2SC5084YTE85LF

Mfr. #:: 2SC5084YTE85LF
Hersteller:: Toshiba
Beschreibung:: Bipolar Transistors - BJT Radio-Freq Bipolar 80mA 150mW 12V
Lebenszyklus:: Neu von diesem Hersteller.
Datenblatt:: 2SC5084YTE85LF Datenblatt
Die Zustellung:: DHL FedEx Ups TNT EMS
Zahlung:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Produkteigenschaft
Attributwert

Hersteller:: Toshiba

Produktkategorie:: Bipolartransistoren - BJT

RoHS:: Y

Montageart:: SMD/SMT

Paket / Koffer:: SOT-346-3

Polarität des Transistors:: NPN

Aufbau:: Single

Kollektor- Emitterspannung VCEO Max:: 12 V

Kollektor- Basisspannung VCBO:: 20 V

Emitter- Basisspannung VEBO:: 3 V

Maximaler DC-Kollektorstrom:: 80 mA

Bandbreitenprodukt fT gewinnen:: 7 GHz

Serie:: 2SC5084

DC-Stromverstärkung hFE Max:: 240

Verpackung:: Spule

Marke:: Toshiba

Kontinuierlicher Kollektorstrom:: 80 mA

DC-Kollektor/Basisverstärkung hfe Min:: 80

Pd - Verlustleistung:: 150 mW

Produktart:: BJTs - Bipolartransistoren

Werkspackungsmenge:: 3000

Unterkategorie:: Transistoren

Gewichtseinheit:: 0.000423 oz

Tags: 2SC5084Y, 2SC5084, 2SC508, 2SC50, 2SC5, 2SC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SC5084YTE85LF Beschreibung

***enic: 1Ã×A 12V 150mW 80mA 120@20mA10V 7GHz NPN +125¡Í@(Tj) SC-59 Bipolar Transistors - BJT ROHS

***ical: Trans RF BJT NPN 12V 0.08A 3-Pin S-Mini T/R

***i-Key: RF TRANS NPN 12V 7GHZ SC59

***el Electronic: Bipolar Transistors - BJT Radio-Freq Bipolar 80mA 150mW 12V

***ical: Trans RF BJT NPN 12V 0.08A 3-Pin S-Mini T/R

*** Americas: 2SC5084 1 2003-03-19 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC5084 VHF^UHF Band Low Noise Amplifier Applications Low noise figure, high gain. NF = 1.1dB, |S21e|2 = 11dB (f = 1 GHz) Maximum Ratings (Ta 25 C) Characteristics Symbol Rating Uni

*** Source Electronics: TRANS PREBIAS NPN 200MW SOT23-3 / Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-23 T/R

***ure Electronics: DDTC143ZCA Series 50 V 100 mA NPN Pre-Biased Small Signal Transistor - SOT-23-3

***ment14 APAC: RF Transistor, NPN, 50V, 0.1A, SOT-23;

***ark: Digital Transistor Polarity:single Npn; Collector Emitter Voltage V(Br)Ceo:50V; Continuous Collector Current Ic:100Ma; Base Input Resistor R1:4.7Kohm; Base-Emitter Resistor R2:47Kohm; Resistor Ratio, R1 / R2:0.1(Ratio); Msl:- Rohs Compliant: Yes

*** Source Electronics: Trans Digital BJT NPN 50V 100mA 200mW 3-Pin SOT-23 T/R / TRANS PREBIAS NPN 200MW SOT23-3

***ure Electronics: DDTC Series 200 mW 50 V SMT NPN Pre-Biased Small Signal Transistor - SOT-23-3

***ark: Rf Transistor, Npn, 50V, 0.1A, Sot-23 Rohs Compliant: Yes

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

***ponent Stockers USA: 100 mA 50 V NPN Si SMALL SIGNAL TRANSISTOR TO-236AB

***i-Key: TRANS PREBIAS NPN 246MW SOT23-3

***r Electronics: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

***nell: TRANSISTOR, DIGITAL SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 50V; Transition Frequency ft: -; Power Dissipation Pd: 400mW; DC Collector Current: 100mA; DC Current Gain hFE: 80hFE; Transistor Case S

***ark: Small Signal Pre-Biased Transistor; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:50V; Continuous Collector Current Max.:100mA; Base Input Resistor, R1:47000ohm; Base-Emitter Resistor, R2:47000ohm RoHS Compliant: No

***ment14 APAC: TRANSISTOR, DIGITAL SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Power Dissipation Pd:400mW; DC Collector Current:100mA; DC Current Gain hFE:80; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Continuous Collector Current Ic Max:100mA; Current Ic Continuous a Max:100mA; Current Ic hFE:5mA; Hfe Min:80; No. of Transistors:1; Package / Case:SOT-23; Pin Configuration:1; Power Dissipation Ptot Max:200mW; Resistance R1:47kohm; Resistance R2:47kohm; SMD Marking:A8C; Termination Type:SMD; Transistor Type:Bias Resistor (BRT); Voltage Vcbo:50V

*** Stop Electro: Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

***Yang: Trans Digital BJT NPN 50V 100mA 3-Pin SOT-23 T/R - Tape and Reel

***emi: NPN Epitaxial Silicon Transistor with Bias Resistor

***ment14 APAC: TRANSISTOR, RF, NPN, 50V, 0.1A, SOT-23

***rchild Semiconductor: Transistors with built-in resistors can be excellent space- and cost-saving solutions by reducing component count and simplifying circuit design.

***nell: TRANSISTOR, RF, NPN, 50V, 0.1A, SOT-23; Digital Transistor Polarity: Single NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 2.2kohm; Base-Emitter Resistor R2: 47ko

Market price

Teil #	Mfg.	Beschreibung	Aktie	Preis
2SC5084-Y(TE85L,F) DISTI # C1S751201086840	Toshiba America Electronic Components	GP BJT RoHS: Compliant	4200	2000:$0.5540 1000:$0.5680 500:$0.6780 100:$0.7100 50:$0.7450
2SC5084YTE85LF DISTI # 2SC5084YTE85LFCT-ND	Toshiba America Electronic Components	RF TRANS NPN 12V 7GHZ SC59 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	1236In Stock	1000:$0.1324 500:$0.1765 250:$0.2133 100:$0.2574 25:$0.3164 10:$0.3750 1:$0.4800
2SC5084YTE85LF DISTI # 2SC5084YTE85LFDKR-ND	Toshiba America Electronic Components	RF TRANS NPN 12V 7GHZ SC59 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
2SC5084-Y(TE85L,F DISTI # 2SC5084-Y(TE85L,F	Toshiba America Electronic Components	TOS2SC5084-Y(TE85L,F RADIO-FREQUENCY BIP (Alt: 2SC5084-Y(TE85L,F) RoHS: Compliant Min Qty: 3000	Asia - 3000	3000:$0.9309 6000:$0.8393 9000:$0.7642 15000:$0.7014 30000:$0.6737 75000:$0.6564 150000:$0.6400
2SC5084YTE85LF DISTI # 757-2SC5084YTE85LF	Toshiba America Electronic Components	Bipolar Transistors - BJT Radio-Freq Bipolar 80mA 150mW 12V RoHS: Compliant	3000	1:$0.4600 10:$0.3020 100:$0.1680 1000:$0.1230 3000:$0.1060 9000:$0.0990 24000:$0.0910 45000:$0.0880

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Verfügbarkeit

Aktie:: Available
Auf Bestellung:: 1985
Menge eingeben:

Der aktuelle Preis von 2SC5084YTE85LF dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]

Referenzpreis (USD)

Menge
Stückpreis
ext. Preis

1: ~~0,46 $~~; ~~0,46 $~~

10: ~~0,30 $~~; ~~3,02 $~~

100: ~~0,17 $~~; ~~16,80 $~~

1000: ~~0,12 $~~; ~~123,00 $~~

Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.

Beginnen mit

2SC5084Y 3
2SC5084 16
2SC508 71
2SC50 241
2SC5 1341
2SC 6344

2SC5084YTE85LF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes