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BSC0996NSATMA1

BSC0996NSATMA1
Mfr. #:
BSC0996NSATMA1
Hersteller:
Infineon Technologies
Beschreibung:
MOSFET TRANSITIONAL MOSFETS
Lebenszyklus:
Neu von diesem Hersteller.
Datenblatt:
BSC0996NSATMA1 Datenblatt
Die Zustellung:
DHL FedEx Ups TNT EMS
Zahlung:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Mehr Informationen:
BSC0996NSATMA1 Mehr Informationen
Produkteigenschaft
Attributwert
Hersteller:
Infineon
Produktkategorie:
MOSFET
RoHS:
Y
Technologie:
Si
Montageart:
SMD/SMT
Paket / Koffer:
TDSON-8
Anzahl der Kanäle:
1 Channel
Polarität des Transistors:
N-Kanal
Vds - Drain-Source-Durchbruchspannung:
34 V
Id - Kontinuierlicher Drainstrom:
13 A
Rds On - Drain-Source-Widerstand:
9 mOhms
Vgs th - Gate-Source-Schwellenspannung:
1.2 V
Vgs - Gate-Source-Spannung:
20 V
Qg - Gate-Ladung:
20 nC
Minimale Betriebstemperatur:
- 55 C
Maximale Betriebstemperatur:
+ 150 C
Pd - Verlustleistung:
2.5 W
Aufbau:
Single
Kanalmodus:
Erweiterung
Handelsname:
OptiMOS
Verpackung:
Spule
Transistortyp:
1 N-Channel
Marke:
Infineon-Technologien
Vorwärtstranskonduktanz - Min:
13 S
Abfallzeit:
5.4 ns
Produktart:
MOSFET
Anstiegszeit:
4.4 ns
Werkspackungsmenge:
5000
Unterkategorie:
MOSFETs
Typische Ausschaltverzögerungszeit:
8.9 ns
Typische Einschaltverzögerungszeit:
9.7 ns
Teil # Aliase:
BSC0996NS SP001659236
Tags
BSC09, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Trans MOSFET N-CH 34V 8.5A 8-Pin TDSON T/R - Tape and Reel
***ineon SCT
With the OptiMOS™ 5 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation, PG-TDSON-8, RoHS
***ineon
With the OptiMOS 5 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation. | Summary of Features: Best-in-class on-state resistance; Benchmark switching performance (lowest figure of merits R on x Q g and R on x Q gd); RoHS compliant and halogen free; Optimized EMI behavior (integrated damping network) | Benefits: Highest efficiency; Reduction of overall system costs; Operation at high-switching frequency | Target Applications: Wirless charging; Desktop and server; Single-phase and multiphase POL; CPU/GPU VR in notebooks; High power density voltage regulator; Or-ing; E-fuse
Wireless Charging Solutions
Infineon Wireless Charging Solutions meet today's growing demand for wireless charge applications like smartphones, wearables, notebooks, and low-voltage drive devices. Infineon's highly efficient and cost-effective devices enable state-of-the-art solutions for the transmitter unit for inductive and resonant standards. Infineon devices are ready-to-use for the adapter/charger, fostering time-to-market of full wireless charging solutions. Infineon is a member of the Wireless Power Consortium and the AirFuel Alliance.
Inductive Wireless Charging Solutions
Infineon Technologies Inductive Wireless Charging Solutions use electromagnetic fields to transfer power from a transmitter to a receiver application. This technology charges batteries without a physical connection, all thanks to a wireless charging power supply. The benefits for wireless charging in applications are not having to plug in a device and no plug compatibility issues. It’s also safer since there is no contact with exposed electrical connectors. Wireless charging is more reliable in harsher environments, like drilling and mining. It also allows for seamless on-the-go charging whether in the car or in public places. Finally, it eliminates tangled charging cables while charging multiple devices in parallel.
Teil # Mfg. Beschreibung Aktie Preis
BSC0996NSATMA1
DISTI # BSC0996NSATMA1-ND		Infineon Technologies AGMOSFET N-CHANNEL 34V 13A 8TDSON
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 5000:$0.2397
BSC0996NSATMA1
DISTI # BSC0996NSATMA1		Infineon Technologies AGTrans MOSFET N-CH 34V 8.5A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC0996NSATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 50000:$0.2139
  • 30000:$0.2179
  • 20000:$0.2259
  • 10000:$0.2339
  • 5000:$0.2429
BSC0996NSATMA1
DISTI # SP001659236		Infineon Technologies AGTrans MOSFET N-CH 34V 8.5A 8-Pin TDSON T/R (Alt: SP001659236)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Europe - 0
  • 50000:€0.2289
  • 30000:€0.2459
  • 20000:€0.2739
  • 10000:€0.3079
  • 5000:€0.3629
BSC0996NSATMA1
DISTI # 726-BSC0996NSATMA1		Infineon Technologies AGMOSFET TRANSITIONAL MOSFETS
RoHS: Compliant		0
  • 1:$0.6300
  • 10:$0.5250
  • 100:$0.3390
  • 1000:$0.2710
Bild Teil # Beschreibung
BSC0996NSATMA1

Mfr.#: BSC0996NSATMA1

OMO.#: OMO-BSC0996NSATMA1

 MOSFET TRANSITIONAL MOSFETS
BSC0996NSATMA1

Mfr.#: BSC0996NSATMA1

OMO.#: OMO-BSC0996NSATMA1-INFINEON-TECHNOLOGIES

 MOSFET N-CHANNEL 34V 13A 8TDSON
Verfügbarkeit
Aktie:
Available
Auf Bestellung:
4000
Menge eingeben:
Der aktuelle Preis von BSC0996NSATMA1 dient nur als Referenz. Wenn Sie den besten Preis erhalten möchten, senden Sie bitte eine Anfrage oder senden Sie eine direkte E-Mail an unser Verkaufsteam [email protected]
Referenzpreis (USD)
Menge
Stückpreis
ext. Preis
1
0,63 $
0,63 $
10
0,52 $
5,25 $
100
0,34 $
33,90 $
1000
0,27 $
271,00 $
Aufgrund von Halbleiterknappheit ab 2021 ist der untere Preis der Normalpreis vor 2021. Bitte senden Sie eine Anfrage zur Bestätigung.
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