMOSFET, N-CH, AEC-Q100, 250V, 17A, TO263
RoHS: Compliant		0
  • 5000:£0.6360
  • 1000:£0.6600
  • 500:£0.8490
  • 250:£0.9110
  • 100:£0.9730
  • 10:£1.2600
  • 1:£1.6400
IPB17N25S3100ATMA1
DISTI # 2839450		Infineon Technologies AGMOSFET, N-CH, AEC-Q100, 250V, 17A, TO263
RoHS: Compliant		320
  • 5000:£0.6360
  • 1000:£0.6600
  • 500:£0.8490
  • 250:£0.9110
  • 100:£0.9730
  • 10:£1.2600
  • 1:£1.6400
IPB17N25S3100ATMA1
DISTI # 2839450		Infineon Technologies AGMOSFET, N-CH, AEC-Q100, 250V, 17A, TO263
RoHS: Compliant		0
  • 2000:$1.2100
  • 1000:$1.2900
  • 500:$1.5500
  • 100:$1.7800
  • 5:$2.2300
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Verfügbarkeit
Aktie:
Available
Auf Bestellung:
1984
Menge eingeben:
Der aktuelle Preis von IPB17N25S3-100 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
1,74 $
1,74 $
10
1,48 $
14,80 $
100
1,18 $
118,00 $
500
1,03 $
515,00 $
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