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| Teil # | Mfg. | Beschreibung | Aktie | Preis |
|---|---|---|---|---|
| 2SK3659-AZ DISTI # 2SK3659-AZ | Renesas Electronics Corporation | - Bulk (Alt: 2SK3659-AZ) Min Qty: 239 Container: Bulk | Americas - 0 |
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| 2SK3659-AZ | Renesas Electronics Corporation | Power Field-Effect Transistor, 65A I(D), 20V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant | 1772 |
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| Bild | Teil # | Beschreibung |
|---|---|---|
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Mfr.#: 2SK3529-01 OMO.#: OMO-2SK3529-01-1190 |
MOSFET, Power, N-Ch, VDSS 800V, RDS(ON) 1.46 Ohms, ID +/-7A, TO-220AB, PD 195W, VGS +/- |
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Mfr.#: 2SK3520-01MR-P OMO.#: OMO-2SK3520-01MR-P-1190 |
Power Field-Effect Transistor, 9AI(D),500V,0.85ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductor FET,TO-220AB |
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Mfr.#: 2SK3510-AZ OMO.#: OMO-2SK3510-AZ-1190 |
Power Field-Effect Transistor, 83A I(D), 75V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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Mfr.#: 2SK1582 / G15 OMO.#: OMO-2SK1582-G15-1190 |
Neu und Original |
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Mfr.#: 2SK1824-T1-A/JM OMO.#: OMO-2SK1824-T1-A-JM-1190 |
Neu und Original |
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Mfr.#: 2SK2129 OMO.#: OMO-2SK2129-1190 |
Neu und Original |
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Mfr.#: 2SK241-GR.Y(F) OMO.#: OMO-2SK241-GR-Y-F--1190 |
Neu und Original |
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Mfr.#: 2SK3607-01MR OMO.#: OMO-2SK3607-01MR-1190 |
Power Field-Effect Transistor, 13A I(D), 200V,0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxideSemiconductor FET, TO-220AB |
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Mfr.#: 2SK4057-ZK OMO.#: OMO-2SK4057-ZK-1190 |
Neu und Original |
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Mfr.#: 2SK427T-SPA-A OMO.#: OMO-2SK427T-SPA-A-1190 |
Neu und Original |