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IRFH5306TRPBF

IRFH5306TRPBF
Mfr. #:
IRFH5306TRPBF
Hersteller:
Infineon / IR
Beschreibung:
MOSFET 30V 1 N-CH HEXFET 8.1mOhms 7.8nC
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
IRFH5306TRPBF Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFH5306TRPBF DatasheetIRFH5306TRPBF Datasheet (P4-P6)IRFH5306TRPBF Datasheet (P7-P9)
ECAD Model:
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
PQFN-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
30 V
Id - Kontinuierlicher Drainstrom:
44 A
Rds On - Drain-Source-Widerstand:
8.1 mOhms
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
7.8 nC
Pd - Verlustleistung:
26 W
Aufbau:
Single
Verpackung:
Spule
Höhe:
0.83 mm
Länge:
6 mm
Transistortyp:
1 N-Channel
Breite:
5 mm
Marke:
Infineon / IR
Produktart:
MOSFET
Werkspackungsmenge:
4000
Unterkategorie:
MOSFETs
Teil # Aliase:
SP001556452
Tags
IRFH5306, IRFH53, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package
***ied Electronics & Automation
MOSFET; N-Channel; 30V; 44A; 8.1 mOhm max; 7.8 nC Qg; PQFN 5x6
***et
Trans MOSFET N-CH 30V 15A 8-Pin PQFN T/R
***ark
N CHANNEL MOSFET, 30V, 44A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current, Id:15A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0081ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDSon (less than 1.15 mO); Low Thermal Resistance to PCB (less than 0.8C/W); 100% Rg tested; Low Profile (less than 0.9 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET
Teil # Mfg. Beschreibung Aktie Preis
IRFH5306TRPBF
DISTI # IRFH5306TRPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 15A 5X6 PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		Limited Supply - Call
    IRFH5306TRPBF
    DISTI # 70019241    		Infineon Technologies AGMOSFET,N-Channel,30V,44A,8.1 mOhm max,7.8 nC Qg,PQFN 5x6
    RoHS: Compliant    		0
    • 4000:$1.1800
    • 8000:$1.1560
    • 20000:$1.1210
    • 40000:$1.0740
    • 100000:$1.0030
    IRFH5306TRPBFInternational RectifierPower Field-Effect Transistor, 15A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET
    RoHS: Compliant    		2000
    • 1000:$0.3800
    • 500:$0.4000
    • 100:$0.4200
    • 25:$0.4400
    • 1:$0.4700
    IRFH5306TRPBF
    DISTI # 942-IRFH5306TRPBF    		Infineon Technologies AGMOSFET 30V 1 N-CH HEXFET 8.1mOhms 7.8nC
    RoHS: Compliant    		0
      Bild Teil # Beschreibung
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      Verfügbarkeit
      Aktie:
      Available
      Auf Bestellung:
      4000
      Menge eingeben:
      Der aktuelle Preis von IRFH5306TRPBF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
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